Abstract A nonvolatile memory device wherein the detection output of a comparator detector remains stable without oscillating even when the output of a sense amplifier enters an Insensitive zone which is a detection disable region of the comparator detector. The nonvolatile semiconductor memory device includes a comparator detector for comparing the output of a sense amplifier with a reference value, a coincidence detection circuit for detecting that erasure of a memory cell has been completed, and a low-pass filter interposed between the output of the comparator detector and an input of the coincidence detection circuit. By selection of a suitable time constant of the low-pass filter, oscillation waveforms of the output of the comparator detector can be prevented from being transmitted to the coincidence detection circuit, and completion of erasure can be detected accurately by the coincidence detection circuit.
A nonvolatile semiconductor memory device, comprising: an electrically reloadable nonvolatile semiconductor memory element; sense amplifier means for reading and amplifying stored information of said memory element; comparison means for comparing an output level of said sense amplifier means with a reference level; low-pass filter means for receiving a comparison output of said comparison means as an input thereto; and coincidence detection means for comparing a filter output of said low-pass filter means with a predetermined logic value to detect a coincidence condition between them to detect a storage condition of information of said nonvolatile semiconductor memory element.
Claim 2
Dependent Claim
97 words
A nonvolatile semiconductor memory device, comprising: an electrically reloadable nonvolatile semiconductor memory element; sense amplifier means for reading and amplifying stored information of said memory element; comparison means for comparing an output level of said sense amplifier means with a reference level; low-pass filter means for receiving a comparison output of said comparison means as an input thereto; and coincidence detection means for comparing a filter output of said low-pass filter means with a predetermined logic value to detect a coincidence condition between them to detect a storage condition of information of said nonvolatile semiconductor memory element.
Claim 3
Dependent Claim
33 words
A nonvolatile semiconductor memory device as claimed in claim 1, further comprising buffer means for leading out the output of said low-pass filter means to the outside of said nonvolatile semiconductor memory device.
Claim 4
Dependent Claim
33 words
A nonvolatile semiconductor memory device as claimed In claim 1, wherein said low-pass filter means includes a delay circuit for delaying a variation of the comparison output of said comparison means inputted thereto.
Claim 5
Dependent Claim
60 words
A nonvolatile semiconductor memory device as claimed in claim 3, wherein said delay circuit includes a first inverter for receiving the comparison output of said comparison means as an Input thereto, a second inverter for receiving an output of said first inverter as an input thereto, and a capacitor provided at each of outputs of said first and second inverters.
Claim 6
Dependent Claim
39 words
A nonvolatile semiconductor memory device as claimed in claim 3, wherein said delay circuit is a time constant circuit which receives the comparison output of said comparison means as an input thereto and includes a resistor and a capacitor.