US5406095A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting diode array and production method of the light emitting diode
Assignee: JVCKenwood Corp
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Filing: 1993-08-26
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Granted: 1995-04-11
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Expires: 2013-08-26
Abstract
Abstract An LED (light emitting diode) array of the present invention has a plurality of light emitting diodes aligned in row on a substrate crystal. Each of the light emitting diodes has a double hetero-structure formed by causing a light emitting layer to be interposed between p-type and n-type semi-conductive layers and is isolated with isolating mesa grooves. A reflecting layer is provided between the substrate crystal and one of the p-type and n-type semi-conductive layers. The reflecting layer comprises a plurality of semi-conductive layers having at least different refractive indexes of 2 or more than 2-kinds, each of the semi-conductive layers made of semiconductor having the same polarity as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer. Further, the isolating mesa grooves are provided by a wet etching using an etching liquid of H 3 PO 4 ·H 2 O 2 having volume ratio of H 3 PO 4 : H 2 O 2 =1˜5:1, thus, the LED array having a high integration and a high light emitting output can be successfully produced.
Inventors
- 👤 Yoshihisa Koyama
- 👤 Taku Katayama
- 👤 Katsuhiko Morita
- 👤 Masashi Yoshimura
- 👤 Toshiki Yoshida
- 👤 Manabu Endo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:51
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
154 words
A light emitting diode array comprising: a substrate crystal made of a first conductivity-type semi-conductor; a plurality of light emitting diodes aligned in row on the substrate crystal, each of the light emitting diodes having a light output surface from which a light is emitted outside, and being isolated with isolating mesa grooves, and having a double hetero-structure formed by causing a light emitting layer having a forbidden band width to be interposed between a first semi-conductor layer of said first conductivity-type and a second semi-conductor layer of a second conductivity-type; and a reflecting layer provided between the substrate crystal and one of said first and second semi-conductor layers, the reflecting layer comprising a plurality of semi-conductive layers having 2 or more different refractive indexes, each of the semi-conductive layers having the same conductivity-type as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer.
Claim 2
Dependent Claim
154 words
A light emitting diode array comprising: a substrate crystal made of a first conductivity-type semi-conductor; a plurality of light emitting diodes aligned in row on the substrate crystal, each of the light emitting diodes having a light output surface from which a light is emitted outside, and being isolated with isolating mesa grooves, and having a double hetero-structure formed by causing a light emitting layer having a forbidden band width to be interposed between a first semi-conductor layer of said first conductivity-type and a second semi-conductor layer of a second conductivity-type; and a reflecting layer provided between the substrate crystal and one of said first and second semi-conductor layers, the reflecting layer comprising a plurality of semi-conductive layers having 2 or more different refractive indexes, each of the semi-conductive layers having the same conductivity-type as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer.
Claim 3
Dependent Claim
27 words
A light emitting diode array as claimed in claim 1, wherein a thickness of the double hetero-structure of the light emitting diode is less than 20 μm.
Claim 4
Dependent Claim
45 words
A light emitting diode array as claimed in claim 1, wherein a reflection preventing layer is provided on the light output surface, the reflection preventing layer having a maximum transmittance in accordance with a center wavelength of the light emitted from the light emitting layer.
Claim 5
Dependent Claim
76 words
A light emitting diode array as claimed in claim 3, wherein the reflection preventing layer comprises a plurality of semi-conductive layers having different kinds of refractive indexes, one of the plurality of the semi-conductive layers having a thickness d defined as d=(2m-1)·λp/ (4·n) wherein m: a positive integer, λp: a center wavelength of a light emitted from the light emitting layer, and n: the refractive index of the one of the plurality of the semi-conductive layer.
Claim 6
Dependent Claim
80 words
A light emitting diode array as claimed in claim 1, wherein the other of said first and second semi-conductor layers of the double hetero-structure which is provided between the light emitting surface and the light emitting layer, comprises a plurality of semi-conductive layers having different conductivities, at least one of the plurality of semi-conductive layers which are provided on the side of the light emitting surface having a higher conductivity than those of remainders of the plurality of semi-conductive layers.
Claim 7
Dependent Claim
63 words
A light emitting diode array as claimed in claim 1, wherein the reflecting layer is made of a multiplexed reflecting multilayer having a plurality of reflecting multilayers each having a different reflective center wavelength, each of the plurality of the multilayers being formed in such a manner that a plurality of semi-conductive layers having 2 or more different refractive indexes are stacked alternately.
Claim 8
Dependent Claim
28 words
A light emitting diode array as claimed in claim 6, wherein respective semi-conductor layers of the same refractive index have different thicknesses among said plurality of reflecting multilayers.
Claim 9
Dependent Claim
48 words
A light emitting diode array as claimed in claim 1, further comprising parallel grooves extended in parallel with a direction of the light emitting diodes aligned in row, the parallel grooves being defined as positive-type mesa grooves, and the isolating mesa grooves being defined as positive-type mesa grooves.
Claim 10
Dependent Claim
99 words
A light emitting diode array as claimed in claim 1, further comprising parallel grooves provided in parallel with a direction of the light emitting diodes aligned in row, the parallel grooves being define as positive-type mesa grooves, and each of the isolating mesa grooves comprising a positive-type groove defined from the top of the light output surface of the light emitting diode array to a p-n junction plane formed between the one of said first and second semi-conductor layers and the light emitting layer, and a negative-type mesa grooves defined in a deeper portion than the p-n junction plane.
Claim 11
Dependent Claim
56 words
A light emitting diode array as claimed in claim 1, further comprising parallel grooves provided in parallel with a direction of the light emitting diodes aligned in row, the parallel grooves being defined as positive-type mesa grooves, and each of the isolating mesa grooves having perpendicular walls perpendicular to an upper surface of the substrate crystal.
References Cited (Backward Citations)
JPS592382A
Cited
JPS6161458A
Cited
JPS6216583A
Cited
JPH01200678A
Cited
JPH0220076A
Cited
US5260589A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |