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US5380401A
Expired / Lapsed
US
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Method to remove fluorine residues from bond pads
Assignee: Micron Technology Inc
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Filing: 1993-01-14
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Granted: 1995-01-10
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Expires: 2013-01-14
Abstract
Abstract The process of the present invention comprises the addition of an adequate amount of argon gas in a dry etch system to clear bond pads of residual contaminants which form an undesired oxide coating on the bond pads. Carbon dioxide may be used as a carrier gas along with the argon gas. The process of the present invention preferably takes place in situ, following the silicon nitride pad etch in which fluorine-containing chemicals are used to form the bond pads.
Inventors
- 👤 Curtis S. Jones
- 👤 William J. Crane
- 👤 Robin L. Gilchrist
- 👤 Rod C. Langley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:55
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10W; H10W72/00; H10W72/01; H10W72/015; H10W72/01571; H10W72/071; H10W72/075; H10W72/07511
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
68 words
A process for removing fluorine contaminants from an aluminum-containing semiconductor bond pad, said process comprising the following steps: exposing the aluminum-containing bond pad to argon, the aluminum bond pad being exposed to argon in a reactive ion etcher; and applying energy to said argon, a carrier gas being added to said argon, said carrier gas being carbon dioxide, thereby removing the fluorine contaminants from the aluminum-containing bond pad.
Claim 2
Dependent Claim
68 words
A process for removing fluorine contaminants from an aluminum-containing semiconductor bond pad, said process comprising the following steps: exposing the aluminum-containing bond pad to argon, the aluminum bond pad being exposed to argon in a reactive ion etcher; and applying energy to said argon, a carrier gas being added to said argon, said carrier gas being carbon dioxide, thereby removing the fluorine contaminants from the aluminum-containing bond pad.
Claim 3
Dependent Claim
76 words
A process for removing residual fluorine etch chemicals from an aluminum-containing bond pad, said process comprising the following steps of: disposing the aluminum-containing bond pad in a chamber; providing an atmosphere in the chamber; and creating a plasma in the chamber, said plasma comprises an inert gas, said inert gas comprising argon, said plasma further comprises oxygen, said plasma reacting with the residual fluorine chemicals, thereby removing the residual fluorine chemicals from the aluminum-containing bond pad.
Claim 4
Dependent Claim
76 words
A process for removing residual fluorine etch chemicals from an aluminum-containing bond pad, said process comprising the following steps of: disposing the aluminum-containing bond pad in a chamber; providing an atmosphere in the chamber; and creating a plasma in the chamber, said plasma comprises an inert gas, said inert gas comprising argon, said plasma further comprises oxygen, said plasma reacting with the residual fluorine chemicals, thereby removing the residual fluorine chemicals from the aluminum-containing bond pad.
Claim 5
Dependent Claim
24 words
The process according to claim 1, wherein said reactive ion etcher is at 150-900 Watts and 200-600 Torr for 5 seconds to 2 minutes.
Claim 6
Dependent Claim
89 words
A process for removing fluorine contaminants from an aluminum alloy semiconductor bond pad, said process comprising the following steps: exposing the aluminum alloy bond pad to argon, the aluminum alloy bond pad being exposed to argon in a reactive ion etcher, said reactive ion etcher is at 150-900 Watts and 200-600 Torr for 5 seconds to 2 minutes; and applying energy to said argon, a carrier gas being added to said argon, said carrier gas being carbon dioxide, thereby removing the fluorine contaminants from the aluminum alloy bond pad.
Claim 7
Dependent Claim
89 words
A process for removing fluorine contaminants from an aluminum alloy semiconductor bond pad, said process comprising the following steps: exposing the aluminum alloy bond pad to argon, the aluminum alloy bond pad being exposed to argon in a reactive ion etcher, said reactive ion etcher is at 150-900 Watts and 200-600 Torr for 5 seconds to 2 minutes; and applying energy to said argon, a carrier gas being added to said argon, said carrier gas being carbon dioxide, thereby removing the fluorine contaminants from the aluminum alloy bond pad.
Claim 8
Dependent Claim
81 words
A process for removing residual fluorine etch chemicals from an aluminum-containing bond pad, said process comprising the following steps of: disposing the aluminum-containing bond pad in an chamber; providing an atmosphere in the chamber which has a property of removing residual fluorine chemicals from the aluminum-containing bond pad when a plasma is created in said chamber; and applying a plasma in said chamber with said atmosphere, said plasma comprises oxygen, thereby removing the residual fluorine chemicals from the aluminum-containing bond pad.
Claim 9
Dependent Claim
81 words
A process for removing residual fluorine etch chemicals from an aluminum-containing bond pad, said process comprising the following steps of: disposing the aluminum-containing bond pad in an chamber; providing an atmosphere in the chamber which has a property of removing residual fluorine chemicals from the aluminum-containing bond pad when a plasma is created in said chamber; and applying a plasma in said chamber with said atmosphere, said plasma comprises oxygen, thereby removing the residual fluorine chemicals from the aluminum-containing bond pad.
Claim 10
Dependent Claim
17 words
The process according to claim 5, wherein said plasma is created at 150 Watts and 200 MTorr.
Claim 11
Dependent Claim
20 words
The process according to claim 6, wherein the aluminum-containing bond pad is exposed to said plasma for approximately three minutes.
Claim 12
Dependent Claim
21 words
The method according to claim 2, wherein said plasma is created at 200-2500 Watts and 5 mTorr-3 Torr for 5-120 seconds.
Claim 13
Dependent Claim
15 words
The method according to claim 2, wherein said etch chamber is a dry etch chamber.
Claim 14
Dependent Claim
16 words
The method according to claim 2, wherein said etch chamber is a reactive ion etch chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-09 | 1998-07-11 | 1999-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-09 | 2002-07-11 | 2003-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-09 | 2006-07-11 | 2007-01-10 | $7700.00 | Window Closed / Lapsed |