US5578839A
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Light-emitting gallium nitride-based compound semiconductor device
Assignee: Nichia Corp
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Filing: 1993-11-17
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Granted: 1996-11-26
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Expires: 2013-11-17
Abstract
Abstract A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In x Ga 1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
Inventors
- 👤 Shuji Nakamura
- 👤 Takashi Mukai
- 👤 Naruhito Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:43
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/811; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H10H20/8215; H10H20/8252
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
133 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity In x Ga 1-x N, where 0<x<1 ductor doped with an impurity; a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light emitting layer; wherein said compound semiconductor of said light-emitting layer is of the n-type and is doped with a p-type impurity.
Claim 2
Dependent Claim
133 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity In x Ga 1-x N, where 0<x<1 ductor doped with an impurity; a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light emitting layer; wherein said compound semiconductor of said light-emitting layer is of the n-type and is doped with a p-type impurity.
Claim 3
Dependent Claim
38 words
The device according to claim 1, wherein said impurity doped in said compound semiconductor of said light-emitting layer comprises a p-type impurity including a Group II element and an n-type impurity including a Group IV or VI element.
Claim 4
Dependent Claim
22 words
The device according to claim 1, wherein said compound semiconductor of said light-emitting layer is of n-type, doped with an n-type impurity.
Claim 5
Dependent Claim
17 words
The device according to claim 3, wherein said n-type impurity comprises a Group IV or VI element.
Claim 6
Dependent Claim
27 words
The device according to claim 1, wherein said compound semiconductor of said first clad layer is represented by the formula: Ga y Al 1-y N, where 0≦y≦1.
Claim 7
Dependent Claim
27 words
The device according to claim 1, wherein said compound semiconductor of said second clad layer is represented by the formula: Ga z Al 1-z N, where 0≦z≦1.
Claim 8
Dependent Claim
19 words
The device according to claim 1, wherein said light-emitting layer has a thickness of 10 Å to 0.5 μm.
Claim 9
Dependent Claim
33 words
The device according to claim 1, wherein said double-heterostructure has an n-type GaN contact layer joined to said first clad layer, and a p-type GaN contact layer joined to said second clad layer.
Claim 10
Dependent Claim
8 words
The device according to claim 1, wherein 0<x<0.5.
Claim 11
Dependent Claim
114 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type In x Ga 1-x N, where 0<x<1, compound semiconductor doped with at least a p-type impurity; a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.
Claim 12
Dependent Claim
114 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type In x Ga 1-x N, where 0<x<1, compound semiconductor doped with at least a p-type impurity; a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.
Claim 13
Dependent Claim
28 words
The device according to claim 10, wherein said compound semiconductor of said light-emitting layer has an electron carrier concentration of 1×10 17 to 5×10 21 /cm 3 .
Claim 14
Dependent Claim
27 words
The device according to claim 10, wherein said compound semiconductor of said light-emitting layer is doped with not only said p-type impurity but also an n-type impurity.
Claim 15
Dependent Claim
38 words
The device according to claim 10, wherein said p-type impurity doped in said compound semiconductor of said light-emitting layer comprises at least one element selected from the group consisting of cadmium, zinc, beryllium, magnesium, calcium, strontium, and barium.
Claim 16
Dependent Claim
34 words
The device according to claim 12, wherein said n-type impurity doped in said compound semiconductor of said light-emitting layer comprises at least one element selected from the group consisting of silicon, germanium, and tin.
Claim 17
Dependent Claim
27 words
The device according to claim 10, wherein said compound semiconductor of said first clad layer is represented by a formula: Ga -y Al 1-y N, where 0≦y≦1.
Claim 18
Dependent Claim
27 words
The device according to claim 10, wherein said compound semiconductor of said second clad layer is represented by a formula: Ga z Al 1-z N, where 0≦z≦1.
Claim 19
Dependent Claim
27 words
The device according to claim 12, wherein said p-type impurity doped in said compound semiconductor of said light-emitting layer comprises zinc, and said n-type impurity comprises silicon.
Claim 20
Dependent Claim
18 words
The device according to claim 10, wherein said double-heterostructure is provided on a substrate through a buffer layer.
Claim 21
Dependent Claim
33 words
The device according to claim 10, wherein said double-heterostructure has an n-type GaN contact layer joined to said first clad layer, and a p-type GaN contact layer joined to said second clad layer.
Claim 22
Dependent Claim
8 words
The device according to claim 10, wherein 0<x<0.5.
Claim 23
Dependent Claim
116 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type In x Ga 1-x N, where 0<x<1, compound semiconductor doped with an n-type impurity; a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.
Claim 24
Dependent Claim
116 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type In x Ga 1-x N, where 0<x<1, compound semiconductor doped with an n-type impurity; a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.
Claim 25
Dependent Claim
23 words
The device according to claim 21, wherein said n-type impurity doped in said compound semiconductor of said light-emitting layer comprises silicon or germanium.
Claim 26
Dependent Claim
36 words
The device according to claim 21, wherein said n-type impurity doped in said compound semiconductor of said light-emitting layer comprises silicon, and a concentration of the silicon is 1×10 17 to 1×10 21 /cm 3 .
Claim 27
Dependent Claim
27 words
The device according to claim 21, wherein said compound semiconductor of said first clad layer is represented by a formula: Ga y Al 1-y N, where 0≦y≦1.
Claim 28
Dependent Claim
27 words
The device according to claim 21, wherein said compound semiconductor of said second clad layer is represented by a formula: Ga z Al 1-z N, where 0≦z≦1.
Claim 29
Dependent Claim
19 words
The device according to claim 21, wherein said light-emitting layer has a thickness of 10 Å to 0.5 μm.
Claim 30
Dependent Claim
38 words
The device according to claim 21, wherein said compound semiconductor of said second clad layer is doped with a p-type impurity comprising magnesium, and a concentration of the magnesium is 1×10 18 to 1×10 21 /cm 3 .
Claim 31
Dependent Claim
19 words
The device according to claim 21, wherein said second clad layer has a thickness of 0.05 to 1.5 μm.
Claim 32
Dependent Claim
18 words
A device according to claim 21, wherein said double-heterostructure is provided on a substrate through a buffer layer.
Claim 33
Dependent Claim
33 words
The device according to claim 21, wherein said double-heterostructure has an n-type GaN contact layer joined to said first clad layer, and a p-type GaN contact layer joined to said second clad layer.
Claim 34
Dependent Claim
8 words
The device according to claim 21, wherein 0<x<0.5.
Claim 35
Dependent Claim
117 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second surfaces and comprising a low-resistivity III-V Group gallium nitride-based compound semiconductor containing indium, gallium and nitrogen and doped with an impurity; a first clad layer joined to said first surface of said light-emitting layer and comprising an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second surface of said light-emitting layer and comprising a low-resistivity p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; wherein said light-emitting layer is n-type.
Claim 36
Dependent Claim
117 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second surfaces and comprising a low-resistivity III-V Group gallium nitride-based compound semiconductor containing indium, gallium and nitrogen and doped with an impurity; a first clad layer joined to said first surface of said light-emitting layer and comprising an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second surface of said light-emitting layer and comprising a low-resistivity p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; wherein said light-emitting layer is n-type.
Claim 37
Dependent Claim
27 words
The device according to claim 32, wherein said second clad layer is doped with magnesium in a concentration of 1×10 18 to 1×10 21 /cm 3 .
Claim 38
Dependent Claim
18 words
The device according to claim 32, wherein said light-emitting layer is doped with both p-type and n-type impurities.
Claim 39
Dependent Claim
23 words
The device according to claim 34, wherein said p-type impurity doped in said light-emitting layer comprises zinc, and said n-type impurity comprises silicon.
Claim 40
Dependent Claim
24 words
The device according to claim 35, wherein said light-emitting layer has an electron carrier concentration of 1×10 17 to 5×10 21 /cm 3 .
Claim 41
Dependent Claim
17 words
The device according to claim 32, wherein said light-emitting layer is n-type, doped with an n-type impurity.
Claim 42
Dependent Claim
29 words
The device according to claim 37, wherein said n-type impurity doped in said light-emitting layer comprises silicon in a concentration of 1×10 17 to 1×10 21 /cm 3 .
Claim 43
Dependent Claim
27 words
The device according to claim 38, wherein said second clad layer is doped with magnesium in a concentration of 1×10 18 to 1×10 21 /cm 3 .
References Cited (Backward Citations)
JPS6417484A
Cited
JPH02229475A
Cited
JPH03203388A
Cited
US5237182A
Cited
JPH04209577A
Cited
EP0496030A2
Cited
JPH04236478A
Cited
US5323027A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-26 | 2000-05-27 | 2000-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-26 | 2004-05-27 | 2004-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-26 | 2008-05-27 | 2008-11-26 | $7700.00 | Window Closed / Lapsed |