Abstract An inductance element for use in a microwave integrated circuit for processing high-frequency signals ranging from hundreds of MHz to tens of GHz. A conductor wiring in the form of a thin film is formed by sputtering or the like on a semi-insulating compound semiconductor substrate of GaAs for instance. This conductor wiring is about 2-20 μm wide. The intersection between a lead wire from the inner end of the conductor wiring and a spiral coil are insulated by means of an air bridge and the like to form a spiral inductor. A core portion made of high permeability magnetic material is provided in the central portion of the spiral inductor and may be divided into a grid of many small square insulated members. The core portion is directly formed on the substrate by, for instance, sputtering high permeability magnetic material such as nickel. With such an inductance element, the same inductance can be obtained as before but with a miniaturized element.
An inductance element having more than one coil formed by arranging spiral conductor wiring in one plane on a semi-insulating compound semiconductor substrate, wherein only a central portion of the spiral formed by said conductor wiring includes a core portion made of high permeability magnetic material.
Claim 2
Dependent Claim
46 words
An inductance element having more than one coil formed by arranging spiral conductor wiring in one plane on a semi-insulating compound semiconductor substrate, wherein only a central portion of the spiral formed by said conductor wiring includes a core portion made of high permeability magnetic material.
Claim 3
Dependent Claim
24 words
The inductance element as defined in claim 1 wherein said core portion comprises a plurality of small members divided and insulated from each other.
Claim 4
Dependent Claim
18 words
The inductance element as defined in claim 1 wherein said semi-insulating compound semiconductor substrate is a GaAs substrate.
Claim 5
Dependent Claim
18 words
The inductance element as defined in claim 2 wherein said semi-insulating compound semiconductor substrate is a GaAs substrate.
Claim 6
Dependent Claim
16 words
The inductance element as defined in claim 1 wherein said high permeability magnetic material is nickel.
Claim 7
Dependent Claim
16 words
The inductance element as defined in claim 2 wherein said high permeability magnetic material is nickel.