US5356478A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma cleaning method for removing residues in a plasma treatment chamber
Assignee: Lam Research Corp
•
Filing: 1994-01-03
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Granted: 1994-10-18
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Expires: 2014-01-03
Abstract
Abstract A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing residues on the interior surfaces. The cleaning gas mixture can also include a fluorine-based gas. For instance, the cleaning gas can include Cl 2 and O 2 and optionally CF 4 . An advantage of the cleaning method is that it is not necessary to open the plasma treatment chamber. Also, it is possible to completely remove all residues and prevent by-products formed during the cleaning step from remaining after the cleaning step.
Inventors
- 👤 Ching-Hwa Chen
- 👤 David Arnett
- 👤 David Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:27
CPC Classifications
B; B08; B08B; B08B3/00; B08B3/04; B08B3/10; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; B08B7/00; B08B7/0035; B44; B44C; B44C1/00; B44C1/22; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
73 words
A plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber, comprising: introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces.
Claim 2
Dependent Claim
73 words
A plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber, comprising: introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces.
Claim 3
Dependent Claim
15 words
The method of claim 1, wherein the cleaning gas mixture further comprises a fluorine-based gas.
Claim 4
Dependent Claim
18 words
The method of claim 1, wherein the chlorine-based gas comprises 10-25 % by volume of the cleaning gas.
Claim 5
Dependent Claim
17 words
The method of claim 2, wherein the fluorine-based gas comprises 2-10% by volume of the cleaning gas.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein the chlorine-based gas comprises Cl 2 , CCl 4 HCl or mixtures thereof.
Claim 7
Dependent Claim
21 words
The method of claim 2, wherein the fluorine-based gas comprises NF 3 , SF 6 , a fluorocarbon or mixture thereof.
Claim 8
Dependent Claim
19 words
The method of claim 6, wherein the fluorocarbon comprises CF 4 , C 2 F 6 or mixture thereof.
Claim 9
Dependent Claim
23 words
The method of claim 1, wherein the cleaning gas further contains H 2 O, H 2 O 2 O 3 or mixture thereof.
Claim 10
Dependent Claim
17 words
The method of claim 2, wherein the chlorine-based gas and the fluorine-based gas comprise a chlorofluorocarbon gas.
Claim 11
Dependent Claim
25 words
The method of claim 1, wherein the plasma cleaning gas removes carbon of organic residues, metals, and metal oxides in the form of gas by-products.
Claim 12
Dependent Claim
32 words
The method of claim 1, wherein at least one of aluminum and copper in the residues is converted into a gaseous form via reaction with the chlorine in the plasma cleaning gas.
Claim 13
Dependent Claim
32 words
The method of claim 2, wherein at least one of oxides and tungsten in the residues is converted into a gaseous form via reaction with the fluorine of the plasma cleaning gas.
Claim 14
Dependent Claim
16 words
The method of claim 1, wherein the plasma treatment chamber is evacuated during the cleaning step.
Claim 15
Dependent Claim
46 words
The method of claim 13, wherein during the cleaning step an interior of the plasma treatment chamber is initially at a high pressure and then at a low pressure, the high pressure being greater than 25 mTorr and the low pressure being less than 25 mTorr.
Claim 16
Dependent Claim
21 words
The method of claim 14, wherein the high pressure is around 40 mTorr and the low pressure is around 10 mTorr.
Claim 17
Dependent Claim
48 words
The method of claim 1, wherein at least one by-product selected from the group consisting of AlCl 3 CO, CO 2 Cl 2 CuCl, and WF 5 is removed from the plasma treatment chamber when the interior surfaces of the chamber are contacted with the plasma cleaning gas.
Claim 18
Dependent Claim
16 words
The method of claim 1, wherein the residues are removed without opening the plasma treatment chamber.
Claim 19
Dependent Claim
57 words
The method of claim 1, further comprising a step of dry etching one or more layers on at least one wafer prior to the plasma cleaning step, the layers including at least one of a photoresist, metal film and oxide film, the dry etching causing residues to be deposited on interior surfaces of the plasma treatment chamber.
Claim 20
Dependent Claim
58 words
The method of claim 18, wherein the dry etch comprises a chlorine-based dry etch and residues of the chlorine-based dry etch are removed by the plasma cleaning gas without leaving by-products that will interfere with a dry etch performed after the plasma cleaning step and without generating particles which would reduce a yield of a subsequent dry etch.
Claim 21
Dependent Claim
36 words
The method of claim 1, wherein the residues are completely removed from the interior surfaces of the plasma treatment chamber and no by-products remain in the plasma treatment chamber after the plasma cleaning step is terminated.
Claim 22
Dependent Claim
73 words
A plasma cleaning method for removing metal-containing residues in a plasma treatment chamber, comprising: introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing metal-containing residues on the interior surfaces.
Claim 23
Dependent Claim
73 words
A plasma cleaning method for removing metal-containing residues in a plasma treatment chamber, comprising: introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing metal-containing residues on the interior surfaces.
Claim 24
Dependent Claim
16 words
The method of claim 21, wherein the metal-residues include aluminum, titanium, copper, tungsten or mixture thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-17 | 2002-04-18 | 2002-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-17 | 2006-04-18 | 2006-10-18 | $7700.00 | Window Closed / Lapsed |