US5322712A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for improved quality of CVD copper films
Assignee: Versum Materials US LLC
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Filing: 1993-05-18
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Granted: 1994-06-21
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Expires: 2013-05-18
Abstract
Abstract Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometallic copper precursor and copper complex vapor of a volatile ligand or the hydrate of the ligand.
Inventors
- 👤 John A. T. Norman
- 👤 Arthur K. Hochberg
- 👤 David A. Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:38
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
137 words
A method for chemical vapor deposition of copper films on a substrate comprising the steps of: introducing vapors of a copper (I) organometallic precursor compound into a chemical vapor deposition (CVD) reactor; and simultaneously introducing into the reactor copper complex vapor of a volatile ligand or ligand hydrate having the general formula, ##STR3## wherein R 1 , and R 3 , are selected from the group consisting of alkyl, aryl, fluoroalkyl or fluoroaryl, R 2 is a halogen, alkyl, fluoroalkyl or fluoroaryl, X and Y are selected so that when X═0, Y is OH, NH 2 or N(R 4 )H, when X═NH, Y is NH 2 or N(R 4 )H, when X═NR 5 , Y is (R 4 )H, and R 4 and R 5 are selected from the group consisting of alkyl, aryl, fluoroalkyl and fluoroaryl.
Claim 2
Independent Claim
137 words
A method for chemical vapor deposition of copper films on a substrate comprising the steps of: introducing vapors of a copper (I) organometallic precursor compound into a chemical vapor deposition (CVD) reactor; and simultaneously introducing into the reactor copper complex vapor of a volatile ligand or ligand hydrate having the general formula, ##STR3## wherein R 1 , and R 3 , are selected from the group consisting of alkyl, aryl, fluoroalkyl or fluoroaryl, R 2 is a halogen, alkyl, fluoroalkyl or fluoroaryl, X and Y are selected so that when X═0, Y is OH, NH 2 or N(R 4 )H, when X═NH, Y is NH 2 or N(R 4 )H, when X═NR 5 , Y is (R 4 )H, and R 4 and R 5 are selected from the group consisting of alkyl, aryl, fluoroalkyl and fluoroaryl.
Claim 3
Dependent Claim
21 words
A method according to claim 1 wherein the substrate is heated to a temperature of between 120° C. and 350° C.
Claim 4
Dependent Claim
22 words
A method according to claim 1 wherein the CVD reactor is maintained at a pressure of between 10 mTorr and 100 Torr.
Claim 5
Dependent Claim
53 words
A method according to claim 1 wherein the vapors of the copper (I) organometallic precursor compound are introduced via an inert carrier gas selected from the groups consisting of helium, argon, nitrogen, neon, xenon, krypton and mixtures thereof introduced into the CVD reactor at a rate of from 1 sccm to 1000 sccm.
Claim 6
Dependent Claim
24 words
A method according to claim 1 wherein the volatile ligand or ligand hydrate is selected from the group consisting of hexafluoroacetylacetone, heptafluoroacetylacetone and hexafluoroacetylacetonedihydrate.
Claim 7
Dependent Claim
24 words
A method according to claim 1 wherein the copper (I) organometallic precursor compound is 1,1,1,5,5,5-hexafluoro-2,4 pentanedionato copper (I) trimethylvinylsilane and the ligand is 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
Claim 8
Independent Claim
40 words
A method for chemical vapor deposition of copper films on a substrate comprising the steps of: introducing vapor of 1,1,1,5,5,5-hexafluoro-2,4pentanedianato copper (I) trimethylvinylsilane into a chemical vapor depositor reactor; and simultaneously introducing into the reactor copper complex vapor of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
Claim 9
Independent Claim
40 words
A method for chemical vapor deposition of copper films on a substrate comprising the steps of: introducing vapor of 1,1,1,5,5,5-hexafluoro-2,4pentanedianato copper (I) trimethylvinylsilane into a chemical vapor depositor reactor; and simultaneously introducing into the reactor copper complex vapor of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-20 | 1997-12-20 | 1998-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-20 | 2001-12-20 | 2002-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-20 | 2005-12-20 | 2006-06-21 | $7700.00 | Window Closed / Lapsed |