US5293341A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory having a test function
Assignee: Micron Memory Japan Ltd
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Filing: 1993-07-02
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Granted: 1994-03-08
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Expires: 2013-07-02
Abstract
Abstract A first test mode signal generating circuit detects, at a timing at which a row address strobe signal changes from an inactive level, to an active level that a column address strobe signal and a write control signal are at an active level to generate an active first test mode signal. A control signal generating circuit detects, during a period in which the row address strobe signal is at the active level, that the column address strobe signal changes from an active level, through an inactive level, and to the active level again to generate an active control signal. A second test mode signal generating circuit generates an active second test mode signal when the first test mode signal and the control signal are at the active level. The first test circuit tests a memory circuit in response to output of the active first test mode signal, and a second test circuit tests the memory circuit in response to output of the active second test mode signal.
Inventors
- 👤 Akira Tsujimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:59
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/46; G01; G01R; G01R31/00; G01R31/28; G01R31/317; G01R31/31701; G11C29/14; G11C29/18
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
211 words
A semiconductor memory device, comprising: a first test mode signal generating circuit for receiving a row address strobe signal, a column address strobe signal, and a write control signal, and for detecting, at a timing at which the row address strobe signal changes from an inactive level to an active level, that the column address strobe signal and the write control signal are at an active level to output an active first test mode signal; a control signal generating circuit for receiving the row address strobe signal and the column address strobe signal, and for detecting, during a period in which the row address strobe signal is at the active level, that the column address strobe signal changes from the active level, through the inactive level, and then the active level again to generate the active control signal; a memory circuit for storing data; a first test circuit, coupled to the first test mode signal generating circuit and the memory circuit, for testing the memory circuit in response to output of the active first test mode signal; and a second test circuit, coupled to the second test mode signal generating circuit and the memory circuit, for testing the memory circuit in response to output of the active second test mode signal.
Claim 2
Dependent Claim
211 words
A semiconductor memory device, comprising: a first test mode signal generating circuit for receiving a row address strobe signal, a column address strobe signal, and a write control signal, and for detecting, at a timing at which the row address strobe signal changes from an inactive level to an active level, that the column address strobe signal and the write control signal are at an active level to output an active first test mode signal; a control signal generating circuit for receiving the row address strobe signal and the column address strobe signal, and for detecting, during a period in which the row address strobe signal is at the active level, that the column address strobe signal changes from the active level, through the inactive level, and then the active level again to generate the active control signal; a memory circuit for storing data; a first test circuit, coupled to the first test mode signal generating circuit and the memory circuit, for testing the memory circuit in response to output of the active first test mode signal; and a second test circuit, coupled to the second test mode signal generating circuit and the memory circuit, for testing the memory circuit in response to output of the active second test mode signal.
Claim 3
Dependent Claim
126 words
The semiconductor memory device according to claim 1, further comprising: a third test mode signal generating circuit for receiving the first test mode signal and the control signal, and for generating an active second test mode signal when the first test mode signal and the control signal are at an active level; a third test circuit coupled to the third test mode signal generating circuit and the memory circuit, for testing the memory circuit in response to output of the active third test mode signal; and selecting means coupled to the second and third test mode signal generating circuits for receiving a select signal and for controlling outputs of the second and third test mode signal generating circuit in response to output of the select signal.
Claim 4
Dependent Claim
83 words
The semiconductor memory device according to claim 1, wherein the second test mode signal generating circuit receives the select signal to generate a plurality of second test mode signals; and further comprising: selecting means for activating one of the plurality of second test mode signals in response to output of the select signal when the first test mode signal and the control signal are at an active level; and test circuits provided in one-to-one correspondence with the plurality of second test mode signals.
Claim 5
Dependent Claim
145 words
A test mode signal generating circuit for a semiconductor memory device, comprising: a first test mode signal generating circuit for detecting, at a timing at which a row address strobe signal changes from an inactive level to an active level, that a column address strobe signal and a write control signal are at an active level to generate an active first test mode signal; a control signal generating circuit for detecting, during a period in which the row address strobe signal is at the active level, that the column address strobe signal changes from an active level, through an inactive level, and then to the active level again, to generate an active control signal; and a second test mode signal generating circuit for generating an active second test mode signal when the first test mode signal and the control signal are at a high level.
Claim 6
Dependent Claim
145 words
A test mode signal generating circuit for a semiconductor memory device, comprising: a first test mode signal generating circuit for detecting, at a timing at which a row address strobe signal changes from an inactive level to an active level, that a column address strobe signal and a write control signal are at an active level to generate an active first test mode signal; a control signal generating circuit for detecting, during a period in which the row address strobe signal is at the active level, that the column address strobe signal changes from an active level, through an inactive level, and then to the active level again, to generate an active control signal; and a second test mode signal generating circuit for generating an active second test mode signal when the first test mode signal and the control signal are at a high level.
References Cited (Backward Citations)
US5243570A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-07 | 1997-09-06 | 1998-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-07 | 2001-09-06 | 2002-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-07 | 2005-09-06 | 2006-03-08 | $7700.00 | Window Closed / Lapsed |