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US5289412A Expired / Lapsed US ⏱️ 0.0 years remaining

High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories

Assignee: Intel Corp
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Filing: 1992-06-19
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Granted: 1994-02-22
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Expires: 2012-06-19
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Abstract

Abstract A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array. The circuit includes a first branch which has transistor circuitry for establishing a reference current, a second branch of the circuit including a first transistor device and apparatus for mirroring the reference current through the first transistor device, and a plurality of output branches each connected to a sense amplifier to provide a reference voltage to be used by the sense amplifier. Each of the output branches includes a second transistor device with characteristics essentially identical to the characteristics of the first transistor device. Apparatus is included in the output branches for providing voltages at all terminals of the second transistor devices equal to the voltages at all terminals of the first transistor device so that the reference current through each of the second transistor devices is forced to be identical to that through the first transistor device. The second branch is replicated to increase current available and circuit speed.

Inventors

  • 👤 Kevin W. Frary
  • 👤 Sachidanandan Sambandan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 22:13
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/26; G11C16/28

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 166 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device; means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; and means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor.
Claim 2
Dependent Claim 166 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device; means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; and means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor.
Claim 3
Dependent Claim 192 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device, the second branch of the circuit being duplicated a plurality of times to optimize the switching speed of the circuit on power down and power up; means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; and means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor.
Claim 4
Dependent Claim 192 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device, the second branch of the circuit being duplicated a plurality of times to optimize the switching speed of the circuit on power down and power up; means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; and means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor.
Claim 5
Dependent Claim 202 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device; means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor; and means for providing a voltage at the gates of the second transistors when power to the circuit is reduced to enable the quick turn on of the second transistors when power to the circuit is increased.
Claim 6
Dependent Claim 202 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device; means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor; and means for providing a voltage at the gates of the second transistors when power to the circuit is reduced to enable the quick turn on of the second transistors when power to the circuit is increased.
Claim 7
Dependent Claim 216 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device, means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; and means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor; means for rapidly disabling the means for providing a first current through the first branch of the circuit when power to the circuit is reduced; and means rapidly enabling the means for providing a first current through the first branch of the circuit when power to the circuit is increased.
Claim 8
Dependent Claim 216 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising: a first branch of the circuit; means for providing a first current through the first branch of the circuit; a second branch of the circuit including a first transistor device, means for mirroring the first current through the second branch of the circuit including the first transistor device; a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier, each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor; and means for mirroring the current through the first transistor through the second transistor, the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor; means for rapidly disabling the means for providing a first current through the first branch of the circuit when power to the circuit is reduced; and means rapidly enabling the means for providing a first current through the first branch of the circuit when power to the circuit is increased.
Claim 9
Dependent Claim 139 words
A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array as claimed in claim 4 in which the means for rapidly disabling the means for providing a first current through the first branch of the circuit when power to the circuit is reduced comprises a current limiting device connected in the first branch, and means for switching the current limiting device to a non-conducting state when power is reduced; and the means for rapidly enabling the means for providing a first current through the first branch of the circuit when power to the circuit is increased comprises means for switching the current limiting device to a conducting state when power is increased.

References Cited (Backward Citations)

US4807188A Cited
US5163021A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-02-21 1997-08-23 1998-02-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-02-21 2001-08-23 2002-02-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-02-21 2005-08-23 2006-02-22 $7700.00 Window Closed / Lapsed

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