US5324980A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-layer type semiconductor device with semiconductor element layers stacked in opposite direction and manufacturing method thereof
Assignee: Mitsubishi Electric Corp
•
Filing: 1992-08-07
•
Granted: 1994-06-28
•
Expires: 2012-08-07
Abstract
Abstract A multi-layer type semiconductor device is disclosed, in which a plurality of semiconductor layers are formed in vertically opposite directions. The multi-layer type semiconductor device is obtained by forming a first semiconductor layer, an insulating layer and a second semiconductor layer in the mentioned order on a main surface of a first substrate, forming a semiconductor device by using the second semiconductor layer as a base, with an exposed surface thereof directed upward, forming an insulating film on the semiconductor device, attaching a second substrate to the insulating film, thinning the first substrate to expose the first semiconductor layer, and forming a further semiconductor device by using the first semiconductor layer as a base, with an exposed surface of the first semiconductor layer directed upward. A single- chip type image forming system or sensing system may be provided by employing, as the semiconductor devices, a sensing device such as a photosensor, a pressure sensor or the like, a processing circuit for processing a signal received from the sensor, and a display device for displaying results of the processing. A large number of pads may be provided by arranging the pads on opposite surfaces of a chip.
Inventors
- 👤 Shigeru Kusunoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:05
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/80; H10F39/803; H10D; H10D88/00; H10F39/10; H10F39/12; H10F39/18; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; H10P72/00; H10P72/70; H10P72/74; H10P72/7426; H10P72/7432; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
120 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween; the first and second elements being oriented in vertical alignment to each other and back-to-back on said first and second semiconductor element layers.
Claim 2
Dependent Claim
120 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween; the first and second elements being oriented in vertical alignment to each other and back-to-back on said first and second semiconductor element layers.
Claim 3
Dependent Claim
137 words
A multi-layer semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween, and a first field oxide layer for interelement isolation; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween, and a second field oxide layer for element isolation; the first and second elements being oriented in vertical alignment to each other and back-to-back on said first and second semiconductor element elements.
Claim 4
Dependent Claim
137 words
A multi-layer semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween, and a first field oxide layer for interelement isolation; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween, and a second field oxide layer for element isolation; the first and second elements being oriented in vertical alignment to each other and back-to-back on said first and second semiconductor element elements.
Claim 5
Dependent Claim
20 words
The device of claim 2, wherein said first and second field oxide layers contact opposite surfaces of said insulating layer.
Claim 6
Dependent Claim
23 words
The device of claim 3, including a conductor filling said through-hole and contacting opposite surfaces of said first and second semiconductor element layers.
Claim 7
Dependent Claim
145 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween; the first and second elements being located in regions surrounded by field oxide layers for element isolation formed in contact with said insulating layer and being oriented back-to-back on said first and second semiconductor element layers, each of said regions including one or more of the semiconductor elements.
Claim 8
Dependent Claim
145 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween; the first and second elements being located in regions surrounded by field oxide layers for element isolation formed in contact with said insulating layer and being oriented back-to-back on said first and second semiconductor element layers, each of said regions including one or more of the semiconductor elements.
Claim 9
Dependent Claim
144 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween, a field oxide layer for element isolation and an interlayer insulation film; said second semiconductor element being isolated by said field oxide layer for element isolation and said interlayer insulation film; the first and second elements being oriented back-to-back on said first and second semiconductor element layers.
Claim 10
Dependent Claim
144 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween, a field oxide layer for element isolation and an interlayer insulation film; said second semiconductor element being isolated by said field oxide layer for element isolation and said interlayer insulation film; the first and second elements being oriented back-to-back on said first and second semiconductor element layers.
Claim 11
Dependent Claim
21 words
The device of claim 6, wherein a through-hole is formed only through said field oxide layer and said interlayer insulation film.
Claim 12
Dependent Claim
127 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween; the first and second elements being oriented back-to-back on said first and second semiconductor element layers; the thickness of each of the semiconductor element layers being less than 1 μm.
Claim 13
Dependent Claim
127 words
A multi-layer type semiconductor device, comprising: a substrate having a main surface; a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween; an insulating layer formed on the active layer portion of said first semiconductor layer; and a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween; the first and second elements being oriented back-to-back on said first and second semiconductor element layers; the thickness of each of the semiconductor element layers being less than 1 μm.
References Cited (Backward Citations)
US4939568A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |