Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film

Claim 2

A thin-film transistor comprising an insulative substrate and a thin-film transistor element arranged on the substrate, said thin-film transistor element comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer having an anodically oxidized region; source and drain electrodes electrically connected to portions of the i-type semiconductor layer through the n-type semiconductor layer and having anodically oxidized surface regions for protecting said source and drain electrodes and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes; and a data line electrically connected to said drain electrode and having an anodically oxidized surface region for protecting said data line.

Claim 3

The thin-film transistor according to claim 1, further comprising a pixel electrode, a contact layer and a first transparent conductive film located between said source electrode and said n-type semiconductor layer, and a contact layer and a second transparent conductive film located between said drain electrode and said n-type semiconductor layer to provide ohmic contacts between said source electrode and said n-type semiconductor layer, and between said drain electrode and said n-type semiconductor layer, the first transparent conductive film located between said source electrode and said n-type semiconductor layer being integrally formed with the pixel electrode.

Claim 4

The thin-film transistor according to claim 2, wherein said drain electrode covers said second transparent conductive film.

Claim 5

The thin film transistor according to claim 2, wherein said first and second transparent conductive films are made of oxide.

Claim 6

The thin film transistor according to claim 2, wherein said first and second transparent conductive films are made of ITO.

Claim 7

The thin film transistor according to claim 1, wherein said source and drain electrodes, and said data line are made of aluminum or aluminum alloy.

Claim 8

The thin-film transistor according to claim 1, wherein said source and drain electrodes are made of metal and have a thickness of 200 to 500 nm, and said n-type semiconductor layer has a thickness of 25 to 100 nm.

Claim 9

The thin-film transistor according to claim 1, wherein a resistivity of said i-type semiconductor layer is 100 or more times greater than a resistivity of said n-type semiconductor layer.

Claim 10

A thin-film transistor panel comprising an insulative substrate and a plurality of thin-film transistor elements arranged at predetermined intervals on the substrate, and connecting means electrically connecting said thin-film transistor elements, each of said thin-film transistor elements comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer having an anodically oxidized region; and source and drain electrodes electrically connected to portions of the i-type semiconductor layer through the n-type semiconductor layer and having anodically oxidized surface regions for protecting said source and drain electrodes and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes; said connecting means including data lines electrically connected to said drain electrodes of said thin-film transistor elements, and having an anodically oxidized surface region.

Claim 11

A thin-film transistor panel comprising an insulative substrate and a plurality of thin-film transistor elements arranged at predetermined intervals on the substrate, and connecting means electrically connecting said thin-film transistor elements, each of said thin-film transistor elements comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer having an anodically oxidized region; and source and drain electrodes electrically connected to portions of the i-type semiconductor layer through the n-type semiconductor layer and having anodically oxidized surface regions for protecting said source and drain electrodes and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes; said connecting means including data lines electrically connected to said drain electrodes of said thin-film transistor elements, and having an anodically oxidized surface region.

Claim 12

The thin-film transistor panel according to claim 9, wherein each of the thin-film transistor elements further comprises: a pixel electrode; a contact layer and a first transparent conductive film located between said source electrode and said n-type semiconductor layer, providing an ohmic contact between said source electrode and said n-type semiconductor layer; and wherein the first transparent conductive film located between said source electrode and said n-type semiconductor layer is integrally formed with the pixel electrode.

Claim 13

The thin-film transistor panel according to claim 10, wherein each of said drain electrodes covers a corresponding one of the second transparent conductive films.

Claim 14

The thin film transistor panel according to claim 11, wherein said first and second transparent conductive films are made of oxide.

Claim 15

The thin film transistor panel according to claim 11, wherein said first and second transparent conductive films are made of ITO.

Claim 16

The thin film transistor panel according to claim 9, wherein said source and drain electrodes, and said data line are made of aluminum or aluminum alloy.

Claim 17

The thin-film transistor panel according to claim 9, wherein said source and drain electrodes are made of metal and have a thickness of 200 to 500 nm, and said n-type semiconductor layers have a thickness of 25 to 100 nm.

Claim 18

The thin-film transistor panel according to claim 9, wherein a resistivity of said i-type semiconductor layers is 100 or more times greater than a resistivity of said n-type semiconductor layers.

Claim 19

A thin-film transistor panel comprising a plurality of thin-film transistor elements arranged in a matrix form, and data lines and gate lines connected to said thin-film transistor elements, each of said thin-film transistor elements comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer having an anodically oxidized region; and source and drain electrodes electrically connected to the portions of the i-type semiconductor layer through the n-type semiconductor layer and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes; and each of said data lines having an anodically oxidized surface region.

Claim 20

A thin-film transistor panel comprising a plurality of thin-film transistor elements arranged in a matrix form, and data lines and gate lines connected to said thin-film transistor elements, each of said thin-film transistor elements comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer having an anodically oxidized region; and source and drain electrodes electrically connected to the portions of the i-type semiconductor layer through the n-type semiconductor layer and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes; and each of said data lines having an anodically oxidized surface region.

Claim 21

The thin film transistor panel according to claim 17, wherein said source and drain electrodes, and said data lines are made of aluminum or aluminum alloy.

Claim 22

A thin-film transistor panel comprising an insulative substrate, thin-film transistor elements arranged in a matrix form on the substrate, and pixel electrodes connected to the thin-film transistor elements, each of said thin-film transistor elements comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer; source and drain electrodes; a first contact layer and a first transparent conductive film located between said source electrode and said n-type semiconductor layer for providing an ohmic contact between said source electrode and said n-type semiconductor layer, and a second contact layer and a second transparent conductive film located between said drain electrode and said n-type semiconductor layer for providing an ohmic contact between said drain electrode and said n-type semiconductor layer, the first transparent conductive films located between said source electrodes and said n-type semiconductor layers are integrally formed with the pixel electrodes, and said drain electrodes cover respective ones of said second transparent conductive films.

Claim 23

A thin-film transistor panel comprising an insulative substrate, thin-film transistor elements arranged in a matrix form on the substrate, and pixel electrodes connected to the thin-film transistor elements, each of said thin-film transistor elements comprising: a gate electrode; a gate-insulating film; an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween; an n-type semiconductor layer; source and drain electrodes; a first contact layer and a first transparent conductive film located between said source electrode and said n-type semiconductor layer for providing an ohmic contact between said source electrode and said n-type semiconductor layer, and a second contact layer and a second transparent conductive film located between said drain electrode and said n-type semiconductor layer for providing an ohmic contact between said drain electrode and said n-type semiconductor layer, the first transparent conductive films located between said source electrodes and said n-type semiconductor layers are integrally formed with the pixel electrodes, and said drain electrodes cover respective ones of said second transparent conductive films.

Claim 24

The thin film transistor panel according to claim 19, wherein said first and second transparent conductive films are made of ITO.