Power control and delivery in plasma processing equipment

Claim 3

The method of claim 1, further comprising the step of controlling a plasma mode.

Claim 4

The method of claim 1, further comprising the step of controlling the desired values of the voltage and current at the plasma chamber electrode.

Claim 5

A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising: a radio frequency circulator having first, second and third ports, said circulator first port adapted for connection to the radio frequency power source; a radio frequency power sensor having a radio frequency input connected to said circulator second port and having a radio frequency output adapted for connection to the plasma chamber electrode, said power sensor having a signal output representative of the radio frequency power passing therethrough; a termination resistor connected to said circulator third port, said resistor dissipating reflected power and harmonics from the plasma chamber electrode; and a power controller connected to said sensor signal output, wherein said power controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode.

Claim 6

A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising: a radio frequency circulator having first, second and third ports, said circulator first port adapted for connection to the radio frequency power source; a radio frequency power sensor having a radio frequency input connected to said circulator second port and having a radio frequency output adapted for connection to the plasma chamber electrode, said power sensor having a signal output representative of the radio frequency power passing therethrough; a termination resistor connected to said circulator third port, said resistor dissipating reflected power and harmonics from the plasma chamber electrode; and a power controller connected to said sensor signal output, wherein said power controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode.

Claim 7

The plasma processing system of claim 4, further comprising a fixed matching network between the second port of said circulator and the radio frequency input of said power sensor.

Claim 8

A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising: an adjustable matching and parameter selection network having an input and an output, said network input adapted for connection to the radio frequency power source; a radio frequency parameter sensor having a radio frequency input connected to the output of said network and having a radio frequency output adapted for connection to the plasma chamber electrode, said parameter sensor having a plurality of signal outputs representative of the radio frequency power passing therethrough, the plasma chamber electrode voltage, current, phase angle between the voltage and current, direct current bias, harmonic content and impedance; and a controller connected to said sensor signal outputs, wherein said controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode, set said network to a pre-established impedance match between the plasma chamber and power source, control the current and voltage parameters at the plasma chamber electrode, and prevent unwanted process and matching conditions.

Claim 9

A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising: an adjustable matching and parameter selection network having an input and an output, said network input adapted for connection to the radio frequency power source; a radio frequency parameter sensor having a radio frequency input connected to the output of said network and having a radio frequency output adapted for connection to the plasma chamber electrode, said parameter sensor having a plurality of signal outputs representative of the radio frequency power passing therethrough, the plasma chamber electrode voltage, current, phase angle between the voltage and current, direct current bias, harmonic content and impedance; and a controller connected to said sensor signal outputs, wherein said controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode, set said network to a pre-established impedance match between the plasma chamber and power source, control the current and voltage parameters at the plasma chamber electrode, and prevent unwanted process and matching conditions.

Claim 10

The plasma processing system of claim 6, further comprising: a radio frequency circulator connected between the radio frequency power source and said network, said circulator having first, second and third ports, wherein the first port is adapted for connection to the radio frequency power source and the second port is connected to the input of said network; and a termination resistor connected to said circulator third port, said resistor dissipating reflected power and harmonics from the plasma chamber electrode.

Claim 11

The plasma processing system of claim 6, wherein said controller is a programmable computer system.

Claim 12

The plasma processing system of claim 6, wherein said controller controls the plasma mode.

Claim 13

A plasma processing system including a plurality of radio frequency power sources and plasma chamber having a plurality of radio frequency electrodes, said system comprising: a plurality of radio frequency circulators each having first, second and third ports, each first port of said plurality of circulators adapted for connection to a respective radio frequency power source; a plurality of radio frequency power sensors connected between each second port of said plurality of circulators and each of the plurality of radio frequency electrodes, each of said plurality of power sensors having a signal output representative of the radio frequency power passing therethrough; a plurality of termination resistors connected to each third port of said plurality of circulators, said termination resistors dissipating power reflected from the respective plasma chamber electrode; and a power controller connected to said plurality of sensor signal outputs, wherein said power controller is adapted to control the plurality of radio frequency power sources so as to maintain a desired process parameter at the plasma chamber electrode.

Claim 14

A plasma processing system including a plurality of radio frequency power sources and plasma chamber having a plurality of radio frequency electrodes, said system comprising: a plurality of radio frequency circulators each having first, second and third ports, each first port of said plurality of circulators adapted for connection to a respective radio frequency power source; a plurality of radio frequency power sensors connected between each second port of said plurality of circulators and each of the plurality of radio frequency electrodes, each of said plurality of power sensors having a signal output representative of the radio frequency power passing therethrough; a plurality of termination resistors connected to each third port of said plurality of circulators, said termination resistors dissipating power reflected from the respective plasma chamber electrode; and a power controller connected to said plurality of sensor signal outputs, wherein said power controller is adapted to control the plurality of radio frequency power sources so as to maintain a desired process parameter at the plasma chamber electrode.

Claim 15

A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising: first, second and third radio frequency parameter sensors each having a plurality of signal outputs representative of the radio frequency power passing therethrough, voltage, current, phase angle between the voltage and current, impedance, harmonic content and direct current bias; a first adjustable matching network for adjusting the impedance to the radio frequency power source; a second adjustable parameter network for controlling the plasma chamber E-field and H-field modes; said first sensor connected between the radio frequency power source and said first matching network; said second sensor connected between said first matching network and said second parameter network; said third sensor connected between said second parameter network and the plasma chamber electrode; and a controller connected to said first, second and third sensor signal outputs, wherein said controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode, set said first and second networks to pre-established impedance matches between the plasma chamber and power source, control the current and voltage parameters at the plasma chamber electrode, and prevent unwanted process and matching conditions.

Claim 16

A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising: first, second and third radio frequency parameter sensors each having a plurality of signal outputs representative of the radio frequency power passing therethrough, voltage, current, phase angle between the voltage and current, impedance, harmonic content and direct current bias; a first adjustable matching network for adjusting the impedance to the radio frequency power source; a second adjustable parameter network for controlling the plasma chamber E-field and H-field modes; said first sensor connected between the radio frequency power source and said first matching network; said second sensor connected between said first matching network and said second parameter network; said third sensor connected between said second parameter network and the plasma chamber electrode; and a controller connected to said first, second and third sensor signal outputs, wherein said controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode, set said first and second networks to pre-established impedance matches between the plasma chamber and power source, control the current and voltage parameters at the plasma chamber electrode, and prevent unwanted process and matching conditions.

Claim 17

A plasma processing system of claim 11, wherein said controller is a computer system having a software program that calculates the match conditions of said first and second networks thereby controlling the desired process parameters of the plasma chamber.

Claim 18

A plasma processing system of claim 11, further comprising: first and second circulators, and first and second termination resistors, said first and second termination resistors are connected to said first and second circulators, respectively; said first circulator is connected between said first sensor and said first matching network; and said second circulator is connected between said second sensor and said second parameter network.