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US5492736A
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Fluorine doped silicon oxide process
Assignee: Air Products and Chemicals Inc
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Filing: 1994-11-28
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Granted: 1996-02-20
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Expires: 2014-11-28
Abstract
Abstract The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.
Inventors
- 👤 Ravi K. Laxman
- 👤 Arthur K. Hochberg
- 👤 David A. Roberts
- 👤 Raymond N. Vrtis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/66; H10P14/668; H10P14/6681; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
148 words
A process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR8## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6; and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1).
Claim 2
Dependent Claim
148 words
A process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR8## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6; and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1).
Claim 3
Dependent Claim
99 words
The process of claim 1 wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, C x H 2x+1 , C r H s F t , C 6 H 5 , or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, r is 1-6, s is (2r+1-t); t is 1 to (2r+1) and y is 0-6.
Claim 4
Dependent Claim
67 words
The process of claim 1 wherein said fluorinated silicon source is a composition of the formula: ##STR9## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, C x H 2x+1 , C r H s F t , where x is 1-6, r is 1-6, s is (2r+1-t) , and t is 1 to ( 2r+1).
Claim 5
Dependent Claim
87 words
The process of claim 1 wherein said fluorinated silicon source is selected from the group consisting of: FSi(C 2 H 5 ) 3 ; F 2 Si(C 2 H 5 ) 2 ; F 2 Si(CH 3 )CH 2 CH 2 Si(CH 3 )F 2 ; F 3 SiCH 2 CH 2 CH( SiF 3 )C 2 H 5 ; F 3 Si--(CH 2 ) u --SiF 3 where u is 1-6; and FSiR 2 H where R is C 1 -C 6 hydrocarbons or mixtures thereof.
Claim 6
Dependent Claim
22 words
The process of claim 1 wherein said fluorine-containing silicon oxide film formed comprises SiO p F q , wherein p=2-q and q=0.03-0.6.
Claim 7
Dependent Claim
35 words
The process of claim 1 wherein an oxygen containing compound selected from the group consisting of N 2 O, O 3 and O 2 is utilized as a reactant in said plasma-enhanced chemical vapor deposition.
Claim 8
Dependent Claim
20 words
The process of claim 6 wherein oxygen is present in ratio of 0.5:1 or greater of said fluorinated silicon source.
Claim 9
Dependent Claim
46 words
The process of claim 1 wherein said plasma-enhanced chemical vapor deposition is conducted at a temperature in the range of approximately 50° to 500° C., a pressure of approximately 200 mTorr to 2 Torr, and a plasma power of approximately 0.25 to 2 watts/cm 2 .
Claim 10
Dependent Claim
38 words
The process of claim 1 wherein said fluorinated silicon source is introduced into said plasma-enhanced chemical vapor deposition by a process selected from the group consisting of entrainment in an inert carrier gas, vaporization and direct liquid injection.
Claim 11
Dependent Claim
18 words
The process of claim 1 wherein said fluorinated silicon source is utilized in combination with other silicon sources.
Claim 12
Dependent Claim
156 words
A fluorine-containing silicon oxide film supported on a substrate comprising SiO p F q , wherein p=2-q and q=0.03-0.6, produced by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR10## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6; and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1).
Claim 13
Dependent Claim
156 words
A fluorine-containing silicon oxide film supported on a substrate comprising SiO p F q , wherein p=2-q and q=0.03-0.6, produced by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR10## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6; and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1).
Claim 14
Dependent Claim
20 words
The film of claim 11 having a index of refraction less than or equal to approximately 1.41 at 632 nm.
Claim 15
Dependent Claim
18 words
The composition of matter comprising F 2 Si(CH 3 )CH 2 CH 2 Si(CH 3 )F 2 .
Claim 16
Dependent Claim
18 words
The composition of matter comprising F 2 Si(CH 3 )CH 2 CH 2 Si(CH 3 )F 2 .
Claim 17
Dependent Claim
20 words
The composition of matter comprising F 3 SiCH 2 CH 2 CH 2 CH(SiF 3 )C 2 H 5 .
Claim 18
Dependent Claim
20 words
The composition of matter comprising F 3 SiCH 2 CH 2 CH 2 CH(SiF 3 )C 2 H 5 .
Claim 19
Dependent Claim
214 words
A process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source, comprising the steps of: (a) establishing a plasma by appropriate conditions in a chemical vapor deposition reactor charged with a substrate to be coated; (b) introducing a fluorinated silicon source and an oxygen containing compound into the reactor; (c) reacting said fluorinated silicon source with said oxygen containing compound to produce a chemical vapor deposited fluorinated silicon oxide film on said substrate, wherein said fluorinated silicon source has the formula: ##STR11## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated-or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6; and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1).
Claim 20
Dependent Claim
214 words
A process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source, comprising the steps of: (a) establishing a plasma by appropriate conditions in a chemical vapor deposition reactor charged with a substrate to be coated; (b) introducing a fluorinated silicon source and an oxygen containing compound into the reactor; (c) reacting said fluorinated silicon source with said oxygen containing compound to produce a chemical vapor deposited fluorinated silicon oxide film on said substrate, wherein said fluorinated silicon source has the formula: ##STR11## wherein at least one of R 1 -R 6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated-or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C x H 2x when one or more of R 1 , R 2 or R 3 is connected to R 4 , R 5 or R 6 through a bridging group C y H 2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6; and R 7 is independently H, F, C z H 2z+1 where z is 1-6 or C r H s F t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1).
References Cited (Backward Citations)
US5268202A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
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