US5374838A
Expired / Lapsed
US
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Semiconductor device having different impurity concentration wells
Assignee: Toshiba Corp
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Filing: 1992-09-24
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Granted: 1994-12-20
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Expires: 2012-09-24
Abstract
Abstract A semiconductor device comprises an N-type semiconductor substrate, a first P-type well formed in the semiconductor substrate, a second P-type well formed adjacent to the first P-type well in the semiconductor substrate, the surface impurity concentration of the second P-type well being set lower than that of the first P-type well, a DRAM memory cell structure formed in the first P-type well, and an MOS transistor structure formed in the second P-type well to function in combination with the memory cell structure.
Inventors
- 👤 Shizuo Sawada
- 👤 Syuso Fujii
- 👤 Masaki Ogihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:44
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/37; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0156; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A semiconductor memory comprising: a P-type substrate; a well region formed in said substrate; a P-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and an N-type region being a third part of said well region, said N-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is not lower than impurity concentrations of said second and said third parts of said well region.
Claim 2
Dependent Claim
100 words
A semiconductor memory comprising: a P-type substrate; a well region formed in said substrate; a P-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and an N-type region being a third part of said well region, said N-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is not lower than impurity concentrations of said second and said third parts of said well region.
Claim 3
Dependent Claim
101 words
A semiconductor memory comprising: a P-type substrate; a well region formed in said substrate; a P-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and a P-type region formed in a third part of said well region, said P-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is not lower than impurity concentrations of said second and said third parts of said well region.
Claim 4
Dependent Claim
101 words
A semiconductor memory comprising: a P-type substrate; a well region formed in said substrate; a P-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and a P-type region formed in a third part of said well region, said P-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is not lower than impurity concentrations of said second and said third parts of said well region.
Claim 5
Dependent Claim
100 words
A semiconductor memory comprising: an N-type substrate; a well region formed in said substrate; an N-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and a P-type region formed in a third part of said well region, said P-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is higher than impurity concentrations of said second and said third parts of said well region.
Claim 6
Dependent Claim
100 words
A semiconductor memory comprising: an N-type substrate; a well region formed in said substrate; an N-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and a P-type region formed in a third part of said well region, said P-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is higher than impurity concentrations of said second and said third parts of said well region.
Claim 7
Dependent Claim
100 words
A semiconductor memory comprising: an N-type substrate; a well region formed in said substrate; an N-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and an N-type region formed in a third part of said well region, said N-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is higher than impurity concentrations of said second and said third parts of said well region.
Claim 8
Dependent Claim
100 words
A semiconductor memory comprising: an N-type substrate; a well region formed in said substrate; an N-type memory cell well, containing a memory cell structure, formed in a first part of said well region; a transistor structure formed in a second part of said well region; and an N-type region formed in a third part of said well region, said N-type region being located between said memory cell well and said transistor structure, wherein an impurity concentration of said first part of said well region is higher than impurity concentrations of said second and said third parts of said well region.
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