US5539325A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Testing and exercising individual, unsingulated dies on a wafer
Assignee: LSI Corp
•
Filing: 1995-02-08
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Granted: 1996-07-23
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Expires: 2015-02-08
Abstract
Abstract Signals (including probes) from an external system are selectively connected to a plurality of unsingulated dies on a semiconductor wafer with a minimum number of connections and an electronic selection mechanism resident on the wafer. The electronic selection mechanism is connected to the individual dies by conductive lines on the wafer. The electronic selection mechanism is capable of providing the external signals (or connecting the external probe) to a single die or groups of the dies, and electronically "walking through" the entire plurality of unsingulated dies. Redundant conductive lines may be provided. Diodes and/or fuses may be provided in conjunction with the conductive lines, to protect against various faults which may occur in the conductive lines. Redundant electronic selection mechanisms may also be provided to ensure the ability to selectively provide signals to the unsingulated dies.
Inventors
- 👤 Michael D. Rostoker
- 👤 Carlos Dangelo
- 👤 James Koford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:20
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2855; G01R31/2856; G01R31/2884; G01R31/2886; G01R31/317; G01R31/3181; G01R31/3185; G01R31/318505; G01R31/318511; G11; G11C; G11C29/00; G11C29/006; G01R31/282; G01R31/2831
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
117 words
A method of applying an electronic signal from an external source to individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching said electronic signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic signal to a selected die designated by said selection signal; in which step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe.
Claim 2
Independent Claim
117 words
A method of applying an electronic signal from an external source to individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching said electronic signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic signal to a selected die designated by said selection signal; in which step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe.
Claim 3
Dependent Claim
54 words
A method according to claim 1, further comprising the steps of: (e) providing a pad on an area of the wafer external of said dies; (f) connecting said pad, with a second conductive line on the wafer, to an input of the electronic switching mechanism; and (g) applying said electronic signal to said pad.
Claim 4
Dependent Claim
27 words
A method according to claim 1, further comprising the step of: (e) providing redundant electronic mechanisms, on the wafer, for applying said electronic signal to said dies.
Claim 5
Dependent Claim
43 words
A method as in claim 1, in which: step (a) comprises providing the electronic switching mechanism in an area of the wafer peripherally external of said dies; and step (b) comprises providing said conductive lines in areas of the wafer between said dies.
Claim 6
Dependent Claim
40 words
A method as in claim 1, in which: step (a) comprises providing the electronic switching mechanism in an unused die area of the wafer; and step (b) comprises providing said conductive lines in areas of the wafer between said dies.
Claim 7
Dependent Claim
50 words
A method according to claim 1, in which: step (a) comprises providing the electronic switching mechanism as including an address decoder for decoding addresses corresponding to said dies respectively; and step (d) comprises applying said selection signal to the electronic switching mechanism as including an address of said selected die.
Claim 8
Dependent Claim
71 words
A method according to claim 1, in which: step (a) comprises providing the electronic switching mechanism as including a counter, and an address decoder for decoding counts of the counter as addresses corresponding to said dies respectively; and step (d) comprises applying said selection signal to the electronic switching mechanism as a count input to the counter for changing a count thereof to correspond to an address of said selected die.
Claim 9
Independent Claim
115 words
A method of performing dynamic burn-in of individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching an electronic burn-in signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic burn-in signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic burn-in signal to a selected die designated by said selection signal; in which step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe.
Claim 10
Independent Claim
115 words
A method of performing dynamic burn-in of individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching an electronic burn-in signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic burn-in signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic burn-in signal to a selected die designated by said selection signal; in which step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe.
Claim 11
Dependent Claim
55 words
A method according to claim 8, further comprising the steps of: (e) providing a pad on an area of the wafer external of said dies; (f) connecting said pad, with a second conductive line on the wafer, to an input of the electronic switching mechanism; and (g) applying said electronic burn-in signal to said pad.
Claim 12
Dependent Claim
28 words
A method according to claim 8, further comprising the step of: (e) providing redundant electronic mechanisms, on the wafer, for applying said electronic burn-in signal to said dies.
Claim 13
Dependent Claim
43 words
A method as in claim 8, in which: step (a) comprises providing the electronic switching mechanism in an area of the wafer peripherally external of said dies; and step (b) comprises providing said conductive lines in areas of the wafer between said dies.
Claim 14
Dependent Claim
40 words
A method as in claim 8, in which: step (a) comprises providing the electronic switching mechanism in an unused die area of the wafer; and step (b) comprises providing said conductive lines in areas of the wafer between said dies.
Claim 15
Dependent Claim
50 words
A method according to claim 8, in which: step (a) comprises providing the electronic switching mechanism as including an address decoder for decoding addresses corresponding to said dies respectively; and step (d) comprises applying said selection signal to the electronic switching mechanism as including an address of said selected die.
Claim 16
Dependent Claim
71 words
A method according to claim 8, in which: step (a) comprises providing the electronic switching mechanism as including a counter, and an address decoder for decoding counts of the counter as addresses corresponding to said dies respectively; and step (d) comprises applying said selection signal to the electronic switching mechanism as a count input to the counter for changing a count thereof to correspond to an address of said selected die.
Claim 17
Independent Claim
189 words
A method of applying an electronic signal from an external source to individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching said electronic signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic signal to a selected die designated by said selection signal; in which: step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe; step (a) comprises providing the electronic switching mechanism as including a flip-flop; and the method further comprises the steps of: (e) providing a touch pad on an area of the wafer external of said dies; and (f) connecting said touch pad, with a second conductive line on the wafer, to a signal input of the flip-flop; and step (d) comprises applying said selection signal to said touch pad using said e-beam probe.
Claim 18
Independent Claim
189 words
A method of applying an electronic signal from an external source to individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching said electronic signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic signal to a selected die designated by said selection signal; in which: step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe; step (a) comprises providing the electronic switching mechanism as including a flip-flop; and the method further comprises the steps of: (e) providing a touch pad on an area of the wafer external of said dies; and (f) connecting said touch pad, with a second conductive line on the wafer, to a signal input of the flip-flop; and step (d) comprises applying said selection signal to said touch pad using said e-beam probe.
Claim 19
Dependent Claim
22 words
A method according to claim 15, in which step (a) comprises providing said flip-flop such that said input is a toggle input.
Claim 20
Dependent Claim
125 words
A method according to claim 15, in which: step (a) comprises providing the electronic switching mechanism as including a set-reset flip-flop; the method further comprises the steps of: (e) providing a set touch pad on an area of the wafer external of said dies; (f) connecting said set touch pad, with a second conductive line on the wafer, to a set input of the flip-flop; (g) providing a reset touch pad on an area of the wafer external of said dies; (h) connecting said reset touch pad, with a third conductive line on the wafer, to a reset input of the flip-flop; and step (d) comprises selectively applying said selection signal to said set touch pad and said reset touch pad using said e-beam probe.
Claim 21
Independent Claim
187 words
A method of performing dynamic burn-in of individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching an electronic burn-in signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic burn-in signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic burn-in signal to a selected die designated by said selection signal; in which: step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe; step (a) comprises providing the electronic switching mechanism as including a flip-flop; and the method further comprises the steps of: (e) providing a touch pad on an area of the wafer external of said dies; and (f) connecting said touch pad, with a second conductive line on the wafer, to a signal input of the flip-flop; and step (d) comprises applying said selection signal to said touch pad using said e-beam probe.
Claim 22
Independent Claim
187 words
A method of performing dynamic burn-in of individual, unsingulated dies on a semiconductor wafer, comprising the steps of: (a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching an electronic burn-in signal to said dies; (b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively; (c) applying said electronic burn-in signal to the electronic switching mechanism; and (d) applying a selection signal to the electronic switching mechanism for switching said electronic burn-in signal to a selected die designated by said selection signal; in which: step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe; step (a) comprises providing the electronic switching mechanism as including a flip-flop; and the method further comprises the steps of: (e) providing a touch pad on an area of the wafer external of said dies; and (f) connecting said touch pad, with a second conductive line on the wafer, to a signal input of the flip-flop; and step (d) comprises applying said selection signal to said touch pad using said e-beam probe.
Claim 23
Dependent Claim
22 words
A method according to claim 18, in which step (a) comprises providing said flip-flop such that said input is a toggle input.
Claim 24
Dependent Claim
125 words
A method according to claim 18, in which: step (a) comprises providing the electronic switching mechanism as including a set-reset flip-flop; the method further comprises the steps of: (e) providing a set touch pad on an area of the wafer external of said dies; (f) connecting said set touch pad, with a second conductive line on the wafer, to a set input of the flip-flop; (g) providing a reset touch pad on an area of the wafer external of said dies; (h) connecting said reset touch pad, with a third conductive line on the wafer, to a reset input of the flip-flop; and step (d) comprises selectively applying said selection signal to said set touch pad and said reset touch pad using said e-beam probe.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-23 | 2000-01-22 | 2000-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-23 | 2004-01-22 | 2004-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-23 | 2008-01-22 | 2008-07-23 | $7700.00 | Window Closed / Lapsed |