Floating gate memory array device having improved immunity to write disturbance

Claim 2

An electrically programmable and erasable memory array device having a plurality of memory cells, each having a floating gate for the storage of charges thereon, said device comprising: a plurality of first address lines; a plurality of second address lines; a plurality of third address lines; each of said memory cells having three terminals, a first terminal connected to one of said first address lines, a second terminal connected to one of said second address lines, and a third terminal connected to one of said third address lines; high voltage source means for supplying a high voltage source; means for selecting certain of said plurality of first, certain of said plurality of second and certain of said plurality of third address lines for connecting to said high voltage source means to cause erasure of charges on the floating gate of the memory cells selected; and means for selecting certain of said plurality of first, certain of said plurality of second and certain of said plurality of third address lines for connecting to said high voltage source means to cause programming of charges on the floating gate of the memory cells selected.

Claim 3

The device of claim 1 further comprising: a grounding line, substantially parallel to said plurality of first address lines, intersecting each of said third address lines; switch means for connecting each of said third address lines to said grounding line.

Claim 4

The device of claim 2 wherein said switch means further comprises: a plurality of transistor means, each for connecting a third address line to said grounding line.

Claim 5

An electrically programmable and erasable memory array device having a plurality of memory cells, each having a floating gate for the storage of charges thereon, said device comprising: a plurality of first address lines; a plurality of second address lines; a plurality of third address lines; each of said memory cells having three terminals, a first terminal connected to one of said first address lines, a second terminal connected to one of said second address lines, and a third terminal connected to one of said third address lines; means for selecting certain of said first, second and third address lines for injecting hot electrons generated by abrupt potential drop onto the floating gate of a memory cell when the associated ones of the second address line and the third address line are raised to a first predetermined potential above that of the associated first address line, with the potential applied to said third address line being above the potential applied to said associated one of the second address lines; and means for selecting certain of said first, second and third address lines for inducing Fowler-Nordheim tunneling of charges from the floating gate to said second terminal when the associated second address line is raised to a second pre-determined potential above the associated first address line.

Claim 6

An electrically programmable and erasable memory array device having a plurality of memory cells, each having a floating gate for the storage of charges thereon, said device comprising: a plurality of first address lines; a plurality of second address lines; a plurality of third address lines; each of said memory cells having three terminals, a first terminal connected to one of said first address lines, a second terminal connected to one of said second address lines, and a third terminal connected to one of said third address lines; means for selecting certain of said first, second and third address lines for injecting hot electrons generated by abrupt potential drop onto the floating gate of a memory cell when the associated ones of the second address line and the third address line are raised to a first predetermined potential above that of the associated first address line, with the potential applied to said third address line being above the potential applied to said associated one of the second address lines; and means for selecting certain of said first, second and third address lines for inducing Fowler-Nordheim tunneling of charges from the floating gate to said second terminal when the associated second address line is raised to a second pre-determined potential above the associated first address line.

Claim 7

The device of claim 4 wherein said first address lines are column address lines, said second address lines are common address lines, and wherein each combination of one of the plurality of column address lines and one of the plurality of row address lines define a different one of the plurality of memory cells.

Claim 8

The device of claim 5 wherein said plurality of column address lines are substantially parallel to one another and said plurality of row address lines are substantially parallel to one another and with said column address lines substantially perpendicular to said row address lines.

Claim 9

The device of claim 6 wherein each of said plurality of common address lines has an associated row address line, is substantially parallel thereto, and connects to the third terminal of the memory cells to which the associated row address line is connected.

Claim 10

The device of claim 6 wherein each of said plurality of common address lines has two associated row address lines, is positioned therebetween and is substantially parallel thereto, said common address line connects to the third terminal of the memory cells to which the associated row address lines are connected.

Claim 11

The device of claim 8 further comprising: a plurality of grounding lines substantially parallel to said plurality of column address lines, intersecting each of said common address lines; switch means for connecting each of said common address lines to each of said grounding lines.

Claim 12

The device of claim 9 wherein said switch means further comprises: p1 a plurality of transistor means each for connecting a common address line to said grounding line, each of said transistor means further comprises: a source connected to said grounding line; a drain connected to said common address line; and a gate connected to the associated row address line.

Claim 13

The device of claim 10 wherein said grounding line is made of metal.

Claim 14

The device of claim 11 wherein each of said common address lines is made of metal, diffusion, silicide or polycide.

Claim 15

The device of claim 8 wherein each of said common address lines is made of metal, diffusion, silicide or polycide.