US5425846A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Removal of substrate perimeter material
Assignee: AT&T Inc
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Filing: 1993-08-09
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Granted: 1995-06-20
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Expires: 2013-08-09
Abstract
Abstract Perimeter material is removed from substrates by stacking the substrates and subjecting them to a plasma etch. In an exemplary application, the perimeter of a silicon wafer dielectric cap (typically silicon nitride) is removed by stacking the wafers in intimate contact, and etching the wafers in a barrel etcher. A well-controlled removal of the cap perimeter is obtained, allowing for a smooth epitaxial deposition at the water edge in a subsequent operation. An additional benefit is smoothing of the substrate edge contour, which reduces scratching of wafer cassettes and other handling equipment.
Inventors
- 👤 Jeffrey T. Koze
- 👤 Drew J. Kuhn
- 👤 John D. LaBarre
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:36
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
92 words
A method of removing a layer of material from the perimeter of a first substrate having a broad surface of a given size, Characterized in that said removing is accomplished by steps comprising: placing said broad surface of said first substrate in contact with the broad surface of a second substrate of said given size, and exposing the first and second substrates to a gaseous etching atmosphere until said layer of material is removed from said perimeter, wherein said layer of material is a strip of material found on said broad surface.
Claim 2
Independent Claim
92 words
A method of removing a layer of material from the perimeter of a first substrate having a broad surface of a given size, Characterized in that said removing is accomplished by steps comprising: placing said broad surface of said first substrate in contact with the broad surface of a second substrate of said given size, and exposing the first and second substrates to a gaseous etching atmosphere until said layer of material is removed from said perimeter, wherein said layer of material is a strip of material found on said broad surface.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said first substrate is a semiconductor wafer.
Claim 4
Dependent Claim
28 words
The method of claim 2 wherein said layer of material that is removed is a strip of dielectric material formed on said broad surface of said semiconductor wafer.
Claim 5
Dependent Claim
28 words
The method of claim 2 wherein said layer of material that is removed is semiconductor material from the edge of said semiconductor wafer, whereby the edge is smoothed.
Claim 6
Independent Claim
117 words
A method of making a semiconductor wafer by steps comprising: forming a cap layer of dielectric material on the back side of a first semiconductor wafer, removing a perimeter strip of said dielectric material from said back side of said first wafer, and thereafter epitaxially forming a semiconductor layer on the front side, and on the perimeter strip on said back side, of said first wafer, Characterized in that said removing is accomplished by steps comprising: placing said back side of said first wafer in contact with a given side of a second wafer, and exposing said first and second wafers to an etching atmosphere until the desired layer of material is removed from said perimeter strip.
Claim 7
Independent Claim
117 words
A method of making a semiconductor wafer by steps comprising: forming a cap layer of dielectric material on the back side of a first semiconductor wafer, removing a perimeter strip of said dielectric material from said back side of said first wafer, and thereafter epitaxially forming a semiconductor layer on the front side, and on the perimeter strip on said back side, of said first wafer, Characterized in that said removing is accomplished by steps comprising: placing said back side of said first wafer in contact with a given side of a second wafer, and exposing said first and second wafers to an etching atmosphere until the desired layer of material is removed from said perimeter strip.
Claim 8
Dependent Claim
73 words
The method of claim 5 wherein a cap layer of dielectric material is also formed on the back side of said second wafer prior to said removing, and wherein a perimeter strip of said dielectric material is also removed from said back side of said second wafer, and wherein a semiconductor layer is also epitaxially formed on the front side, and on the perimeter strip on said back side, of said second wafer.
Claim 9
Dependent Claim
26 words
The method of claim 6 wherein said back side of said second wafer is the given side that is placed in contact with said first wafer.
Claim 10
Dependent Claim
26 words
The method of claim 6 wherein the front side of said second wafer is the given side that is placed in contact with said first wafer.
Claim 11
Dependent Claim
13 words
The method of claim 6 wherein said semiconductor wafer is a silicon wafer.
Claim 12
Dependent Claim
17 words
The method of claim 9 wherein said semiconductor layer that is epitaxially formed is a silicon layer.
Claim 13
Dependent Claim
28 words
The method of claim 10 wherein said cap layer of dielectric material comprises at least one dielectric selected from the group consisting of silicon dioxide and silicon nitride.
Claim 14
Dependent Claim
21 words
The method of claim 11 wherein said perimeter strip has a width in the range of from 1 to 10 millimeters.
Claim 15
Dependent Claim
32 words
The method of claim 5 further comprising the step of clamping said wafer in a lithographic apparatus and performing a lithographic operation on said wafer to define features of an integrated circuit.
Claim 16
Independent Claim
118 words
A method of making an integrated circuit by steps comprising clamping a first semiconductor wafer in a lithographic device and performing a lithographic operation to define features on a front side of the wafer having an epitaxial layer formed thereon; and with said first wafer having a dielectric cap layer formed on the back side, from which a perimeter strip has been removed, Characterized in that the removing of said perimeter strip is accomplished by steps comprising: placing said back side of said first wafer in contact with a given side of a second wafer, and exposing said first and second wafers to an etching atmosphere until the desired layer of material is removed from said perimeter strip.
Claim 17
Independent Claim
118 words
A method of making an integrated circuit by steps comprising clamping a first semiconductor wafer in a lithographic device and performing a lithographic operation to define features on a front side of the wafer having an epitaxial layer formed thereon; and with said first wafer having a dielectric cap layer formed on the back side, from which a perimeter strip has been removed, Characterized in that the removing of said perimeter strip is accomplished by steps comprising: placing said back side of said first wafer in contact with a given side of a second wafer, and exposing said first and second wafers to an etching atmosphere until the desired layer of material is removed from said perimeter strip.
Claim 18
Dependent Claim
30 words
The method of claim 14 wherein said second wafer has an epitaxial layer formed on the front side, and a cap layer of dielectric material formed on the back side.
Claim 19
Dependent Claim
26 words
The method of claim 15 wherein said back side of said second wafer is the given side that is placed in contact with said first wafer.
Claim 20
Dependent Claim
26 words
The method of claim 15 wherein the front side of said second wafer is the given side that is placed in contact with said first wafer.
Claim 21
Dependent Claim
13 words
The method of claim 15 wherein said semiconductor wafer is a silicon wafer.
Claim 22
Dependent Claim
17 words
The method of claim 18 wherein said semiconductor layer that is epitaxially formed is a silicon layer.
Claim 23
Dependent Claim
28 words
The method of claim 19 wherein said cap layer of dielectric material comprises at least one dielectric selected from the group consisting of silicon dioxide and silicon nitride.
Claim 24
Dependent Claim
21 words
The method of claim 20 wherein said perimeter strip has a width in the range of from 1 to 10 millimeters.
Claim 25
Dependent Claim
13 words
The method of claim 1 wherein said gaseous etching atmosphere is a plasma.
Claim 26
Dependent Claim
12 words
The method of claim 5 wherein said etching atmosphere is a plasma.
Claim 27
Dependent Claim
12 words
The method of claim 14 wherein said etching atmosphere is a plasma.
Claim 28
Dependent Claim
23 words
The method of claim 5 wherein said first wafer has a diameter that is essentially equal to the diameter of said second water.
Claim 29
Dependent Claim
23 words
The method of claim 14 wherein said first wafer has a diameter that is essentially equal to the diameter of said second wafer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-19 | 1998-12-19 | 1999-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-19 | 2002-12-19 | 2003-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-19 | 2006-12-19 | 2007-06-20 | $7700.00 | Window Closed / Lapsed |