US5442198A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-single crystal semiconductor device with sub-micron grain size
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-01-31
•
Granted: 1995-08-15
•
Expires: 2014-01-31
Abstract
Abstract A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 ANGSTROM -8000 ANGSTROM , and said film thickness is 500 ANGSTROM -2000 ANGSTROM . The density of oxygen in the semiconductor film (2') is less than 2x1019/cm3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.
Inventors
- 👤 Michio Arai
- 👤 Masaaki Ikeda
- 👤 Kazushi Sugiura
- 👤 Nobuo Furukawa
- 👤 Mitsufumi Kodama
- 👤 Yukio Yamauchi
- 👤 Naoya Sakamoto
- 👤 Takeshi Fukada
- 👤 Masaaki Hiroki
- 👤 Ichirou Takayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 02:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H04; H04N; H04N1/00; H04N1/024; H04N1/028; H04N1/03; H04N1/031; H04N1/0313; H04N1/0315; H04N1/0316; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S257/00; Y10S257/905
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
83 words
A non single crystal semiconductor device comprising; a substrate, a non single crystal silicon semiconductor film placed on said substrate said film having a thickness in the range 500 Å to 2000 Å, and crystal grains in said film having an average diameter in the range 250 Å to 8000 Å, and an oxygen density in said film of less than 2×10 19 /cm 3 , and at least one MOS transistor formed on said film and including doped regions in said film.
Claim 2
Dependent Claim
83 words
A non single crystal semiconductor device comprising; a substrate, a non single crystal silicon semiconductor film placed on said substrate said film having a thickness in the range 500 Å to 2000 Å, and crystal grains in said film having an average diameter in the range 250 Å to 8000 Å, and an oxygen density in said film of less than 2×10 19 /cm 3 , and at least one MOS transistor formed on said film and including doped regions in said film.
Claim 3
Dependent Claim
26 words
A non single crystal semiconductor device according to claim 1, further comprising a photo sensor having a PIN structure semiconductor film deposited adjacent to said transistor.
Claim 4
Dependent Claim
17 words
A non single crystal semiconductor device according to claim 2, wherein said substrate is made of glass.
Claim 5
Dependent Claim
17 words
A non single crystal semiconductor device according to claim 1, wherein said substrate is made of glass.
Claim 6
Dependent Claim
35 words
A non single crystal semiconductor device according to claim 1, wherein said average diameter of a crystal in said film is in the range between half and 4 times the thickness of said semiconductor film.
Claim 7
Dependent Claim
85 words
An insulated gate field effect transistor formed on a substrate, said transistor comprising at least a non single crystalline silicon semiconductor film and a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween, wherein said semiconductor film has thickness in the range 500 Å to 2000 Å, and crystal grains in said film have an average diameter in the range 250 Å to 8000 Å, and an oxygen density in said film of less than 2×19 19 atoms/cm 3 .
Claim 8
Dependent Claim
85 words
An insulated gate field effect transistor formed on a substrate, said transistor comprising at least a non single crystalline silicon semiconductor film and a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween, wherein said semiconductor film has thickness in the range 500 Å to 2000 Å, and crystal grains in said film have an average diameter in the range 250 Å to 8000 Å, and an oxygen density in said film of less than 2×19 19 atoms/cm 3 .
Claim 9
Dependent Claim
29 words
A transistor according to claim 6, wherein the average diameter of said crystal grains is in the range between half and 4 times the thickness of said semiconductor film.
References Cited (Backward Citations)
US4176372A
Cited
US4062034A
Cited
US4363828A
Cited
US4727044A
Cited
JPS6193663A
Cited
US4693759A
Cited
US4901133A
Cited
US4814292A
Cited
US4992846A
Cited
EP0310702A1
Cited
EP0383230A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-14 | 1999-02-13 | 1999-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-14 | 2003-02-13 | 2003-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-14 | 2007-02-13 | 2007-08-15 | $7700.00 | Window Closed / Lapsed |