Semiconductor memory device and method of using the same

Claim 1

A method for using a semiconductor memory device having a plurality of memory cells series-connected to each other, each memory cell formed by a P-channel transistor in which a control gate electrode is stacked via an insulating film on a floating gate electrode; a first selecting transistor having a source and a drain, one of the source and the drain being connected to one end of said plural memory cells series-connected to each other; a bit line connected to the other of the source and the drain of said first selecting transistor; a second selecting transistor having a source and a drain, one of the source and the drain being connected to the other end of said plural memory cells series-connected to the other; and a power source line connected to the other of the source and the drain of said second selecting transistor; said method comprising the steps of: setting, to a positive value, a potential at a control gate electrode of a P-channel transistor forming a memory cell selected from said plurality of memory cells; producing an avalanche breakdown at a drain junction of said P-channel transistor forming said selected memory cell; and writing data into said selected memory cell by injecting electrons generated by the avalanche breakdown into a floating gate electrode of said P-channel transistor forming said selected memory.

Claim 2

A method for using a semiconductor memory device having a plurality of memory cells series-connected to each other, each memory cell formed by a P-channel transistor in which a control gate electrode is stacked via an insulating film on a floating gate electrode; a first selecting transistor having a source and a drain, one of the source and the drain being connected to one end of said plural memory cells series-connected to each other; a bit line connected to the other of the source and the drain of said first selecting transistor; a second selecting transistor having a source and a drain, one of the source and the drain being connected to the other end of said plural memory cells series-connected to the other; and a power source line connected to the other of the source and the drain of said second selecting transistor; said method comprising the steps of: setting, to a positive value, a potential at a control gate electrode of a P-channel transistor forming a memory cell selected from said plurality of memory cells; producing an avalanche breakdown at a drain junction of said P-channel transistor forming said selected memory cell; and writing data into said selected memory cell by injecting electrons generated by the avalanche breakdown into a floating gate electrode of said P-channel transistor forming said selected memory.

Claim 5

A method for using a semiconductor memory device having a plurality of memory cells series-connected to each other, each memory cell formed by a P-channel transistor in which a control gate electrode is stacked via an insulating film on a floating gate electrode; a first selecting transistor having a source and a drain, one of the source and the drain being connected to one end of said plural memory cells series-connected to each other; a bit line connected to the other of the source and the drain of said first selecting transistor; a second selecting transistor having a source and a drain, one of the source and the drain being connected to the other end of said plural memory cells series-connected to each other; and a power source line connected to the other of the source and the drain of said second selecting transistor, said method comprising the steps of: writing data into a memory cell selected from said plurality of memory cells, said writing comprising the steps of: setting, to a positive value, a potential at a control gate electrode of a P-channel transistor forming said selected memory cell, producing an avalanche breakdown at a drain junction of said P-channel transistor forming said selected memory cell, and writing data into said selected memory cell by injecting electrons generated by the avalanche breakdown into a floating gate electrode of said P-channel transistor forming said selected memory cell; and reading data from the selected memory cell, said reading comprising the steps of: producing a voltage difference between said one end of said plural memory cells and said other end of said plural memory cells, bringing all P-channel transistors forming memory cells not selected from said plural memory cells, said first selecting transistor, and said second selecting transistor into conductive conditions, selecting a potential at a control gate electrode of a P-channel transistor forming said selected memory cell to be an intermediate voltage between a threshold voltage under a data writing condition and a threshold voltage under a data non-writing condition, and reading data written into said selected memory cell by determining whether or not a current flows through said bit line.

Claim 6

A method for using a semiconductor memory device having a plurality of memory cells series-connected to each other, each memory cell formed by a P-channel transistor in which a control gate electrode is stacked via an insulating film on a floating gate electrode; a first selecting transistor having a source and a drain, one of the source and the drain being connected to one end of said plural memory cells series-connected to each other; a bit line connected to the other of the source and the drain of said first selecting transistor; a second selecting transistor having a source and a drain, one of the source and the drain being connected to the other end of said plural memory cells series-connected to each other; and a power source line connected to the other of the source and the drain of said second selecting transistor, said method comprising the steps of: writing data into a memory cell selected from said plurality of memory cells, said writing comprising the steps of: setting, to a positive value, a potential at a control gate electrode of a P-channel transistor forming said selected memory cell, producing an avalanche breakdown at a drain junction of said P-channel transistor forming said selected memory cell, and writing data into said selected memory cell by injecting electrons generated by the avalanche breakdown into a floating gate electrode of said P-channel transistor forming said selected memory cell; and reading data from the selected memory cell, said reading comprising the steps of: producing a voltage difference between said one end of said plural memory cells and said other end of said plural memory cells, bringing all P-channel transistors forming memory cells not selected from said plural memory cells, said first selecting transistor, and said second selecting transistor into conductive conditions, selecting a potential at a control gate electrode of a P-channel transistor forming said selected memory cell to be an intermediate voltage between a threshold voltage under a data writing condition and a threshold voltage under a data non-writing condition, and reading data written into said selected memory cell by determining whether or not a current flows through said bit line.