Sensing amplifier circuit for data readout from a semiconductor memory device

Claim 2

A semiconductor memory device comprising: a plurality of sense amplifiers provided on one output signal line for reading data stored in a memory cell, said sense amplifiers being connected in parallel to each other; and a control signal generation circuit for generating a control signal by which said sense amplifiers are selectively activated.

Claim 3

A semiconductor memory device according to claim 1, wherein the drive capability of one of said sense amplifiers is greater than that of another one of said sense amplifiers.

Claim 4

A semiconductor memory device according to claim 2, wherein said control signal generation circuit generates said control signal so that said one sense amplifier having a greater drive capability is activated during a predetermined time period after an address from which data are to be read out is changed, and that said another sense amplifier is activated during a time period other than said predetermined time period.

Claim 5

A semiconductor memory device according to claim 1, wherein said sense amplifiers are differential type sense amplifiers.

Claim 6

A semiconductor memory device comprising: a plurality of sense amplifiers provided on one output signal line for reading data stored in a memory cell, said sense amplifiers being connected in parallel to each other, and a control signal generation circuit for generating a control signal by which said sense amplifiers are selectively activated, wherein the drive capability of one of said sense amplifiers is greater than that of another one of said sense amplifiers, and wherein said control signal generation circuit generates said control signal so that said one sense amplifier having a greater drive capability is activated during a predetermined time period after an address from which data are to be read out is changed, and that said another sense amplifier is activated during a time period other than said predetermined time period.

Claim 7

A semiconductor memory device comprising: a plurality of sense amplifiers provided on one output signal line for reading data stored in a memory cell, said sense amplifiers being connected in parallel to each other, and a control signal generation circuit for generating a control signal by which said sense amplifiers are selectively activated, wherein the drive capability of one of said sense amplifiers is greater than that of another one of said sense amplifiers, and wherein said control signal generation circuit generates said control signal so that said one sense amplifier having a greater drive capability is activated during a predetermined time period after an address from which data are to be read out is changed, and that said another sense amplifier is activated during a time period other than said predetermined time period.

Claim 8

A semiconductor memory with reduced power consumption, comprising: first and second amplifiers connected in parallel to an output terminal of a memory cell, and a controller for generating a control signal for selectively activating one of the first and second amplifiers for only a portion of a memory read operation.

Claim 9

A semiconductor memory with reduced power consumption, comprising: first and second amplifiers connected in parallel to an output terminal of a memory cell, and a controller for generating a control signal for selectively activating one of the first and second amplifiers for only a portion of a memory read operation.

Claim 10

The semiconductor memory according to claim 6, wherein the first amplifier has a higher gain than the second amplifier, and the controller selectively activates the first amplifier and deactivates the second amplifier at the beginning of the memory read operation so that the amplifier amplifying a data signal read from the memory cell in accordance with the higher gain.

Claim 11

The semiconductor memory according to claim 7, wherein the controller deactivates the first amplifier after a valid read operation has occurred, and thereafter activates the second amplifier to amplify the data signal at a gain lower then the higher gain so that power is conserved.

Claim 12

The semiconductor memory according to claim 6, wherein the first amplifier consumes power at a level greater than that consumed by the second amplifier.

Claim 13

The semiconductor memory according to claim 9, wherein the second amplifier is automatically and continuously activated whenever the semiconductor memory is powered on, and the controller selectively activates the first amplifier only during a portion of the memory read operation.

Claim 14

The semiconductor memory according to claim 6, wherein the first and second amplifiers are constructed as differential amplifiers.

Claim 15

The semiconductor memory according to claim 11, further comprising another memory cell for generating a reference signal.