US5433650A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for polishing a substrate
Assignee: Motorola Solutions Inc
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Filing: 1993-05-03
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Granted: 1995-07-18
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Expires: 2013-05-03
Abstract
Abstract A semiconductor substrate (48) and a block of optical quartz (50) are simultaneously polished. An interferometer (22), in conjunction with a data processing system (16), are then used to monitor the thickness and the polishing rate of the optical quartz block. This allows the endpoint of the polishing process to be automatically and reproducibly detected, and it also allows the polishing rate of the semiconductor substrate (48) to be automatically adjusted during the polishing process.
Inventors
- 👤 Paul Winebarger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:21
CPC Classifications
H; H10; H10P; H10P52/00; H10P52/40; H10P52/402; B; B24; B24B; B24B37/00; B24B37/005; B24B37/013; B24B37/04; B24B53/00; B24B53/017; H10P52/403; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
124 words
A method for polishing a substrate comprising the steps of: providing the substrate; providing a means for polishing, said means for polishing having a polishing surface, a first carrier, and a second carrier, the second carrier having a disposable polishing material mounted thereon; mounting the substrate to the first carrier; placing the substrate, which is mounted to the first carrier, and the disposable polishing material, which is mounted to the second carrier, in contact with the polishing surface; polishing the substrate and the disposable polishing material; monitoring the thickness of the disposable polishing material with an interferometer, while the first carrier remains directly over the polishing surface; and terminating the polishing step after a selected thickness of the disposable polishing material has been removed.
Claim 2
Independent Claim
124 words
A method for polishing a substrate comprising the steps of: providing the substrate; providing a means for polishing, said means for polishing having a polishing surface, a first carrier, and a second carrier, the second carrier having a disposable polishing material mounted thereon; mounting the substrate to the first carrier; placing the substrate, which is mounted to the first carrier, and the disposable polishing material, which is mounted to the second carrier, in contact with the polishing surface; polishing the substrate and the disposable polishing material; monitoring the thickness of the disposable polishing material with an interferometer, while the first carrier remains directly over the polishing surface; and terminating the polishing step after a selected thickness of the disposable polishing material has been removed.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein the step of providing the means for polishing, the disposable polishing material is further characterized as a transmissive material.
Claim 4
Dependent Claim
23 words
The method of claim 2 wherein the step of providing the means for polishing, the transmissive material is further characterized as optical quartz.
Claim 5
Dependent Claim
29 words
The method of claim 1 wherein the step of monitoring the thickness of the disposable material comprises: monitoring the thickness of the disposable polishing material using a laser interferometer.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein the step of providing the substrate comprises: providing a semiconductor substrate.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein the step of polishing the substrate comprises: polishing a semiconductor substrate to form a planarized interlevel dielectric layer.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the step of polishing the substrate comprises: polishing a semiconductor substrate to form trench isolation.
Claim 9
Independent Claim
134 words
A method for polishing a substrate, the substrate having a polishing rate, the method comprising the steps of: providing the substrate; providing a means for polishing, said means for polishing having a polishing surface, a first carrier, and a second carrier, the second carrier having a disposable polishing material mounted thereon; mounting the substrate to the first carrier; placing the substrate, which is mounted to the first carrier, and the disposable polishing material, which is mounted to the second carrier, in contact with the polishing surface, the substrate contacting the polishing surface with a selected force; polishing said substrate and the disposable polishing material, monitoring the polishing rate of the disposable polishing material with an interferometer, while the first carrier remains directly over the polishing surface; and adjusting the polishing rate of the substrate.
Claim 10
Independent Claim
134 words
A method for polishing a substrate, the substrate having a polishing rate, the method comprising the steps of: providing the substrate; providing a means for polishing, said means for polishing having a polishing surface, a first carrier, and a second carrier, the second carrier having a disposable polishing material mounted thereon; mounting the substrate to the first carrier; placing the substrate, which is mounted to the first carrier, and the disposable polishing material, which is mounted to the second carrier, in contact with the polishing surface, the substrate contacting the polishing surface with a selected force; polishing said substrate and the disposable polishing material, monitoring the polishing rate of the disposable polishing material with an interferometer, while the first carrier remains directly over the polishing surface; and adjusting the polishing rate of the substrate.
Claim 11
Dependent Claim
25 words
The method of claim 8 wherein the step of providing the means for polishing, the disposable polishing material is further characterized as a transmissive material.
Claim 12
Dependent Claim
23 words
The method of claim 9 wherein the step of providing the means for polishing, the transmissive material is further characterized as optical quartz.
Claim 13
Dependent Claim
32 words
The method of claim 8 wherein the step of monitoring the polishing rate of the disposable polishing material comprises: monitoring the polishing rate of the disposable polishing material using a laser interferometer.
Claim 14
Dependent Claim
17 words
The method of claim 8 wherein the step of providing the substrate comprises: providing a semiconductor substrate.
Claim 15
Dependent Claim
53 words
The method of claim 8 wherein the step of adjusting the polishing rate of the substrate comprises: adjusting the polishing rate of the substrate by a means selected from the group consisting of: conditioning the polishing surface, dispensing a slurry on the polishing surface, adjusting a rotational speed, and adjusting the selected force.
Claim 16
Dependent Claim
24 words
The method of claim 8 wherein the step of polishing the substrate comprises: polishing a semiconductor substrate to form a planarized interlevel dielectric layer.
Claim 17
Dependent Claim
21 words
The method of claim 8 wherein the step of polishing the substrate comprises: polishing a semiconductor substrate to form trench isolation.
Claim 18
Independent Claim
128 words
A method for polishing a semiconductor substrate comprising the steps of: providing the semiconductor substrate; providing a means for polishing, said means for polishing having a polishing surface, a first carrier, and a second carrier, the second carrier having disposable polishing material mounted thereon; mounting the semiconductor substrate to the first carrier; placing the semiconductor substrate, which is mounted on the first carrier, and the disposable polishing material which is mounted on the second carrier, in contact with the polishing surface; polishing said semiconductor substrate and the disposable polishing material; monitoring the thickness of the disposable polishing material with an interferometer, while the first carrier remains directly over the polishing surface; and terminating the polishing step after a selected thickness of the disposable polishing material has been removed.
Claim 19
Independent Claim
128 words
A method for polishing a semiconductor substrate comprising the steps of: providing the semiconductor substrate; providing a means for polishing, said means for polishing having a polishing surface, a first carrier, and a second carrier, the second carrier having disposable polishing material mounted thereon; mounting the semiconductor substrate to the first carrier; placing the semiconductor substrate, which is mounted on the first carrier, and the disposable polishing material which is mounted on the second carrier, in contact with the polishing surface; polishing said semiconductor substrate and the disposable polishing material; monitoring the thickness of the disposable polishing material with an interferometer, while the first carrier remains directly over the polishing surface; and terminating the polishing step after a selected thickness of the disposable polishing material has been removed.
Claim 20
Dependent Claim
25 words
The method of claim 16 wherein the step of polishing the semiconductor substrate comprises: polishing the semiconductor substrate to form a planarized interlevel dielectric layer.
Claim 21
Dependent Claim
22 words
The method of claim 16 wherein the step of polishing the semiconductor substrate comprises: polishing the semiconductor substrate to form trench isolation.
Claim 22
Dependent Claim
25 words
The method of claim 16 wherein the step of polishing the semiconductor substrate comprises: polishing the semiconductor substrate to form a silicon on insulator substrate.
Claim 23
Dependent Claim
24 words
The method of claim 16 wherein the step of polishing the semiconductor substrate comprises: polishing the semiconductor substrate to form a planarized electrical interconnect.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-17 | 1999-01-16 | 1999-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-17 | 2003-01-16 | 2003-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-17 | 2007-01-16 | 2007-07-18 | $7700.00 | Window Closed / Lapsed |