US5286338A
Expired / Lapsed
US
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Methods for making microlens arrays
Assignee: Seoul Semiconductor Co Ltd
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Filing: 1993-03-01
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Granted: 1994-02-15
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Expires: 2013-03-01
Abstract
Abstract During a reactive ion etching process (FIG. 5) for making lens elements (15, FIG. 4) in a silica substrate (12), the gas constituency in the reactive ion etch chamber is changed to adjust the curvature of lens elements formed in the silica substrate and to reduce the aberrations of such lens elements. For example, two gases, CHF 3 and oxygen may be supplied to the reactive ion etch chamber and, during the reactive ion etch process, the proportion of oxygen is significantly reduced, which reduces the aberrations of the lens elements formed by the process.
Inventors
- 👤 Avi Y. Feldblum
- 👤 Keith O. Mersereau
- 👤 Casimir R. Nijander
- 👤 Wesley P. Townsend
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:12
CPC Classifications
C; C03; C03C; C03C15/00; G; G01; G01M; G01M11/00; G01M11/02; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/124; G02B6/1245; G02B2006/12166; G02B2006/12176
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
130 words
A method of forming a lens array comprising the steps of: forming a plurality of first elements of a first material overlying a substrate of a second material; at least partially melting the first elements to cause them to have curved upper surfaces and thereafter solidifying the first elements; locating the substrate and the first elements in a reactive ion etch chamber having gas input apparatus; reactive ion etching the substrate and said plurality of first elements such that differential etching of the substrate produces lens elements in the substrate; wherein the improvement comprises: during the reactive ion etch step, deliberately changing the gas constituency in the reactive ion etch chamber to adjust the curvature of lens elements formed in the substrate and to reduce aberrations of such lens elements.
Claim 2
Independent Claim
130 words
A method of forming a lens array comprising the steps of: forming a plurality of first elements of a first material overlying a substrate of a second material; at least partially melting the first elements to cause them to have curved upper surfaces and thereafter solidifying the first elements; locating the substrate and the first elements in a reactive ion etch chamber having gas input apparatus; reactive ion etching the substrate and said plurality of first elements such that differential etching of the substrate produces lens elements in the substrate; wherein the improvement comprises: during the reactive ion etch step, deliberately changing the gas constituency in the reactive ion etch chamber to adjust the curvature of lens elements formed in the substrate and to reduce aberrations of such lens elements.
Claim 3
Dependent Claim
38 words
The method of claim 1 wherein: at least two different gases are supplied through the gas input apparatus; and the step of changing the gas constituency comprises the step of changing the ratio of said two different gases.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein: the second material is silica, and the first material is a photoresist material.
Claim 5
Dependent Claim
14 words
The method of claim 2 wherein: the two gases are CHF 3 and oxygen.
Claim 6
Dependent Claim
25 words
The method of claim 4 wherein: during the reactive ion etch step, the proportion of oxygen supplied is reduced by more than about fifteen percent.
Claim 7
Dependent Claim
65 words
The method of claim 4 wherein: at the beginning of the reactive ion etch step, the proportion of oxygen supplied is in the range of 3.8 percent to 5.3 percent, and at the end of the reactive ion etch step, the proportion of oxygen is in the range of 3.1 percent to 3.6 percent, and the remainder of the gas supplied is CHF 3 .
Claim 8
Dependent Claim
28 words
The method of claim 1 wherein: during the reactive ion etch step, the substrate and elements are subjected to radio frequency power which enhances said reactive ion etch.
Claim 9
Dependent Claim
50 words
The method of claim 1 further comprising the steps of: after the reactive ion etch step, locating the substrate in interferometer apparatus; directing a first light beam through one of said lens elements and thereafter causing the first light beam to interfere with a reference beam to form interference fringes.
Claim 10
Dependent Claim
72 words
The method of claim 8 further comprising the steps of: using the reactive ion etch step to form a plurality of different lens elements in a plurality of different substrates; after each reactive ion etch step, using the interferometer apparatus to produce interference fringes; and using a different formula for changing the gas constituency of each successive reactive ion etch in response to information deduced from a study of said interference fringes.
Claim 11
Dependent Claim
64 words
The method of claim 1 further comprising the steps of: using reactive ion etching to form a plurality of different lens elements in a plurality of different substrates; after each reactive ion etch step, determining the aberrations in the lens elements formed thereby; and using information from said determination of aberrations to adjust the change of gas constituency during a successive ion etch step.
Claim 12
Dependent Claim
43 words
The method of claim 10 wherein: the step of determining aberrations in the lens element comprises the step of projecting light through a lens element in an interferometer and causing said projected light to interfere with reference beam light to form interference fringes.
Claim 13
Dependent Claim
38 words
The method of claim 10 wherein: at least two different gases are supplied through the gas input apparatus; and the step of changing the gas constituency comprises the step of changing the ratio of said two different gases.
Claim 14
Dependent Claim
33 words
The method of claim 12 wherein: the two gases are CHF 3 and oxygen; and during each reactive ion etch step, the proportion of oxygen is reduced by more than about fifteen percent.
Claim 15
Dependent Claim
62 words
The method of claim 13 wherein: at the beginning of each reactive ion etch step, the oxygen is in the range of 3.8 percent to 5.3 percent, and at the end of each reactive ion etch step, a proportion of oxygen is in the range of 3.1 percent to 3.6 percent, and the remainder of the gas constituency is CHF 3 .
Claim 16
Dependent Claim
22 words
The method of claim 12 wherein: during the reactive ion etch step, the ratio of the two gases is changed substantially continuously.
References Cited (Backward Citations)
US4813762A
Cited
US5135590A
Cited
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