US5296092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planarization method for a semiconductor substrate
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-04-30
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Granted: 1994-03-22
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Expires: 2012-04-30
Abstract
Abstract Disclosed is a method for planarizing the insulating layer formed on a semiconductor substrate without forming voids. An insulating layer is coated on a semiconductor substrate on which a metal wiring layer has been previously formed, and then a resist layer serving as a sacrificial layer is formed on the insulating layer. Etching the sacrificial layer provides a sacrificial residue on the insulating layer between portions of the metal wiring layer. After an upper portion of the insulating layer is istropically etched, the insulating layer and sacrificial residue are anisotropically etched. An insulating layer thus-obtained has a good profile so that a planarized insulating interlayer free of voids is obtained by an additional etch-back process using a second sacrificial layer. Consequently, a subsequent second metal wiring formation or lithography process can be easily carried out.
Inventors
- 👤 Chunghoan Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
80 words
A method for the planarization of a semiconductor substrate comprising the steps of: (a) coating an insulating layer on a semiconductor substrate on which a metal wiring layer has been previously formed; (b) forming a sacrificial layer on said insulating layer; (c) etching said sacrificial layer forming sacrificial residues on said insulating layer between portions of said metal wiring layer; (d) isotropically etching said insulating layer; and (e) anisotropically etching said sacrificial residues and said isotropically etched insulating layer simulataneously.
Claim 2
Independent Claim
80 words
A method for the planarization of a semiconductor substrate comprising the steps of: (a) coating an insulating layer on a semiconductor substrate on which a metal wiring layer has been previously formed; (b) forming a sacrificial layer on said insulating layer; (c) etching said sacrificial layer forming sacrificial residues on said insulating layer between portions of said metal wiring layer; (d) isotropically etching said insulating layer; and (e) anisotropically etching said sacrificial residues and said isotropically etched insulating layer simulataneously.
Claim 3
Dependent Claim
40 words
A method as claimed in claim 1, wherein the method further comprises steps of: forming a second insulating layer and a second sacrificial layer; and etching back said insulating layer resulting in a planarized surface thereof, after said step (e).
Claim 4
Dependent Claim
27 words
A method as claimed in claim 2, further comprising the step of forming a third insulating layer on said planarized surface obtained after said etching back step.
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1, wherein said insulating layer is a SiO 2 layer formed by a CVD method.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 1, wherein said sacrificial layer is a resist layer, a polyimide layer or an SOG layer.
Claim 7
Dependent Claim
34 words
A method as claimed in claim 1, wherein said sacrificial layer is etched so that the height of said sacrificial residue is lower than that of said insulating layer over said metal wiring layers.
Claim 8
Dependent Claim
34 words
A method as claimed in claim 6, wherein said insulating layer is istropically etched so that the insulating layer over said metal wiring layer has the same height as that of said sacrificial residue.
Claim 9
Dependent Claim
26 words
A method as claimed in claim 1, wherein the etch selectivity of said sacrificial residue with respect to said insulating layer is 3:1˜5:1 in anisotropic etching.
Claim 10
Dependent Claim
26 words
A method as claimed in claim 1, wherein a gap between portions of said metal wiring layer formed on said semiconductor substrate is about 0.8 μm.
Claim 11
Independent Claim
146 words
A method for the planarization of a semiconductor substrate comprising the steps of: (a) coating an insulating layer on a semiconductor substrate on which metal wiring layers have been formed, said insulating layer having a plurality of raised portions corresponding in position over said metal wiring layers; (b) forming a sacrificial layer on said insulating layer; (c) etching said sacrificial layer so as to form a plurality of sacrificial residues on portions of said insulating layer disposed between said metal wiring layers; (d) isotropically etching said raised portions of said insulating layer to substantially eliminate said raised portions such that said insulating layer and said sacrificial residues are of approximately the same height relative to one another; and (e) anisotropically etching said sacrificial residues and said isotropically etched insulating layer so that said insulating layer is provided with a substantially planar surface substantially withough voids therein.
Claim 12
Independent Claim
146 words
A method for the planarization of a semiconductor substrate comprising the steps of: (a) coating an insulating layer on a semiconductor substrate on which metal wiring layers have been formed, said insulating layer having a plurality of raised portions corresponding in position over said metal wiring layers; (b) forming a sacrificial layer on said insulating layer; (c) etching said sacrificial layer so as to form a plurality of sacrificial residues on portions of said insulating layer disposed between said metal wiring layers; (d) isotropically etching said raised portions of said insulating layer to substantially eliminate said raised portions such that said insulating layer and said sacrificial residues are of approximately the same height relative to one another; and (e) anisotropically etching said sacrificial residues and said isotropically etched insulating layer so that said insulating layer is provided with a substantially planar surface substantially withough voids therein.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |