Adjustable dc bias control in a plasma reactor

Claim 2

A plasma reactor with selectable direct current (dc) bias control, comprising: a grounded reactor chamber having conductive walls; a grounded first electrode located in the chamber; a second electrode spaced apart from the first electrode, for supporting a workpiece to be processed in the reactor chamber; at least one inlet port for supplying process gases to the reactor chamber; at least one outlet port for evacuating gases from the chamber; a high-frequency power source connected between the second electrode and ground, to generate and sustain a plasma in the reactor chamber; and a plasma shield installed in the reactor chamber to prevent the plasma from reaching a portion of the reactor chamber; wherein the plasma shield has a plurality of narrow slits through it to permit the flow of process gases but not the plasma, the slits each having a cross-sectional area defined by a slit length dimension that is long relative to a slit width dimension, and the slits each having a length in the direction of gas flow that is also long relative to the slit width; and wherein the effective area of the grounded first electrode is reduced because the plasma is prevented from contacting the full extent of the chamber walls, and the reduced effective area results in a reduced dc bias on the second electrode.

Claim 3

A plasma reactor as defined in claim 1, wherein: the plasma shield is of a dielectric material.

Claim 4

A plasma reactor as defined in claim 2, wherein: the openings are smaller in width than the thickness of a sheath region of the plasma.

Claim 5

A plasma reactor as defined in claim 3, wherein: the openings are less than approximately 0.5 millimeter in width.

Claim 6

A plasma reactor as defined in claim 1, wherein: the plasma shield includes an annular ring of dielectric material sized to fit in an annular region of the reactor chamber to prevent the plasma from reaching the annular region.

Claim 7

A plasma reactor as defined in claim 5, wherein: the slits are smaller in width than the thickness of a sheath region of the plasma.

Claim 8

A plasma reactor as defined in claim 6, wherein: the slits are less than approximately 0.5 millimeter in width.

Claim 9

A plasma reactor as defined in claim 1, and further comprising: a removable chamber liner installed over at least a portion of the interior wall of the reactor chamber, to reduce the effective area of the first electrode and, therefore, the dc bias on the second electrode.

Claim 10

A plasma reactor as defined in claim 8, wherein: the removable chamber liner is also of a dielectric material and extends over a selected portion of the interior wall of the reactor chamber, to effect a desired reduction in the dc bias.

Claim 13

A method as defined in claim 10, and further comprising the step of: installing a removable chamber liner on at least a portion of the inside surface of the chamber, to further reduce the effective surface area of the grounded upper electrode and thereby further reduce the dc bias between the lower electrode and the plasma.

Claim 14

A method as defined in claim 11, and further comprising: removing and replacing the removable chamber liner periodically to facilitate cleaning of deposits from the chamber.

Claim 15

A plasma substrate processor for use with a high frequency power supply, comprising: a substrate support including a first electrode; a vacuum enclosure containing said support and defining an evacuable substrate processing environment about said substrate support; a process gas inlet provided in a wall of said enclosure; a gas evacuation output provided in a wall of said enclosure; a second electrode within said enclosure spaced from said first electrode, one of said electrodes being adapted to be connected to a high frequency power supply, the other being adapted to be connected to ground, so as to sustain a plasma within said enclosure based on the processing gases within said enclosure; and a plasma shield overlaying a significant portion of the walls of said enclosure; wherein any portion of the plasma shield which overlies one of said gas inlet and said gas evacuation outlet is provided with apertures small enough to prevent plasma from penetrating said apertures, yet large enough to allow passage of gas therethrough, each aperture having a cross-sectional area defined by a width dimension and a length dimension that is long relative to the width dimension, and each aperture having an axial length, measured in the direction of gas flow, that is also long relative the width dimension; whereby the effective area of the chamber walls capable of contacting the plasma is reduced and self-bias on any substrate supported on the substrate support is reduced.

Claim 16

A plasma substrate processor for use with a high frequency power supply, comprising: a substrate support including a first electrode; a vacuum enclosure containing said support and defining an evacuable substrate processing environment about said substrate support; a process gas inlet provided in a wall of said enclosure; a gas evacuation output provided in a wall of said enclosure; a second electrode within said enclosure spaced from said first electrode, one of said electrodes being adapted to be connected to a high frequency power supply, the other being adapted to be connected to ground, so as to sustain a plasma within said enclosure based on the processing gases within said enclosure; and a plasma shield overlaying a significant portion of the walls of said enclosure; wherein any portion of the plasma shield which overlies one of said gas inlet and said gas evacuation outlet is provided with apertures small enough to prevent plasma from penetrating said apertures, yet large enough to allow passage of gas therethrough, each aperture having a cross-sectional area defined by a width dimension and a length dimension that is long relative to the width dimension, and each aperture having an axial length, measured in the direction of gas flow, that is also long relative the width dimension; whereby the effective area of the chamber walls capable of contacting the plasma is reduced and self-bias on any substrate supported on the substrate support is reduced.

Claim 17

A plasma processor as in claim 13, in which a first portion of said plasma shield overlies a first region of the walls of said enclosure provided with at least one of said process gas inlet and said gas evacuation outlet, and said first shield portion has the apertures.

Claim 18

A plasma processor as in claim 14, in which said first shield portion is positioned between said first electrode and said first wall region.

Claim 19

A plasma processor as in claim 14, in which said first apertured shield portion surrounds said first electrode.

Claim 20

A plasma processor as in claim 16, in which said first apertured shield portion is positioned adjacent and generally in facing relationship to the enclosure wall supporting said substrate support.

Claim 21

A plasma processor as in claim 17, in which said first region of said enclosure wall comprises said enclosure wall supporting said substrate support.

Claim 22

A plasma processor as in claim 17, in which said first apertured shield portion is surrounded by and engages at an outer periphery thereof a second region of said enclosure wall.

Claim 23

A plasma processor as in claim 17, in which a solid second portion of said shield is provided over a second region of said enclosure walls which does not include said process gas inlet and gas evacuation outlet.

Claim 24

A plasma process as in claim 20, in which said shield is of a dielectric material.