US5599740A
Expired / Lapsed
US
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Deposit-etch-deposit ozone/teos insulator layer method
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1995-11-16
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Granted: 1997-02-04
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Expires: 2015-11-16
Abstract
Abstract A method for forming a gap-filling and self-planarizing silicon oxide insulator spacer layer within a patterned integrated circuit layer. Formed upon a semiconductor substrate is a patterned integrated circuit layer which is structured with a titanium nitride upper-most layer. The patterned integrated circuit layer also has at least one lower-lying layer formed of a material having a growth rate with respect to ozone assisted Chemical Vapor Deposited (CVD) silicon oxide layers greater than the growth rate of ozone assisted Chemical Vapor Deposited (CVD) silicon oxide layers upon titanium nitride. Formed within and upon the patterned integrated circuit layer is a silicon oxide insulator spacer layer deposited through an ozone assisted Chemical Vapor Deposition (CVD) process. The silicon oxide insulator spacer layer is formed until the surface of the titanium nitride upper-most layer is passivated with the silicon oxide insulator spacer layer. The silicon oxide insulator spacer layer is then etched from the surface of the titanium nitride upper-most layer. Finally, additional portions of the silicon oxide insulator spacer layer are sequentially deposited and etched until the surface of the silicon oxide insulator spacer layer over the lower layer(s) of the patterned integrated circuit layer is planar with the upper surface of the titanium nitride upper-most layer of the patterned integrated circuit layer.
Inventors
- 👤 Syun-Ming Jang
- 👤 Chen-Hua Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:45
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/098
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
220 words
A method for forming a silicon oxide insulator spacer layer within a patterned integrated circuit layer upon a semiconductor substrate comprising: (a) forming upon a semiconductor substrate a patterned integrated circuit layer, the patterned integrated circuit layer being structured with a titanium nitride upper-most layer, the titanium nitride upper-most layer having a first growth rate with respect to ozone assisted Chemical Vapor Deposited (CVD) silicon oxide layers, the patterned integrated circuit layer also having at least one lower-lying layer formed of a material having a second growth rate with respect to ozone assisted Chemical Vapor Deposited (CVD) silicon oxide layers, the second growth rate being greater than the first growth rate; (b) forming within and upon the patterned integrated circuit layer a silicon oxide insulator spacer layer through an ozone assisted Chemical Vapor Deposition (CVD) process, the silicon oxide insulator spacer layer being formed until the surface of the titanium nitride upper-most layer is passivated with the silicon oxide insulator spacer layer; (c) etching the silicon oxide insulator spacer layer from the surface of the titanium nitride upper-most layer; and (d) sequentially repeating step (b) and step (c) until the surface of the silicon oxide insulation spacer layer over the lower-lying layer(s) of the patterned integrated circuit layer is planar with the upper surface of the titanium nitride upper-most layer.
Claim 2
Independent Claim
220 words
A method for forming a silicon oxide insulator spacer layer within a patterned integrated circuit layer upon a semiconductor substrate comprising: (a) forming upon a semiconductor substrate a patterned integrated circuit layer, the patterned integrated circuit layer being structured with a titanium nitride upper-most layer, the titanium nitride upper-most layer having a first growth rate with respect to ozone assisted Chemical Vapor Deposited (CVD) silicon oxide layers, the patterned integrated circuit layer also having at least one lower-lying layer formed of a material having a second growth rate with respect to ozone assisted Chemical Vapor Deposited (CVD) silicon oxide layers, the second growth rate being greater than the first growth rate; (b) forming within and upon the patterned integrated circuit layer a silicon oxide insulator spacer layer through an ozone assisted Chemical Vapor Deposition (CVD) process, the silicon oxide insulator spacer layer being formed until the surface of the titanium nitride upper-most layer is passivated with the silicon oxide insulator spacer layer; (c) etching the silicon oxide insulator spacer layer from the surface of the titanium nitride upper-most layer; and (d) sequentially repeating step (b) and step (c) until the surface of the silicon oxide insulation spacer layer over the lower-lying layer(s) of the patterned integrated circuit layer is planar with the upper surface of the titanium nitride upper-most layer.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the titanium nitride upper-most layer is from about 1000 to about 1400 angstroms thick.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the titanium nitride upper-most layer is formed through a Physical Vapor Deposition (PVD) sputtering process.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein the depth of the integrated ciruit pattern is from about 5000 to about 10000 angstroms.
Claim 6
Dependent Claim
38 words
The method of claim 1 wherein the lower-lying layer(s) is formed from a material chosen from the group of materials consisting of aluminum, aluminum alloys and silicon oxide formed through a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein the ratio of the first growth rate to the second growth rate is no greater than about 1:2.
Claim 8
Dependent Claim
24 words
The method of claim 1 wherein the ozone assisted Chemical Vapor Deposition (CVD) process employs Tetra Ethyl Ortho Silicate (TEOS) as a silicon material.
Claim 9
Dependent Claim
25 words
The method of claim 7 wherein the ozone assisted Chemical Vapor Deposition (CVD) process employs an ozone:TEOS molar ratio of about 12:1 to about 20:1.
Claim 10
Dependent Claim
22 words
The method of claim 1 wherein the etching is accomplished through a Reactive Ion Etch (RIE) process employing fluorine containing etchant gasses.
Claim 11
Independent Claim
258 words
A method for forming a silicon oxide insulation spacer layer between multi-layer patterned metal stacks upon a semiconductor substrate comprising: (a) forming upon a semiconductor substrate a silicon oxide insulator substrate layer, the silicon oxide insulator substrate layer being formed through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process; (b) forming upon the silicon oxide insulator substrate layer a series of multi-layer patterned metal stacks which expose a portion of the silicon oxide insulator substrate layer, the series of multi-layer patterned metal stacks having as their upper-most layers a series of titanium nitride upper barrier metal layers, the series of multi-layer patterned metal stacks also having as their lower-layers a series of alumnium containing alloy conductor metal layers; (c) forming within and upon the series of multi-layer patterned metal stacks and upon the portion of the silicon oxide insulator substrate layer exposed through the series of multi-layer patterned metal stacks a silicon oxide insulator spacer layer through an ozone assisted Chemical Vapor Deposition (CVD) process, the silicon oxide insulator spacer layer being formed until the surfaces of the series of titanium nitride upper barrier metal layers are passivatived with the silicon oxide insulator spacer layer; (d) etching the silicon oxide insulator spacer layer from the surfaces of the series of titanium nitride upper barrier metal layers; and (e) sequentially repeating step (c) and step (d) until the surface of the silicon oxide insulator spacer layer over the silicon oxide insulator substrate layer is planar with the upper surfaces of the series of titanium nitride upper barrier metal layers.
Claim 12
Independent Claim
258 words
A method for forming a silicon oxide insulation spacer layer between multi-layer patterned metal stacks upon a semiconductor substrate comprising: (a) forming upon a semiconductor substrate a silicon oxide insulator substrate layer, the silicon oxide insulator substrate layer being formed through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process; (b) forming upon the silicon oxide insulator substrate layer a series of multi-layer patterned metal stacks which expose a portion of the silicon oxide insulator substrate layer, the series of multi-layer patterned metal stacks having as their upper-most layers a series of titanium nitride upper barrier metal layers, the series of multi-layer patterned metal stacks also having as their lower-layers a series of alumnium containing alloy conductor metal layers; (c) forming within and upon the series of multi-layer patterned metal stacks and upon the portion of the silicon oxide insulator substrate layer exposed through the series of multi-layer patterned metal stacks a silicon oxide insulator spacer layer through an ozone assisted Chemical Vapor Deposition (CVD) process, the silicon oxide insulator spacer layer being formed until the surfaces of the series of titanium nitride upper barrier metal layers are passivatived with the silicon oxide insulator spacer layer; (d) etching the silicon oxide insulator spacer layer from the surfaces of the series of titanium nitride upper barrier metal layers; and (e) sequentially repeating step (c) and step (d) until the surface of the silicon oxide insulator spacer layer over the silicon oxide insulator substrate layer is planar with the upper surfaces of the series of titanium nitride upper barrier metal layers.
Claim 13
Dependent Claim
34 words
The method of claim 10 wherein the silicon oxide insulator substrate layer is formed through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process employing Tetra Ethyl Ortho Silicate (TEOS) as a silicon source material.
Claim 14
Dependent Claim
25 words
The method of claim 10 wherein the height of the series of multi-layer patterned metal stacks is from about 5800 to about 8600 angstroms each.
Claim 15
Dependent Claim
25 words
The method of claim 10 wherein the series of titanium nitride upper barrier metal layers are from about 1000 to about 1400 angstroms thick each.
Claim 16
Dependent Claim
25 words
The method of claim 10 wherein the series of titanium nitride upper barrier metal layers are formed through a Physical Vapor Deposition (PVD) sputtering process.
Claim 17
Dependent Claim
25 words
The method of claim 10 wherein the series of aluminum containing alloy conductor metal layers is from about 4000 to about 6000 angstroms thick each.
Claim 18
Dependent Claim
28 words
The method of claim 10 wherein the series of aluminum containing alloy conductor metal layers is formed from an aluminum alloy containing about 0.5 to about 1.0% copper.
Claim 19
Dependent Claim
25 words
The method of claim 10 wherein the ozone assisted Chemical Vapor Deposition (CVD) process employs Tetra Ethyl Ortho Silicate (TEOS) as a silicon source material.
Claim 20
Dependent Claim
25 words
The method of claim 17 wherein the ozone assisted Chemical Vapor Deposition (CVD) process employs an ozone:TEOS molar ratio of about 12:1 to about 20:1.
Claim 21
Dependent Claim
22 words
The method of claim 10 wherein the etching is accomplished through a Reactive Ion Etch (RIE) process employing fluorine containing etchant gasses.
Claim 22
Dependent Claim
24 words
The method of claim 10 wherein the series of muti-layer patterned metal stacks form a patterned first conductor metal layer within an integrate circuit.
Claim 23
Dependent Claim
31 words
The method of claim 10 wherein the series of multi-layer patterned metal stacks form a patterned conductor metal layer other than a patterned first conductor metal layer within an integrated circuit.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-04 | 2000-08-05 | 2001-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-04 | 2004-08-05 | 2005-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-04 | 2008-08-05 | 2009-02-04 | $7700.00 | Window Closed / Lapsed |