US5296735A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power semiconductor module with multiple shielding layers
Assignee: Mitsubishi Electric Corp
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Filing: 1991-07-09
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Granted: 1994-03-22
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Expires: 2011-07-09
Abstract
Abstract A first insulating layer (32), a first shield pattern (iii) and a second insulating layer (112) are layered on an aluminum substrate (31) in that order. A first and a second power switching element (1, 2), which are in totem pole like connection, are provided On the second insulating layer (112). Also provided on the second insulating layer (112) are a first and a second control circuit (13, 14), through a second and a third shield pattern (101, 104) as well as a third and a fourth insulating layer (105, 106). The first shield pattern (111) is kept at a certain reference potential, because ±he first shield pattern (11) connected to a power source terminal N. The second and the third shield pattern (101, 104) are kept at potentials corresponding to the potentials of the output terminals of the first and the second power switching element (1, 2), respectively.
Inventors
- 👤 Masanori Fukunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:49
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/611; H10W70/67; H10W70/68; H10W70/6875; H10W90/00; H10W44/00; H10W44/20; H10W44/226; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5524; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
231 words
A semiconductor device comprising: a metal substrate; a first insulating layer formed on said metal substrate; a first shield pattern composed of conductors formed on said first insulating layer; a supply terminal to which a reference potential is applied; first connection means for connecting said first shield pattern to said supply terminal; a second insulating layer formed on said first shield pattern; second and third shield patterns composed of conductors formed on said second insulating layer; a third insulating layer formed on said second shield pattern; a fourth insulating layer formed on said third shield pattern; first and second power switching elements formed on said first insulating layer, said first and second power switching elements each having a first main terminal and a second main terminal, the second main terminal of said first power switching element being connected to the first main terminal of said second power switching element to form an output node; a first control circuit formed on said third insulating layer for turning said first power switching element ON/OFF; a second control circuit formed on said fourth insulating layer for turning said second power switching element ON/OFF; second connection means for connecting said second shield pattern to the second main terminal of said first power switching element; and third connection means for connecting said third shield pattern to the second main terminal of said second power switching element.
Claim 2
Dependent Claim
231 words
A semiconductor device comprising: a metal substrate; a first insulating layer formed on said metal substrate; a first shield pattern composed of conductors formed on said first insulating layer; a supply terminal to which a reference potential is applied; first connection means for connecting said first shield pattern to said supply terminal; a second insulating layer formed on said first shield pattern; second and third shield patterns composed of conductors formed on said second insulating layer; a third insulating layer formed on said second shield pattern; a fourth insulating layer formed on said third shield pattern; first and second power switching elements formed on said first insulating layer, said first and second power switching elements each having a first main terminal and a second main terminal, the second main terminal of said first power switching element being connected to the first main terminal of said second power switching element to form an output node; a first control circuit formed on said third insulating layer for turning said first power switching element ON/OFF; a second control circuit formed on said fourth insulating layer for turning said second power switching element ON/OFF; second connection means for connecting said second shield pattern to the second main terminal of said first power switching element; and third connection means for connecting said third shield pattern to the second main terminal of said second power switching element.
Claim 3
Dependent Claim
44 words
A semiconductor device in accordance with claim 1, wherein said first connection means includes: a metal wiring pattern formed on said first insulating layer and connected to said supply terminal; and an external wire connecting said metal wiring pattern and said first shield pattern.
Claim 4
Dependent Claim
64 words
A semiconductor device in accordance with claim 2, wherein said supply terminal is one of a pair of power source terminals, one of said pair of power source terminals being connected to said first main terminal of said first power switching element, and the other of said pair of power source terminals being connected to said second main terminal of said secondpower switching element.
Claim 5
Dependent Claim
230 words
A semiconductor device, comprising: a metal substrate; a first insulating layer formed on said metal substrate; a first shield pattern composed of conductors formed on said first insulating layer; a supply terminal to which a reference potential is applied; first connection means for connecting said first shield pattern to said supply terminal; a second insulating layer formed on said first shield pattern; second and third shield patterns composed of conductors formed on said second insulating layer; a third insulating layer formed on said second shield pattern; a fourth insulating layer formed on said third shield pattern; first and second power switching elements formed on said second insulating layer, said first and second power switching elements each having a first main terminal and a second main terminal, the second main terminal of said first power switching element being connected to the first main terminal of said second power switching element to form an output node; a first control circuit formed on said third insulating layer for turning said first power switching element ON/OFF; a second control circuit formed on said fourth insulating layer for turning said second power switching element ON/OFF; second connection means for connecting said second shield pattern to the second main terminal of said first power switching element; and third connection means for connecting said third shield pattern to the second main terminal of said second switching element.
Claim 6
Dependent Claim
230 words
A semiconductor device, comprising: a metal substrate; a first insulating layer formed on said metal substrate; a first shield pattern composed of conductors formed on said first insulating layer; a supply terminal to which a reference potential is applied; first connection means for connecting said first shield pattern to said supply terminal; a second insulating layer formed on said first shield pattern; second and third shield patterns composed of conductors formed on said second insulating layer; a third insulating layer formed on said second shield pattern; a fourth insulating layer formed on said third shield pattern; first and second power switching elements formed on said second insulating layer, said first and second power switching elements each having a first main terminal and a second main terminal, the second main terminal of said first power switching element being connected to the first main terminal of said second power switching element to form an output node; a first control circuit formed on said third insulating layer for turning said first power switching element ON/OFF; a second control circuit formed on said fourth insulating layer for turning said second power switching element ON/OFF; second connection means for connecting said second shield pattern to the second main terminal of said first power switching element; and third connection means for connecting said third shield pattern to the second main terminal of said second switching element.
Claim 7
Dependent Claim
37 words
A semiconductor device in accordance with claim 4, wherein said second insulating layer is provided with a through hole and said first connection means connects said first shield pattern to said supply terminal through said through hole.
Claim 8
Dependent Claim
23 words
A semiconductor device in accordance with claim 5, wherein said first connection means includes a metal wiring pattern formed in said through hole.
Claim 9
Dependent Claim
65 words
A semiconductor device in accordance with claim 6, wherein said supply terminal is one of a pair of power source terminals, one of said pair of power source terminals being connected to said first main terminal of said first power switching element, and the other of said pair of power source terminals being connected to said second main terminal of said second power switching element.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |