US5502316A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer bonding of light emitting diode layers
Assignee: Lumileds LLC
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Filing: 1995-10-12
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Granted: 1996-03-26
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Expires: 2015-10-12
Abstract
Abstract A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.
Inventors
- 👤 Fred A. Kish
- 👤 Frank M. Steranka
- 👤 Dennis C. DeFevere
- 👤 Virginia M. Robbins
- 👤 John Uebbing
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:41
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/013; H10H20/018; H10H20/80; H10H20/81; H10H20/8215; H10H20/822; H10H20/824; H10W; H10W90/00; H10H20/816; H10H20/8162
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
77 words
A light emitting semiconductor device comprising: an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including a conductive ohmic bond to said semiconductor layers and being mechanically robust; and electrode means for applying a current to said arrangement of semiconductor layers.
Claim 2
Dependent Claim
77 words
A light emitting semiconductor device comprising: an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including a conductive ohmic bond to said semiconductor layers and being mechanically robust; and electrode means for applying a current to said arrangement of semiconductor layers.
Claim 3
Dependent Claim
20 words
The device of claim 1 wherein said semiconductor layers are epitaxial layers and said wafer-bond layer is a semiconductor substrate.
Claim 4
Dependent Claim
23 words
The device of claim 1 further comprising a transparent wafer-bond substrate on a side of said semiconductor layers opposite to said wafer-bond layer.
Claim 5
Dependent Claim
13 words
The device of claim 1 wherein said semiconductor layers form an LED structure.
Claim 6
Dependent Claim
30 words
The device of claim 1 wherein said wafer-bond layer is a transparent substrate having a thickness greater than 8 mil, the transparent substrate being wafer bonded to said semiconductor wafers.
Claim 7
Dependent Claim
34 words
The device of claim 1 wherein said semiconductor layers include an active layer having an emission energy, said wafer-bond layer being an electrically conductive substrate having an energy gap greater than said energy emission.
Claim 8
Dependent Claim
18 words
The device of claim 1 further comprising a second optically transparent wafer-bond layer coupled to said semiconductor layers.
Claim 9
Dependent Claim
81 words
A light emitting semiconductor device comprising: an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent, conductive ohmic wafer-bond layer coupled to the semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, the wafer-bond layer directly contacting the arrangement of semiconductor layers without any intervening metallic layer contact; and contacts for applying a current to the arrangement of semiconductor layers.
Claim 10
Dependent Claim
81 words
A light emitting semiconductor device comprising: an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent, conductive ohmic wafer-bond layer coupled to the semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, the wafer-bond layer directly contacting the arrangement of semiconductor layers without any intervening metallic layer contact; and contacts for applying a current to the arrangement of semiconductor layers.
Claim 11
Dependent Claim
14 words
The device of claim 8 wherein the semiconductor layers form a light emitting diode.
Claim 12
Dependent Claim
30 words
The device of claim 8 wherein the wafer-bond layer is a transparent substrate having a thickness greater than 8 mil, the transparent substrate being wafer bonded to the semiconductor wafers.
Claim 13
Dependent Claim
20 words
The device of claim 8 further comprising a second optically transparent conductive ohmic wafer-bond layer coupled to the semiconductor layers.
Claim 14
Dependent Claim
68 words
A light emitting semiconductor device comprising: an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including being mechanically robust; and electrode means for applying a current to said arrangement of semiconductor layers.
Claim 15
Dependent Claim
68 words
A light emitting semiconductor device comprising: an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including being mechanically robust; and electrode means for applying a current to said arrangement of semiconductor layers.
Claim 16
Dependent Claim
18 words
The device of claim 12 wherein the wafer bond is directly adjacent to at least one semiconductor layer.
Claim 17
Dependent Claim
14 words
The device of claim 12 wherein the semiconductor layers form a light emitting diode.
Claim 18
Dependent Claim
30 words
The device of claim 12 wherein the wafer-bond layer is a transparent substrate having a thickness greater than 8 mil, the transparent substrate being wafer bonded to the semiconductor wafers.
Claim 19
Dependent Claim
18 words
The device of claim 12 further comprising a second optically transparent wafer-bond layer coupled to the semiconductor layers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-26 | 1999-09-25 | 2000-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-26 | 2003-09-25 | 2004-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-26 | 2007-09-25 | 2008-03-26 | $7700.00 | Window Closed / Lapsed |