US5529630A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for manufacturing a liquid crystal display substrate, and apparatus for evaluating semiconductor crystals
Assignee: Tokyo Electron Ltd
•
Filing: 1995-02-09
•
Granted: 1996-06-25
•
Expires: 2015-02-09
Abstract
Abstract An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.
Inventors
- 👤 Issei Imahashi
- 👤 Kiichi Hama
- 👤 Jiro Hata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/09; Y10S148/15
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
169 words
An apparatus for forming a thin crystalline semiconductor film comprising: a processing chamber; means located within said processing chamber, for supporting an object having an amorphous semiconductor film; laser beam applying means for applying a laser beam onto a target region of the amorphous semiconductor film, to thereby effecting annealing on the target region; memory means for storing first information which represents a band-gap spectral reflectance distribution pertaining to a reference semiconductor material; laser-beam spectrum detecting means for detecting the laser beam applied onto said target region and reflected therefrom and for obtaining second information which represents a band-gap spectral reflectance distribution pertaining to said target region; evaluation means for comparing said first information with said second information and evaluating a crystallized condition of said target region; and laser-beam energy adjusting means for adjusting energy of the laser beam on the basis of the crystallized condition evaluated by said evaluation means, to thereby reducing a difference between between said first information and said second information into a predetermined range.
Claim 2
Independent Claim
169 words
An apparatus for forming a thin crystalline semiconductor film comprising: a processing chamber; means located within said processing chamber, for supporting an object having an amorphous semiconductor film; laser beam applying means for applying a laser beam onto a target region of the amorphous semiconductor film, to thereby effecting annealing on the target region; memory means for storing first information which represents a band-gap spectral reflectance distribution pertaining to a reference semiconductor material; laser-beam spectrum detecting means for detecting the laser beam applied onto said target region and reflected therefrom and for obtaining second information which represents a band-gap spectral reflectance distribution pertaining to said target region; evaluation means for comparing said first information with said second information and evaluating a crystallized condition of said target region; and laser-beam energy adjusting means for adjusting energy of the laser beam on the basis of the crystallized condition evaluated by said evaluation means, to thereby reducing a difference between between said first information and said second information into a predetermined range.
References Cited (Backward Citations)
US4292091A
Cited
US4309225A
Cited
US4322253A
Cited
US4724219A
Cited
JPS6354715A
Cited
JPS6476715A
Cited
JPH01179315A
Cited
US4931132A
Cited
JPH03248574A
Cited
JPH03268318A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-25 | 1999-12-25 | 2000-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-25 | 2003-12-25 | 2004-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-25 | 2007-12-25 | 2008-06-25 | $7700.00 | Window Closed / Lapsed |