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US5434432A Expired / Lapsed US ⏱️ 0.0 years remaining

Antifuse device for controlling current in a circuit using an antifuse

Assignee: Texas Instruments Inc
•
Filing: 1993-12-03
•
Granted: 1995-07-18
•
Expires: 2013-12-03
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Abstract

Abstract A device (10) for controlling current through a circuit has an antifuse material (18) separating a first conductor (12) and a second conductor (20). An insulating element (14) and another insulating element (16) further separate the first conductor (12) from the second conductor (20). The antifuse material (18) includes a dopant which raises the band gap and seals off paths in grain boundaries of the antifuse material (18) in order to limit leakage current from flowing between the first conductor (12) and the second conductor (20). When an interconnection is desired, a high voltage pulse is applied across the first conductor (12) and the second conductor (20) to initially break down the antifuse material (18). The breakdown of the antifuse material (18) causes a filament (22) to form between the first conductor (12) and the second conductor (20). The filament (22) creates a conduction path connecting the first conductor (12) and the second conductor (20) electrically together. Additional current is forced through the antifuse material (18) to permanently set the filament (22) in order to interconnect circuit elements coupled to the first conductor (12) and the second conductor (20).

Inventors

  • 👤 David B. Spratt
  • 👤 Kueing-Long Chen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 20:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S148/00; Y10S148/055

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 24 words
A device for controlling current in a circuit, comprising: an antifuse material consisting essentially of hydrogenated microcrystalline silicon carbide (μC-SiC:H) formed between two conductors.
Claim 2
Independent Claim 24 words
A device for controlling current in a circuit, comprising: an antifuse material consisting essentially of hydrogenated microcrystalline silicon carbide (μC-SiC:H) formed between two conductors.
Claim 3
Independent Claim 44 words
A device for controlling a current path within a circuit comprising: a first conduction element; a second conduction element; and an antifuse material separating said first conduction element from said second conduction element, said antifuse material consisting essentially of hydrogenated microcrystalline silicon carbide (μC-SiC:H).
Claim 4
Independent Claim 44 words
A device for controlling a current path within a circuit comprising: a first conduction element; a second conduction element; and an antifuse material separating said first conduction element from said second conduction element, said antifuse material consisting essentially of hydrogenated microcrystalline silicon carbide (μC-SiC:H).
Claim 5
Dependent Claim 20 words
The device of claim 2, further comprising: an insulating material between said first conduction element and said second conduction element.
Claim 6
Dependent Claim 27 words
The device in accordance with claim 2 further comprising a filament within said antifuse material to allow current to flow between said first and second conduction elements.
Claim 7
Dependent Claim 23 words
The device of claim 4, wherein said filament is formed by applying a high voltage pulse across said first and second conduction elements.
Claim 8
Dependent Claim 46 words
An electrically conductive path between two spaced-apart conductors comprising: an antifuse in contact with said two conductors, said antifuse consisting essentially of hydrogenated microcrystalline silicon carbide (μC-SiC:H), said antifuse having been broken down by the application of a voltage pulse between said first and second conductors.
Claim 9
Dependent Claim 46 words
An electrically conductive path between two spaced-apart conductors comprising: an antifuse in contact with said two conductors, said antifuse consisting essentially of hydrogenated microcrystalline silicon carbide (μC-SiC:H), said antifuse having been broken down by the application of a voltage pulse between said first and second conductors.
Claim 10
Dependent Claim 27 words
The electrically conductive path in accordance with claim 6 wherein current has been forced through said antifuse to establish a permanent electrically conductive path between said conductors.

References Cited (Backward Citations)

US4499557A Cited
US4748490A Cited
US5093711A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-07-17 1999-01-16 1999-07-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-07-17 2003-01-16 2003-07-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-07-17 2007-01-16 2007-07-18 $7700.00 Window Closed / Lapsed

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