US5480047A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a fine resist pattern
Assignee: Sharp Corp
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Filing: 1994-05-12
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Granted: 1996-01-02
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Expires: 2014-05-12
Abstract
Abstract A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.
Inventors
- 👤 Makoto Tanigawa
- 👤 Hiroki Tabuchi
- 👤 Takayuki Taniguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:43
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0005; G03F7/001; G03F1/00; G03F1/26; G03F1/32; G03F7/004; G03F7/09; G03F7/094; G03F7/20; G03F7/2022; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
92 words
A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.
Claim 2
Independent Claim
92 words
A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.
Claim 3
Dependent Claim
53 words
A method for forming the fine resist pattern according to claim 1 wherein the phase-shifting pattern is formed in use of a mask having a pattern, the pattern has a desired translucency in a portion, and the portion corresponds to a position where formation of the objective fine resist pattern is not desired.
Claim 4
Dependent Claim
59 words
A method for forming the resist pattern according to claim 1, wherein the phase shifting pattern is formed in use of a mask having a pattern, the pattern being either an acute triangle configuration or a round configuration in a portion, and the portion corresponding to a position where formation of the objective fine resist pattern is not desired.
Claim 5
Dependent Claim
55 words
A method for forming the resist pattern according to claim 1, wherein an entire surface of the semiconductor substrate is exposed using a mask bridging over adjacent phase shifting patterns for shielding a light in step (iii), thereby further forming a fine resist pattern having the phase-shifting pattern with a different width in step (iv).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-01 | 1999-07-03 | 2000-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-01 | 2003-07-03 | 2004-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-01 | 2007-07-03 | 2008-01-02 | $7700.00 | Window Closed / Lapsed |