Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of semiconductor material

Claim 1

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal representing to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information.

Claim 2

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal representing to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information.

Claim 4

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrodes, c. providing a signal representing to the capacitance between the two electrodes, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light varying in intensity over a predetermined range, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. the intensity range of the light beam being such that the capacitance between the two electrodes is measurably changed as the light intensity changes, g. providing information corresponding to the doping concentration, h. providing a signal corresponding to the illumination intensity of the beam of light, and then i. determining the surface minority carrier recombination time constant (t s ) using said signal information so provided.

Claim 5

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrodes, c. providing a signal representing to the capacitance between the two electrodes, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light varying in intensity over a predetermined range, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. the intensity range of the light beam being such that the capacitance between the two electrodes is measurably changed as the light intensity changes, g. providing information corresponding to the doping concentration, h. providing a signal corresponding to the illumination intensity of the beam of light, and then i. determining the surface minority carrier recombination time constant (t s ) using said signal information so provided.

Claim 6

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal representing to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photovoltage at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photovoltage is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information.

Claim 7

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal representing to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photovoltage at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photovoltage is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information.

Claim 8

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal corresponding to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of bolos, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion and being determined using the equation: Q.sub.induced =V.sub.g * C.sub.p f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information.

Claim 9

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal corresponding to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of bolos, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion and being determined using the equation: Q.sub.induced =V.sub.g * C.sub.p f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information.

Claim 11

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal corresponding to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information and the equation: ##EQU19## where: q: Electron charge ε s : Dielectric constant of the semiconductor Wd0: Inversion state surface depletion width (undisturbed, that is, dark conditions) ΨO: Semiconductor surface potential in inversion and dark conditions.

Claim 12

A method of determining the minority carrier surface recombination lifetime constant (t s ) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal corresponding to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information and the equation: ##EQU19## where: q: Electron charge ε s : Dielectric constant of the semiconductor Wd0: Inversion state surface depletion width (undisturbed, that is, dark conditions) ΨO: Semiconductor surface potential in inversion and dark conditions.

Claim 13

A method of determining the surface recombination velocity of a specimen of semiconductor material comprising: a. determining t s of the specimen by: i. providing a pair of electrodes, ii. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, iii. providing a signal representing the capacitance between the specimen and the electrode spaced from the specimen, iv. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, v. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, vi. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, vii. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, viii. providing a signal corresponding to the illumination intensity of the beam of light, and then, ix. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information, b. determining the doping concentration of the specimen, and then c. determining the surface recombination velocity using t s and the doping concentration.

Claim 14

A method of determining the surface recombination velocity of a specimen of semiconductor material comprising: a. determining t s of the specimen by: i. providing a pair of electrodes, ii. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, iii. providing a signal representing the capacitance between the specimen and the electrode spaced from the specimen, iv. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, v. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, vi. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, vii. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, viii. providing a signal corresponding to the illumination intensity of the beam of light, and then, ix. determining the surface minority carrier recombination time constant (t s ) using said ac photocurrent, capacitance and illumination intensity information, b. determining the doping concentration of the specimen, and then c. determining the surface recombination velocity using t s and the doping concentration.

Claim 15

A method of determining the surface recombination velocity of a specimen of semiconductor material comprising: a. determining t s of the specimen by: i. providing a pair of electrodes, ii. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrodes, iii. providing a signal representing the capacitance between the two electrodes, iv. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light varying in intensity over a predetermined range, v. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, vi. the intensity range of the light beam being such that the capacitance between the two electrodes is measurably changed as the light intensity changes, vii. providing information corresponding to the doping concentration, viii. providing a signal corresponding to the illumination intensity of the beam of light, ix. determining the surface minority carrier recombination time constant (t s ) using said signal information so provided, b. determining the doping concentration of the specimen, and then c. determining the surface recombination velocity using t s and the doping concentration.

Claim 16

A method of determining the surface recombination velocity of a specimen of semiconductor material comprising: a. determining t s of the specimen by: i. providing a pair of electrodes, ii. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrodes, iii. providing a signal representing the capacitance between the two electrodes, iv. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light varying in intensity over a predetermined range, v. applying a fixed bias voltage (V g ) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, vi. the intensity range of the light beam being such that the capacitance between the two electrodes is measurably changed as the light intensity changes, vii. providing information corresponding to the doping concentration, viii. providing a signal corresponding to the illumination intensity of the beam of light, ix. determining the surface minority carrier recombination time constant (t s ) using said signal information so provided, b. determining the doping concentration of the specimen, and then c. determining the surface recombination velocity using t s and the doping concentration.