US5367481A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dynamic random access memory with complementary bit lines and capacitor common line
Assignee: Toshiba Corp
•
Filing: 1992-12-03
•
Granted: 1994-11-22
•
Expires: 2012-12-03
Abstract
Abstract A DRAM comprising a memory cell array having a dynamic type memory cell having one MOS transistor for transfer gate and one capacitor for data storage with one end connected to the transistor, a word line connected in common to the gate of each transistor in each row of the memory cell array, a bit line connected in common to each transistor in each column of the memory cell array, a bit line precharge circuit provided so as to precharge the bit line of the memory cell array at a predetermined timing, a capacitor common line provided so as to correspond to a pair of complementary bit lines of the memory cell array and connected in common to the other end of the capacitor of the memory cell, a capacitor common precharge circuit provided so as to precharge the capacitor common line at predetermined timing, capacitor common line transfer gates for connecting the capacitor common line to the input nodes of a sense amplifier and on/off controlled at a predetermined timing, and bit line transfer gates for connecting the input nodes of the sense amplifier and the complementary pair of bit lines, respectively, and on/off controlled at a predetermined timing.
Inventors
- 👤 Satoru Takase
- 👤 Tohru Furuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:11
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/4074; G11C11/403
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
420 words
A semiconductor memory device comprising: memory cells each including a transfer transistor and a data storage capacitor having a first electrode connected to a first terminal of said transfer transistor; word lines each connected to a control terminal of one of said transfer transistors; a bit line pair comprising first and second bit lines, wherein second terminals of said transfer transistors are connected to one of said first and second bit lines; a capacitor common line connected to second electrodes of said data storage capacitors; a sense amplifier having first and second input nodes; capacitor common line transfer gates, a first of said capacitor common line transfer gates connected between said capacitor common line and said first input node of said sense amplifier and a second of said capacitor common line transfer gates connected between said capacitor common line and said second input node of said sense amplifier; bit line transfer gates, a first of said bit line transfer gates connected between said first bit line and said first input node of said sense amplifier and connected to said first of said capacitor common line transfer gates, and a second of said bit line transfer gates connected between said second bit line and said second input node of said sense amplifier and connected to said second of said capacitor common line transfer gates; and read/write control circuitry for controlling reading and writing of data to said memory cells, said control circuitry including first means for supplying selection signals to said word lines, second means for supplying selection signals to switch said capacitor common line transfer gates, third means for supplying selection signals to switch said bit line transfer gates, and fourth means for supplying signals that activate/deactivate said sense amplifier; wherein, when reading data from one of said memory cells, said fourth means supplies signals to deactivate said sense amplifier, subsequently said second means switches said capacitor common line transfer gates OFF, subsequently said first means supplies a selection signal to one of said word lines, subsequently, or before said first means supplies the selection signal, said third means switches one of said first and second bit line transfer gates OFF, subsequently said second means switches one of said first and second capacitor common line transfer gates connected to said one of said first and second bit line transfer gates ON, subsequently said second means switches said one of said first and second capacitor common line transfer gates OFF, subsequently said fourth means supplies signals to activate said sense amplifier.
Claim 2
Dependent Claim
420 words
A semiconductor memory device comprising: memory cells each including a transfer transistor and a data storage capacitor having a first electrode connected to a first terminal of said transfer transistor; word lines each connected to a control terminal of one of said transfer transistors; a bit line pair comprising first and second bit lines, wherein second terminals of said transfer transistors are connected to one of said first and second bit lines; a capacitor common line connected to second electrodes of said data storage capacitors; a sense amplifier having first and second input nodes; capacitor common line transfer gates, a first of said capacitor common line transfer gates connected between said capacitor common line and said first input node of said sense amplifier and a second of said capacitor common line transfer gates connected between said capacitor common line and said second input node of said sense amplifier; bit line transfer gates, a first of said bit line transfer gates connected between said first bit line and said first input node of said sense amplifier and connected to said first of said capacitor common line transfer gates, and a second of said bit line transfer gates connected between said second bit line and said second input node of said sense amplifier and connected to said second of said capacitor common line transfer gates; and read/write control circuitry for controlling reading and writing of data to said memory cells, said control circuitry including first means for supplying selection signals to said word lines, second means for supplying selection signals to switch said capacitor common line transfer gates, third means for supplying selection signals to switch said bit line transfer gates, and fourth means for supplying signals that activate/deactivate said sense amplifier; wherein, when reading data from one of said memory cells, said fourth means supplies signals to deactivate said sense amplifier, subsequently said second means switches said capacitor common line transfer gates OFF, subsequently said first means supplies a selection signal to one of said word lines, subsequently, or before said first means supplies the selection signal, said third means switches one of said first and second bit line transfer gates OFF, subsequently said second means switches one of said first and second capacitor common line transfer gates connected to said one of said first and second bit line transfer gates ON, subsequently said second means switches said one of said first and second capacitor common line transfer gates OFF, subsequently said fourth means supplies signals to activate said sense amplifier.
Claim 3
Dependent Claim
39 words
The semiconductor memory device according to claim 1, wherein said second means for supplying selection signals to said capacitor common line transfer gates operates independently from said third means for supplying selection signals to said bit line transfer gates.
Claim 4
Dependent Claim
23 words
The semiconductor memory device according to claim 1, wherein said third means supplies selection signals for independently switching said bit line transfer gates.
Claim 5
Dependent Claim
23 words
The semiconductor memory device according to claim 2, wherein said third means supplies selection signals for independently switching said bit line transfer gates.
Claim 6
Dependent Claim
22 words
The semiconductor memory device according to any one of claims 1 to 4, wherein said sense amplifier is a latch type amplifier.
Claim 7
Dependent Claim
47 words
The semiconductor memory device according to any one of claims 1 to 4, wherein said sense amplifier comprises a differential amplifier and a data writing circuit for setting a rewriting potential to said first and second bit lines based on a sense output of said differential amplifier.
Claim 8
Dependent Claim
107 words
The semiconductor memory device according to claim 1, wherein said semiconductor device includes a plurality of said paired bit lines, a corresponding plurality of capacitor common lines, a corresponding plurality of said capacitor common line transfer gates connected between said capacitor common lines and input nodes of a shared sense amplifier, and a corresponding plurality of said bit line transfer gates connected between said paired bit lines and said input nodes of said shared sense amplifier, and said second means and third means supply selection signals to selectively connect said paired bit lines and said capacitor common lines to said input nodes of said shared sense amplifier.
Claim 9
Dependent Claim
24 words
The semiconductor memory device according to claim 1 further comprising bit line precharging circuitry for precharging said bit pair to a first predetermined potential.
Claim 10
Dependent Claim
26 words
The semiconductor memory device according to claim 1 further comprising capacitor common line precharge circuitry for precharging said capacitor common line to a second predetermined potential.
Claim 11
Dependent Claim
26 words
The semiconductor memory device according to claim 8 further comprising capacitor common line precharge circuitry for precharging said capacitor common line to a second predetermined potential.
Claim 12
Dependent Claim
49 words
The semiconductor memory device according to any one of claims 9 and 10, wherein, prior to data being written to a memory cell, said capacitor common line precharge circuitry is controlled to be in an ON state and said capacitor common line is precharged to said second predetermined potential.
Claim 13
Dependent Claim
33 words
The semiconductor memory device according to claim 10, wherein said first predetermined potential of said bit line precharging circuitry is equal to said second predetermined potential of said capacitor common line precharging circuitry.
Claim 14
Dependent Claim
32 words
The semiconductor memory device according any one of claims 10 and 12, wherein said bit line precharging circuitry and said capacitor common line precharging circuitry are on/off controlled independently of each other.
Claim 15
Dependent Claim
53 words
The semiconductor memory device according to claim 13, wherein, when data is read from a memory cell, said bit line precharging circuitry and said capacitor common line precharging circuitry are controlled to be in an ON state at the same time, and controlled to be in an OFF state at the same time.
Claim 16
Dependent Claim
29 words
The semiconductor memory device according to claim 1, wherein said capacitor common line is formed as a line in a layer which is formed above said paired bit lines.
Claim 17
Dependent Claim
29 words
The semiconductor memory device according to claim 1, wherein said capacitor common line is formed as a line in a layer which is formed below said paired bit lines.
Claim 18
Dependent Claim
85 words
The semiconductor memory device according to claim 1, wherein, when rewriting data to a memory cell, said first means supplies a selection signal to select one of said word lines, subsequently said fourth means supplies signals to activate said sense amplifier, subsequently said third means switches said bit line transfer gates connected to said first and second bit lines ON, subsequently said first means clears a selection signal to one of said word lines, subsequently said fourth means supplies signals to deactivate said sense amplifier.
Claim 19
Dependent Claim
66 words
The semiconductor memory device according to claim 1, wherein, when data is written to the memory cell, said first means supplies a selection signal to select one of said word lines, subsequently said third means switches said bit line transfer gates connected to said first and second bit lines ON, subsequently said first means supplies a selection signal to deselect said one of said word lines.
Claim 20
Dependent Claim
24 words
The semiconductor memory device according to claim 1 wherein said second means supplies selection signals for independently switching said capacitor common line transfer gates.
Claim 21
Dependent Claim
24 words
The semiconductor memory device according to claim 2 wherein said second means supplies selection signals for independently switching said capacitor common line transfer gates.
Claim 22
Dependent Claim
17 words
The semiconductor memory device according to claim 19 wherein said sense amplifier is a latch type amplifier.
Claim 23
Dependent Claim
119 words
The semiconductor memory device according to claim 1, further comprising capacitor common line precharge circuitry for precharging said capacitor common line to a predetermined potential; and wherein, when rewriting data to a memory cell, said first means supplies a selection signal to select one of said word lines, said fourth means subsequently supplies signals to activate said sense amplifier, said capacitor common line precharge circuitry subsequently is controlled to be in an ON state, said third means subsequently switches said bit line transfer gates connected to said first and second bit lines ON, said first means subsequently clears a selection signal to one of said word lines, and said fourth means subsequently supplies signals to deactivate said sense amplifier.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-21 | 1998-05-23 | 1998-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-21 | 2006-05-23 | 2006-11-22 | $7700.00 | Window Closed / Lapsed |