Diamond/phosphor polycrystalline led and display

Claim 2

A semiconductor/phosphor polycrystalline light emitting diode comprising: a carrier injection layer including a semiconductor material with a selected bandgap; a light emitting layer including a polycrystalline phosphor material with a selected bandgap positioned on a surface of the carrier injection layer so as to form a junction therebetween, the light emitting layer emitting substantially all of the light of the light emitting diode; and the semiconductor material and the polycrystalline phosphor material being selected so that the bandgap of the semiconductor material is wider than the bandgap of the polycrystalline phosphor material.

Claim 3

A semiconductor/phosphor polycrystalline light emitting diode as claimed in claim 1 wherein the semiconductor material and the polycrystalline phosphor material are selected so that the discontinuities at the junction which would cause energy spikes are minimized.

Claim 4

A semiconductor/phosphor polycrystalline light emitting diode as claimed in claim 1 wherein the semiconductor material of the carrier injection layer has a first conductivity type and the polycrystalline phosphor material includes a passivated polycrystalline phosphor of opposite conductivity type to the first conductivity type of the semiconductor layer.

Claim 5

A semiconductor/phosphor polycrystalline light emitting diode comprising: a layer of polycrystalline diamond; and a layer of polycrystalline phosphor material positioned on a surface of the layer of polycrystalline diamond and forming a junction therebetween, the layer of polycrystalline diamond serving as a carrier injection layer and the layer of polycrystalline phosphor material emitting substantially all of the light in response to injection of carriers therein.

Claim 6

A semiconductor/phosphor polycrystalline light emitting diode comprising: a layer of polycrystalline diamond; and a layer of polycrystalline phosphor material positioned on a surface of the layer of polycrystalline diamond and forming a junction therebetween, the layer of polycrystalline diamond serving as a carrier injection layer and the layer of polycrystalline phosphor material emitting substantially all of the light in response to injection of carriers therein.

Claim 7

A semiconductor/phosphor polycrystalline light emitting diode comprising: a hole injection layer including polycrystalline P-type diamond; and a light emitting layer including a N-type polycrystalline phosphor material positioned on a surface of the electron injection layer and forming a junction therebetween, the polycrystalline phosphor layer emitting substantially all of the light of the light emitting diode.

Claim 8

A semiconductor/phosphor polycrystalline light emitting diode comprising: a hole injection layer including polycrystalline P-type diamond; and a light emitting layer including a N-type polycrystalline phosphor material positioned on a surface of the electron injection layer and forming a junction therebetween, the polycrystalline phosphor layer emitting substantially all of the light of the light emitting diode.

Claim 9

A semiconductor/phosphor polycrystalline light emitting diode comprising: a hole injection layer including polycrystalline P-type diamond; and a light emitting layer including a N-type polycrystalline phosphor material positioned on a surface of the electron injection layer and forming a junction therebetween, wherein the N-type polycrystalline phosphor material of the light emitting layer is selected from one of the group consisting of ZnO, ZnS, CdS, ZnCdS, ZnCdSe and ZnSe.

Claim 10

A semiconductor/phosphor polycrystalline light emitting diode comprising: a hole injection layer including polycrystalline P-type diamond; and a light emitting layer including a N-type polycrystalline phosphor material positioned on a surface of the electron injection layer and forming a junction therebetween, wherein the N-type polycrystalline phosphor material of the light emitting layer is selected from one of the group consisting of ZnO, ZnS, CdS, ZnCdS, ZnCdSe and ZnSe.

Claim 11

A semiconductor/phosphor polycrystalline light emitting diode comprising: a hole injection layer including polycrystalline P-type diamond; and a light emitting layer including a N-type polycrystalline phosphor material positioned on a surface of the electron injection layer and forming a junction therebetween, wherein the N-type polycrystalline phosphor material of the light emitting layer includes ZnO:Zn.

Claim 12

A semiconductor/phosphor polycrystalline light emitting diode comprising: a hole injection layer including polycrystalline P-type diamond; and a light emitting layer including a N-type polycrystalline phosphor material positioned on a surface of the electron injection layer and forming a junction therebetween, wherein the N-type polycrystalline phosphor material of the light emitting layer includes ZnO:Zn.

Claim 13

A semiconductor/phosphor polycrystalline light emitting diode as claimed in claim 5 wherein the light emitting layer is positioned on a (100) surface of the polycrystalline P-type diamond.

Claim 14

A semiconductor/phosphor polycrystalline light emitting diode as claimed in claim 5 wherein the light emitting layer is positioned on a (111) surface of the polycrystalline P-type diamond.

Claim 15

A semiconductor/phosphor polycrystalline light emitting diode comprising: a carrier injection layer including polycrystalline diamond; a light emitting layer including a polycrystalline phosphor material positioned on a surface of the carrier injection layer and forming a junction therebetween; an electrical contact positioned on a surface of the carrier injection layer opposite the surface having the light emitting layer deposited thereon; and an electrical contact positioned on a surface of the light emitting layer opposite the junction with the carrier injection layer and formed to allow the emission of light from the light emitting layer, substantially all of the light being emitted by the polycrystalline phosphor material.

Claim 16

A semiconductor/phosphor polycrystalline light emitting diode comprising: a carrier injection layer including polycrystalline diamond; a light emitting layer including a polycrystalline phosphor material positioned on a surface of the carrier injection layer and forming a junction therebetween; an electrical contact positioned on a surface of the carrier injection layer opposite the surface having the light emitting layer deposited thereon; and an electrical contact positioned on a surface of the light emitting layer opposite the junction with the carrier injection layer and formed to allow the emission of light from the light emitting layer, substantially all of the light being emitted by the polycrystalline phosphor material.

Claim 17

A semiconductor/phosphor polycrystalline light emitting diode as claimed in claim 10 wherein the electrical contact positioned on a surface of the light emitting layer includes indium-tin-oxide.

Claim 18

A semiconductor/phosphor polycrystalline light emitting diode comprising: an optically transparent base member; an electrical contact layer positioned on a surface of the base member, the contact layer being formed to allow the emission of light therethrough; a carrier injection layer including polycrystalline diamond positioned on the contact layer; a light emitting layer including a polycrystalline phosphor material positioned on the carrier injection layer and forming a junction therebetween; and an electrical contact positioned on a surface of the light emitting layer opposite the carrier injection layer, the light emitting layer emitting substantially all of the light through the carrier injection layer, the electrical contact layer and the base member in response to the injection of carriers into the light emitting layer.

Claim 19

A semiconductor/phosphor polycrystalline light emitting diode comprising: an optically transparent base member; an electrical contact layer positioned on a surface of the base member, the contact layer being formed to allow the emission of light therethrough; a carrier injection layer including polycrystalline diamond positioned on the contact layer; a light emitting layer including a polycrystalline phosphor material positioned on the carrier injection layer and forming a junction therebetween; and an electrical contact positioned on a surface of the light emitting layer opposite the carrier injection layer, the light emitting layer emitting substantially all of the light through the carrier injection layer, the electrical contact layer and the base member in response to the injection of carriers into the light emitting layer.

Claim 20

An array of semiconductor/phosphor polycrystalline light emitting diodes comprising: a plurality of semiconductor/phosphor polycrystalline light emitting diodes positioned in a regular pattern of rows and columns, each diode including a carrier injection layer including a semiconductor material with a selected bandgap; a light emitting layer including a polycrystalline phosphor material with a selected bandgap positioned on a surface of the carrier injection layer so as to form a junction therebetween, the polycrystalline phosphor layer emitting substantially all of the light of the light emitting diode; and the semiconductor material and the polycrystalline phosphor material being selected so that the bandgap of the semiconductor material is wider than the bandgap of the polycrystalline phosphor material and discontinuities at the junction which would cause energy spikes are minimized; and the carrier injection layer of each diode being connected to the carrier injection layer of each other diode in the same row and the light emitting layer of each diode being connected to the light emitting layer of each other diode in the same column to form a diode array.

Claim 21

An array of semiconductor/phosphor polycrystalline light emitting diodes comprising: a plurality of semiconductor/phosphor polycrystalline light emitting diodes positioned in a regular pattern of rows and columns, each diode including a carrier injection layer including a semiconductor material with a selected bandgap; a light emitting layer including a polycrystalline phosphor material with a selected bandgap positioned on a surface of the carrier injection layer so as to form a junction therebetween, the polycrystalline phosphor layer emitting substantially all of the light of the light emitting diode; and the semiconductor material and the polycrystalline phosphor material being selected so that the bandgap of the semiconductor material is wider than the bandgap of the polycrystalline phosphor material and discontinuities at the junction which would cause energy spikes are minimized; and the carrier injection layer of each diode being connected to the carrier injection layer of each other diode in the same row and the light emitting layer of each diode being connected to the light emitting layer of each other diode in the same column to form a diode array.

Claim 22

An array of semiconductor/phosphor polycrystalline light emitting diodes as claimed in claim 13 including in addition selection and driver circuits connected to the rows and columns for activating the plurality of semiconductor/phosphor polycrystalline light emitting diodes to provide a desired image.