US5279980A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a thin-film semiconductor device having an alpha-tantalum first wiring member
Assignee: Fujifilm Business Innovation Corp
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Filing: 1992-06-05
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Granted: 1994-01-18
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Expires: 2012-06-05
Abstract
Abstract In a reverse staggered MOS transistor, a gate electrode and a signal wiring connected to the gate electrode consist of a wiring base on the substrate side and an overlying wiring part superposed on the wiring base. The wiring base is composed of a conductive material, e.g., tantalum-molybdenum alloy, which has a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of α-tantalum. Being continuously deposited on the wiring base by sputtering, the overlying wiring part also assumes the α-tantalum form inheriting the lattice structure of the wiring base. In the case of a staggered MOS transistor, source and drain electrodes and respective signal wirings connected to the source and drain electrodes take the similar structure.
Inventors
- 👤 Takehito Hikichi
- 👤 Shigeru Yamamoto
- 👤 Ichiro Asai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
153 words
A manufacturing method of a thin-film semiconductor device having an insulating substrate, a semiconductor layer formed on the insulating substrate, and a first wiring member formed on the insulating substrate with at least part of the first wiring member being in surface contact with the insulating substrate, comprising the steps of: forming, on the insulating substrate by sputtering, a base layer composed of a conductive material having a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of α-tantalum; forming continuously, on the base layer by sputtering, an overlying layer composed of α-tantalum as a result of its growth inheriting the lattice structure of the conductive material; and removing selectively, by dry etching, part of the base layer and the overlying layer to form the first wiring member including a wiring base on the substrate side and an overlying wiring part superposed on the wiring base.
Claim 2
Dependent Claim
153 words
A manufacturing method of a thin-film semiconductor device having an insulating substrate, a semiconductor layer formed on the insulating substrate, and a first wiring member formed on the insulating substrate with at least part of the first wiring member being in surface contact with the insulating substrate, comprising the steps of: forming, on the insulating substrate by sputtering, a base layer composed of a conductive material having a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of α-tantalum; forming continuously, on the base layer by sputtering, an overlying layer composed of α-tantalum as a result of its growth inheriting the lattice structure of the conductive material; and removing selectively, by dry etching, part of the base layer and the overlying layer to form the first wiring member including a wiring base on the substrate side and an overlying wiring part superposed on the wiring base.
Claim 3
Dependent Claim
13 words
The method according to claim 1, wherein the conductive material is tantalum-molybdenum alloy.
Claim 4
Dependent Claim
275 words
A manufacturing method of a thin-film semiconductor device having a plurality of thin-film semiconductor elements and an active matrix wiring circuit provided on a common insulating substrate, in which both a first signal wiring of the active matrix wiring circuit and an electrode on the substrate side of each of the plurality of thin-film semiconductor elements are in surface contact with the insulating substrate, comprising the steps of: forming, on the insulating substrate by sputtering, a base layer composed of a conductive material having a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of α-tantalum; forming continuously, on the base layer by sputtering, an intermediate layer composed of α-tantalum as a result of its growth inheriting the lattice structure of the conductive material; and removing selectively, by dry etching, part of the base layer and the intermediate layer to form a wiring base on the substrate side and an intermediate overlying wiring part superposed on the wiring base; forming, on the insulating substrate and the intermediate overlying wiring part by sputtering, a top layer composed of tantalum on the insulating substrate, and composed of α-tantalum on the intermediate overlying wiring part as a result of its growth inheriting a lattice structure of α-tantalum of the intermediate overlying wiring part; and removing selectively, by dry etching, part of the top layer to form the electrode on the substrate side of each of the plurality of thin-film semiconductor elements and a top overlying wiring part of the first signal wiring of the active matrix wiring circuit, the electrode and the top overlying wiring part being integral with each other.
Claim 5
Dependent Claim
275 words
A manufacturing method of a thin-film semiconductor device having a plurality of thin-film semiconductor elements and an active matrix wiring circuit provided on a common insulating substrate, in which both a first signal wiring of the active matrix wiring circuit and an electrode on the substrate side of each of the plurality of thin-film semiconductor elements are in surface contact with the insulating substrate, comprising the steps of: forming, on the insulating substrate by sputtering, a base layer composed of a conductive material having a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of α-tantalum; forming continuously, on the base layer by sputtering, an intermediate layer composed of α-tantalum as a result of its growth inheriting the lattice structure of the conductive material; and removing selectively, by dry etching, part of the base layer and the intermediate layer to form a wiring base on the substrate side and an intermediate overlying wiring part superposed on the wiring base; forming, on the insulating substrate and the intermediate overlying wiring part by sputtering, a top layer composed of tantalum on the insulating substrate, and composed of α-tantalum on the intermediate overlying wiring part as a result of its growth inheriting a lattice structure of α-tantalum of the intermediate overlying wiring part; and removing selectively, by dry etching, part of the top layer to form the electrode on the substrate side of each of the plurality of thin-film semiconductor elements and a top overlying wiring part of the first signal wiring of the active matrix wiring circuit, the electrode and the top overlying wiring part being integral with each other.
Claim 6
Dependent Claim
13 words
The method according to claim 3, wherein the conductive material is tantalum-molybdenum alloy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-17 | 1997-07-19 | 1998-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-17 | 2001-07-19 | 2002-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-17 | 2005-07-19 | 2006-01-18 | $7700.00 | Window Closed / Lapsed |