US5316971A
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Methods for programming antifuses having at least one metal electrode
Assignee: Microsemi SoC Corp
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Filing: 1992-09-18
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Granted: 1994-05-31
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Expires: 2012-09-18
Abstract
Abstract A method for programming antifuses having at least one metal electrode includes the steps of providing an antifuse programming voltage source, capable of supplying alternating positive and negative programming voltage pulses; providing a programming path from the antifuse programming voltage source to the antifuse; and providing a selected number of alternating positive and negative programming voltage pulses to the antifuse through the programming path.
Inventors
- 👤 Steve S. Chiang
- 👤 Wenn-Jei Chen
- 👤 Esam Elashmawi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:18
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
204 words
A method for programming an antifuse including an antifuse material disposed between a lower electrode and an upper electrode, at least one of said lower and upper electrodes comprising a metal, said antifuse characterized by programming in response to a programming potential, comprising the steps of: (1) providing an applied voltage equal to or greater than said programming potential and comprising a first applied voltage potential and a second applied voltage potential, said first applied voltage potential being more positive than said second applied voltage potential; (2) applying, for a first time period, said applied voltage between said upper and lower antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a first polarity orientation; (3) applying, for a second time period, said applied voltage between said upper and lower antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a second polarity orientation opposite to said first polarity orientation; and (4) repeating steps (2) and (3) a number of times to form a read-disturb resistance filament between said upper and lower electrodes, between 1 and 1,000 times to form a read-disturb resistance filament between said upper and lower electrodes.
Claim 2
Independent Claim
204 words
A method for programming an antifuse including an antifuse material disposed between a lower electrode and an upper electrode, at least one of said lower and upper electrodes comprising a metal, said antifuse characterized by programming in response to a programming potential, comprising the steps of: (1) providing an applied voltage equal to or greater than said programming potential and comprising a first applied voltage potential and a second applied voltage potential, said first applied voltage potential being more positive than said second applied voltage potential; (2) applying, for a first time period, said applied voltage between said upper and lower antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a first polarity orientation; (3) applying, for a second time period, said applied voltage between said upper and lower antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a second polarity orientation opposite to said first polarity orientation; and (4) repeating steps (2) and (3) a number of times to form a read-disturb resistance filament between said upper and lower electrodes, between 1 and 1,000 times to form a read-disturb resistance filament between said upper and lower electrodes.
Claim 3
Dependent Claim
25 words
The method of claim 1 where said a number of times is chosen to impart to said antifuse a selected degree of immunity to electromigration.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said first and second time periods are between about 1 μsec and 10 sec.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said programming potential is between about 5 volts and 100 volts.
Claim 6
Independent Claim
170 words
A method for programming a metal-to-metal antifuse including an antifuse material disposed between a lower metal electrode and an upper metal electrode, said antifuse characterized by a programming potential, comprising the steps of; (1) providing an applied voltage equal to or greater than said programming potential and comprising a first applied voltage potential and a second applied voltage potential, said first applied voltage potential being more positive than said second applied voltage potential; (2) applying, for a first time period, said applied voltage between said upper and lower metal antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a first polarity orientation; (3) applying, for a second time period, said applied programming voltage between said upper and lower metal antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a second polarity orientation opposite to said first polarity orientation; and (4) repeating steps (2) and (3) a number of times between 1 and 1,000 times.
Claim 7
Independent Claim
170 words
A method for programming a metal-to-metal antifuse including an antifuse material disposed between a lower metal electrode and an upper metal electrode, said antifuse characterized by a programming potential, comprising the steps of; (1) providing an applied voltage equal to or greater than said programming potential and comprising a first applied voltage potential and a second applied voltage potential, said first applied voltage potential being more positive than said second applied voltage potential; (2) applying, for a first time period, said applied voltage between said upper and lower metal antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a first polarity orientation; (3) applying, for a second time period, said applied programming voltage between said upper and lower metal antifuse electrodes, said first and second applied voltage potentials applied to said upper and lower electrodes with a second polarity orientation opposite to said first polarity orientation; and (4) repeating steps (2) and (3) a number of times between 1 and 1,000 times.
Claim 8
Dependent Claim
25 words
The method of claim 5 where said a number of times is chosen to impart to said antifuse a selected degree of immunity to electromigration.
Claim 9
Dependent Claim
20 words
The method of claim 5 wherein said first and second time periods are between about 1 μsec and 10 sec.
Claim 10
Dependent Claim
17 words
The method of claim 5 wherein said programming potential is between about 5 volts and 100 volts.
References Cited (Backward Citations)
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