Method of making a semiconductor diode

Claim 1

A method of making a semiconductor diode comprising the steps of: i) stamping a sheet form metal to form a jumper electrode having a soldering tip, a bottom electrode and connecting strips between said jumper electrode and said bottom electrode, then bending said connecting sections to move the soldering tip of said jumper electrode above said bottom electrode, and then placing a diode chip in between said soldering tip and said bottom electrode; ii) melting pre-attached solders on said diode chip to bond said chip to said soldering tip of said jumper electrode as well as said bottom electrode to form electrical connections; iii) chemically etching said diode chip by an etchant, then oxidizing said diode chip by an oxidizer, and then protecting said diode chip with a P-N junction protection material and curing it by heating; iv) filling a sealing resin in the diode chip cavity of a multi-layer substrate board and then applying the surface of said substrate board with a bonding agent, then placing said sub-assembly of diode chip and conductor element on said substrate board with said jumper electrode inserted into said diode chip cavity, and then bending said conductor element to form two opposite terminals; v) applying a layer of bonding agent over said cover lid, then fastening said cover lid to said conductor element, by bending up the fastening fingers of said conductor element to let said cover lid by firmly retained to said conductor element, and then curing said boding agent and said sealing resin by heating in an electric heating oven; and vi) testing the electric parameters of said diode units by an electric parameter testing apparatus and cutting a positive pole identification cut, and then separating individual diode units thus made and packing them individually by an automatic packing machine.

Claim 2

A method of making a semiconductor diode comprising the steps of: i) stamping a sheet form metal to form a jumper electrode having a soldering tip, a bottom electrode and connecting strips between said jumper electrode and said bottom electrode, then bending said connecting sections to move the soldering tip of said jumper electrode above said bottom electrode, and then placing a diode chip in between said soldering tip and said bottom electrode; ii) melting pre-attached solders on said diode chip to bond said chip to said soldering tip of said jumper electrode as well as said bottom electrode to form electrical connections; iii) chemically etching said diode chip by an etchant, then oxidizing said diode chip by an oxidizer, and then protecting said diode chip with a P-N junction protection material and curing it by heating; iv) filling a sealing resin in the diode chip cavity of a multi-layer substrate board and then applying the surface of said substrate board with a bonding agent, then placing said sub-assembly of diode chip and conductor element on said substrate board with said jumper electrode inserted into said diode chip cavity, and then bending said conductor element to form two opposite terminals; v) applying a layer of bonding agent over said cover lid, then fastening said cover lid to said conductor element, by bending up the fastening fingers of said conductor element to let said cover lid by firmly retained to said conductor element, and then curing said boding agent and said sealing resin by heating in an electric heating oven; and vi) testing the electric parameters of said diode units by an electric parameter testing apparatus and cutting a positive pole identification cut, and then separating individual diode units thus made and packing them individually by an automatic packing machine.