Method and apparatus for monitoring illegal conditions in a nonvolatile memory circuit

Claim 2

An integrated memory circuit operable in a selected one of a high voltage mode and a low voltage mode, including: first means for monitoring status of the memory circuit during an operation of said memory circuit to identify a condition of the memory circuit that requires termination of said operation and asserting a status signal having a first value in response to presence of said condition; second means for terminating said operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode.

Claim 3

An integrated memory circuit operable in a selected one of a high voltage mode and a low voltage mode, including: first means for monitoring status of the memory circuit during an operation of said memory circuit to identify a condition of the memory circuit that requires termination of said operation and asserting a status signal having a first value in response to presence of said condition; second means for terminating said operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the memory circuit operates in the low voltage mode after operating in the high voltage mode, and wherein the halt signal means includes: means for delaying assertion of the halt signal to the second means until the low voltage mode, in response to receiving the status signal with said first value during the high voltage mode.

Claim 4

An integrated memory circuit operable in a selected one of a high voltage mode and a low voltage mode, including: first means for monitoring status of the memory circuit during an operation of said memory circuit to identify a condition of the memory circuit that requires termination of said operation and asserting a status signal having a first value in response to presence of said condition; second means for terminating said operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the memory circuit operates in the low voltage mode after operating in the high voltage mode, and wherein the halt signal means includes: means for delaying assertion of the halt signal to the second means until the low voltage mode, in response to receiving the status signal with said first value during the high voltage mode.

Claim 5

An integrated memory circuit operable in a selected one of a high voltage mode and a low voltage mode, including: first means for monitoring status of the memory circuit during an operation of said memory circuit to identify a condition of the memory circuit that requires termination of said operation and asserting a status signal having a first value in response to presence of said condition; second means for terminating said operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the halt signal means is a logic circuit, and the logic circuit includes: a flip-flop circuit having a first input which receives the status signal and an output, wherein the flip-flop circuit enters a first state upon being reset, undergoes a transition from the first state to a second state in response to said first value of the status signal, and asserts an output signal at the output while in the second state; and a second circuit having an output, a first input which receives the output signal from the flip-flop circuit, and a second input which receives a second signal, wherein a value of the second signal indicates that the memory circuit is in the low voltage mode, and wherein the second circuit asserts the halt signal at its output only in response to assertion of the output signal at its first input while the second signal having said value is asserted at its second input.

Claim 6

An integrated memory circuit operable in a selected one of a high voltage mode and a low voltage mode, including: first means for monitoring status of the memory circuit during an operation of said memory circuit to identify a condition of the memory circuit that requires termination of said operation and asserting a status signal having a first value in response to presence of said condition; second means for terminating said operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the halt signal means is a logic circuit, and the logic circuit includes: a flip-flop circuit having a first input which receives the status signal and an output, wherein the flip-flop circuit enters a first state upon being reset, undergoes a transition from the first state to a second state in response to said first value of the status signal, and asserts an output signal at the output while in the second state; and a second circuit having an output, a first input which receives the output signal from the flip-flop circuit, and a second input which receives a second signal, wherein a value of the second signal indicates that the memory circuit is in the low voltage mode, and wherein the second circuit asserts the halt signal at its output only in response to assertion of the output signal at its first input while the second signal having said value is asserted at its second input.

Claim 7

The memory circuit of claim 3, also including: means for resetting the flip-flop circuit to the first state by asserting a third signal to a second input of the flip-flop circuit, while the status signal asserted to the first input of the flip-flop circuit has a value other than said first value.

Claim 8

The memory circuit of claim 3, wherein the flip-flop circuit, after entering the second state, remains in said second state until it is reset to the first state.

Claim 9

The memory circuit of claim 1, wherein the memory circuit is an integrated nonvolatile memory circuit, and also including: an array of nonvolatile memory cells; and means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in the high voltage mode during a portion of the erase operation and in the low voltage mode during another portion of the erase operation, and wherein the second means halts said erase operation in response to the halt signal but only during the low voltage mode.

Claim 10

The memory circuit of claim 6, wherein each of the memory cells is a flash memory cell.

Claim 11

An integrated nonvolatile memory circuit, including: an array of nonvolatile memory cells; means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in a high voltage mode during a portion of the erase operation and in a low voltage mode during another portion of the erase operation; first means for monitoring status of the memory circuit during the erase operation to identify a condition of the memory circuit that requires termination of said erase operation and asserting a status signal having a first value in response to presence of the condition; second means for halting the erase operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode.

Claim 12

An integrated nonvolatile memory circuit, including: an array of nonvolatile memory cells; means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in a high voltage mode during a portion of the erase operation and in a low voltage mode during another portion of the erase operation; first means for monitoring status of the memory circuit during the erase operation to identify a condition of the memory circuit that requires termination of said erase operation and asserting a status signal having a first value in response to presence of the condition; second means for halting the erase operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode.

Claim 13

The memory circuit of claim 8, wherein each of the memory cells is a flash memory cell.

Claim 14

An integrated nonvolatile memory circuit, including; an array of nonvolatile memory cells; means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in a high voltage mode during a portion of the erase operation and in a low voltage mode during another portion of the erase operation; first means for monitoring status of the memory circuit during the erase operation to identify a condition of the memory circuit that requires termination of said erase operation and asserting a status signal having a first value in response to presence of the condition; second means for halting the erase operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the memory circuit operates in the low voltage mode after operating in the high voltage mode, and wherein the halt signal means includes: means for delaying assertion of the halt signal to the second means until the low voltage mode, in response to receiving the status signal with said first value during the high voltage mode.

Claim 15

An integrated nonvolatile memory circuit, including; an array of nonvolatile memory cells; means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in a high voltage mode during a portion of the erase operation and in a low voltage mode during another portion of the erase operation; first means for monitoring status of the memory circuit during the erase operation to identify a condition of the memory circuit that requires termination of said erase operation and asserting a status signal having a first value in response to presence of the condition; second means for halting the erase operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the memory circuit operates in the low voltage mode after operating in the high voltage mode, and wherein the halt signal means includes: means for delaying assertion of the halt signal to the second means until the low voltage mode, in response to receiving the status signal with said first value during the high voltage mode.

Claim 16

An integrated nonvolatile memory circuit, including: an array of nonvolatile memory cells; means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in a high voltage mode during a portion of the erase operation and in a low voltage mode during another portion of the erase operation; first means for monitoring status of the memory circuit during the erase operation to identify a condition of the memory circuit that requires termination of said erase operation and asserting a status signal having a first value in response to presence of the condition; second means for halting the erase operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the halt signal means is a logic circuit, and the logic circuit includes: a flip-flop circuit having a first input and an output, wherein the first input receives the status signal, and wherein the flip-flop circuit enters a first state upon being reset, undergoes a transition from the first state to a second state in response to said first value of the status signal, and asserts an output signal at the output while in the second state; and a gate circuit having an output, a first input which receives the output signal from the flip-flop circuit, and a second input which receives a second signal, wherein a value of the second signal indicates that the memory circuit is in the low voltage mode, and wherein the gate circuit asserts the halt signal at its output only in response to assertion of the output signal at its first input while the second signal having said value is asserted at its second input.

Claim 17

An integrated nonvolatile memory circuit, including: an array of nonvolatile memory cells; means for executing an erase operation in which at least some of the cells are erased, wherein the memory circuit operates in a high voltage mode during a portion of the erase operation and in a low voltage mode during another portion of the erase operation; first means for monitoring status of the memory circuit during the erase operation to identify a condition of the memory circuit that requires termination of said erase operation and asserting a status signal having a first value in response to presence of the condition; second means for halting the erase operation in response to a halt signal; and halt signal means for receiving the status signal from the first means, generating the halt signal in response to the first value of the status signal, and asserting the halt signal to the second means regardless of whether said condition continues to be present but only during the low voltage mode, wherein the halt signal means is a logic circuit, and the logic circuit includes: a flip-flop circuit having a first input and an output, wherein the first input receives the status signal, and wherein the flip-flop circuit enters a first state upon being reset, undergoes a transition from the first state to a second state in response to said first value of the status signal, and asserts an output signal at the output while in the second state; and a gate circuit having an output, a first input which receives the output signal from the flip-flop circuit, and a second input which receives a second signal, wherein a value of the second signal indicates that the memory circuit is in the low voltage mode, and wherein the gate circuit asserts the halt signal at its output only in response to assertion of the output signal at its first input while the second signal having said value is asserted at its second input.

Claim 18

The memory circuit of claim 11, wherein the gate circuit is a NOR gate.

Claim 25

The method of claim 13, wherein said operation of the memory circuit is an erase operation.

Claim 28

The method of claim 17, wherein the erase operation includes a repeating sequence of low voltage modes and high voltage modes, and wherein step (b) includes the step of: delaying assertion of the halt signal until one of said low voltage modes, in response to assertion of the status signal with said first value during one of said high voltage modes.

Claim 29

The method of claim 17, wherein the memory circuit includes a logic circuit comprising a flip-flop circuit and a gate circuit, the flip-flop circuit has an input and an output and the gate circuit has a first input connected to the output of the flip-flop circuit and a second input which receives a second signal, and a value of the second signal indicates that the memory circuit is in the low voltage mode, and wherein step (b) includes the steps of: (d) resetting the flip-flop circuit to a first state; (e) after step (d), asserting the status signal to the input of the flip-flop circuit, thereby causing the flip-flop circuit to undergo a transition from the first state to a second state, wherein the flip-flop circuit asserts an output signal at the output while in the second state; and (f) asserting the halt signal at the output of the gate circuit in response to assertion of the output signal at the first input of the gate circuit and assertion of the second signal with said value at the second input of the gate circuit.