US5408191A
Expired / Lapsed
US
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Input buffer having a compensation circuit for stabilizing the output thereof
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-10-29
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Granted: 1995-04-18
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Expires: 2013-10-29
Abstract
Abstract An input buffer particularly suitable for a semiconductor device includes a CMOS inverter for buffering an input signal which varies between first and second logic levels and producing an output signal at an output node thereof which is the logical inverse of the input signal, and a compensation circuit for compensating the output signal for fluctuations thereof which are due to fluctuations of a supply voltage. The CMOS inverter preferably includes a pull-up MOS transistor having a gate, a first electrode coupled to a supply voltage, and a second electrode, and a pull-down MOS transistor having a gate, a first electrode coupled to a reference voltage, and a second electrode. The compensation circuit preferably includes a compensation MOS transistor having a gate, a first electrode coupled to the second electrode of the pull-up MOS transistor, and a second electrode coupled to the second electrode of the pull-down MOS transistor, with the output node being located intermediate the second electrode of the compensation MOS transistor and the second electrode of the pull-down MOS transistor. The compensation circuit further includes a compensation control circuit coupled to the supply voltage for controllably varying the electrical resistance of the channel of the compensation MOS transistor in such a manner as to minimize fluctuations of the voltage level of the output signal due to fluctuations of the supply voltage.
Inventors
- 👤 Sung-jin Han
- 👤 Chung-keun Kwak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 04:31
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/0948; H03K19/003; H03K19/00369; H03K19/00384
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
363 words
An input buffer, comprising: a pull-up MOS transistor having a gate, a first electrode coupled to a supply voltage, and a second electrode; a pull-down MOS transistor having a gate, a first electrode coupled to a reference voltage, and a second electrode; a compensation MOS transistor having a gate, a first electrode coupled to said second electrode of said pull-up MOS transistor, and a second electrode coupled to said second electrode of said pull-down MOS transistor; wherein said gate of said pull-up MOS transistor and said gate of said pull-down MOS transistor are commonly coupled to an input signal which varies between first and second logic levels; an output node between said second electrode of said compensation MOS transistor and said second electrode of said pull-down MOS transistor, wherein a buffer output signal produced at said output node is the logical inverse of said input signal; a compensation control circuit coupled to said supply voltage for controllably varying the electrical resistance of the channel of said compensation MOS transistor in such a manner as to minimize fluctuations of the voltage level of said output signal due to fluctuations of said supply voltage, wherein said compensation control circuit comprises: a first MOS transistor having a first electrode coupled to said supply voltage, a second electrode, and a gate coupled to an enable signal; a second MOS transistor having a first electrode coupled to said second electrode of said first MOS transistor, a second electrode, and a gate commonly coupled to said gate of said compensation MOS transistor and said second electrode of said second MOS transistor, wherein said first and second MOS transistors are of the same conductivity type; a reference MOS transistor having a first electrode coupled to said second electrode of said second MOS transistor, a second electrode coupled to said reference voltage, and a gate coupled to said supply voltage, wherein said reference MOS transistor is of a conductivity type opposite that of said first and second MOS transistors; and, wherein a node intermediate said first electrode of said reference MOS transistor and said second electrode of said second MOS transistor is coupled to said gate of said compensation MOS transistor.
Claim 2
Dependent Claim
363 words
An input buffer, comprising: a pull-up MOS transistor having a gate, a first electrode coupled to a supply voltage, and a second electrode; a pull-down MOS transistor having a gate, a first electrode coupled to a reference voltage, and a second electrode; a compensation MOS transistor having a gate, a first electrode coupled to said second electrode of said pull-up MOS transistor, and a second electrode coupled to said second electrode of said pull-down MOS transistor; wherein said gate of said pull-up MOS transistor and said gate of said pull-down MOS transistor are commonly coupled to an input signal which varies between first and second logic levels; an output node between said second electrode of said compensation MOS transistor and said second electrode of said pull-down MOS transistor, wherein a buffer output signal produced at said output node is the logical inverse of said input signal; a compensation control circuit coupled to said supply voltage for controllably varying the electrical resistance of the channel of said compensation MOS transistor in such a manner as to minimize fluctuations of the voltage level of said output signal due to fluctuations of said supply voltage, wherein said compensation control circuit comprises: a first MOS transistor having a first electrode coupled to said supply voltage, a second electrode, and a gate coupled to an enable signal; a second MOS transistor having a first electrode coupled to said second electrode of said first MOS transistor, a second electrode, and a gate commonly coupled to said gate of said compensation MOS transistor and said second electrode of said second MOS transistor, wherein said first and second MOS transistors are of the same conductivity type; a reference MOS transistor having a first electrode coupled to said second electrode of said second MOS transistor, a second electrode coupled to said reference voltage, and a gate coupled to said supply voltage, wherein said reference MOS transistor is of a conductivity type opposite that of said first and second MOS transistors; and, wherein a node intermediate said first electrode of said reference MOS transistor and said second electrode of said second MOS transistor is coupled to said gate of said compensation MOS transistor.
Claim 3
Dependent Claim
51 words
The input buffer as set forth in claim 1, further comprising an enable MOS transistor connected in series between said first electrode of said pull-up MOS transistor and said supply voltage, said enable MOS transistor having a gate coupled to an enable signal which varies between first and second logic levels.
Claim 4
Dependent Claim
42 words
The input buffer as set forth in claim 2, further comprising an output node pull-down MOS transistor having a first electrode coupled to said output node, a second electrode coupled to said reference voltage, and a gate coupled to said enable signal.
Claim 5
Dependent Claim
24 words
The input buffer as set forth in claim 3, wherein said pull-up MOS transistor and said pull-down MOS transistor are of opposite conductivity types.
Claim 6
Dependent Claim
27 words
The input buffer as set forth in claim 4, wherein said pull-up MOS transistor is a PMOS transistor and said pull-down MOS transistor is an NMOS transistor.
Claim 7
Dependent Claim
18 words
The input buffer as set forth in claim 5, wherein said compensation MOS transistor is a PMOS transistor.
Claim 8
Dependent Claim
18 words
The input buffer as set forth in claim 6, wherein said enable MOS transistor is a PMOS transistor.
Claim 9
Dependent Claim
20 words
The input buffer as set forth in claim 7, wherein said output node pull-down MOS transistor is an NMOS transistor.
Claim 10
Dependent Claim
65 words
The input buffer as set forth in claim 1, wherein said compensation control circuit further comprises third and fourth PMOS transistors connected in series between said second electrode of said first PMOS transistor and said first electrode of said second PMOS transistor, and wherein further, the gate and drain electrode of each of said third and fourth PMOS transistors are commonly connected to each other.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
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| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |