US5523840A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for measuring the thicknesses of layers of a multiple layer semiconductor film utilizing the comparison between a spatialgram and an optical characteristic matrix
Assignee: Mitsubishi Electric Corp
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Filing: 1994-06-21
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Granted: 1996-06-04
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Expires: 2014-06-21
Abstract
Abstract An interference waveform dispersion spectrum of light reflected from a multi-layer film is compared to a waveform obtained by numerical calculation using an optical characteristic matrix. Respective layer thickness values obtained from the calculated analysis of the Spatial interference waveform are subjected to waveform fitting with actually measured values. The theoretical interference spectrum is recalculated while changing approximate values of the layer thicknesses until a match is obtained to obtain precise respective layer thicknesses. The thicknesses of respective layers of a thin multi-layer film of submicron thicknesses can be non-destructively measured exactly and stably without direct contact.
Inventors
- 👤 Seiji Nishizawa
- 👤 Tokuji Takahashi
- 👤 Ryo Hattori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:50
CPC Classifications
G; G01; G01B; G01B11/00; G01B11/02; G01B11/06; G01B11/0616; G01B11/0625
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
149 words
An apparatus for measuring respective thicknesses of layers in a thin semiconductor multi-layer film comprising: means for irradiating a semiconductor multi-layer film with light having a wavenumber range from visible light to infrared light; means for measuring thicknesses of respective layers of a multi-layer film employing a Fourier transformation film thickness measuring method measuring respective film thicknesses from a waveform analysis of a Spatial interference waveform obtained from Fourier transformation of interference components of light reflected from the multi-layer film; means for setting respective measured values of layer thicknesses obtained from the waveform analysis of the Spatial interference waveform as initial values; means for obtaining a film interference waveform dispersion spectrum in wavenumber or wavelength by numerical calculation using an optical characteristic matrix; and a data processing apparatus for obtaining the thicknesses of respective layers from waveform fitting of the Spatial interference waveform and the calculated film interference waveform.
Claim 2
Independent Claim
149 words
An apparatus for measuring respective thicknesses of layers in a thin semiconductor multi-layer film comprising: means for irradiating a semiconductor multi-layer film with light having a wavenumber range from visible light to infrared light; means for measuring thicknesses of respective layers of a multi-layer film employing a Fourier transformation film thickness measuring method measuring respective film thicknesses from a waveform analysis of a Spatial interference waveform obtained from Fourier transformation of interference components of light reflected from the multi-layer film; means for setting respective measured values of layer thicknesses obtained from the waveform analysis of the Spatial interference waveform as initial values; means for obtaining a film interference waveform dispersion spectrum in wavenumber or wavelength by numerical calculation using an optical characteristic matrix; and a data processing apparatus for obtaining the thicknesses of respective layers from waveform fitting of the Spatial interference waveform and the calculated film interference waveform.
Claim 3
Independent Claim
127 words
A method for measuring respective thicknesses of layers in a thin semiconductor multi-layer film comprising: irradiating a semiconductor multi-layer film with light having a wavenumber range from visible light to infrared light; measuring respective film thicknesses employing a Fourier transformation multi-layer film thickness measuring method measuring respective layer thicknesses from a waveform analysis of a Spatial interference waveform obtained from Fourier transformation of interference components of light reflected from the multi-layer film; setting respective measured values of layer thicknesses obtained from the waveform analysis of the Spatial interference waveform as initial values; obtaining a film interference waveform dispersion spectrum in wavenumber or wavelength by numerical calculation using an optical characteristic matrix; and obtaining respective layer thicknesses from waveform fitting of the numerically calculated and Spatial interference waveforms.
Claim 4
Independent Claim
127 words
A method for measuring respective thicknesses of layers in a thin semiconductor multi-layer film comprising: irradiating a semiconductor multi-layer film with light having a wavenumber range from visible light to infrared light; measuring respective film thicknesses employing a Fourier transformation multi-layer film thickness measuring method measuring respective layer thicknesses from a waveform analysis of a Spatial interference waveform obtained from Fourier transformation of interference components of light reflected from the multi-layer film; setting respective measured values of layer thicknesses obtained from the waveform analysis of the Spatial interference waveform as initial values; obtaining a film interference waveform dispersion spectrum in wavenumber or wavelength by numerical calculation using an optical characteristic matrix; and obtaining respective layer thicknesses from waveform fitting of the numerically calculated and Spatial interference waveforms.
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