Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer

Claim 2

A process for forming a tungsten nitride film, the process comprising: (a) providing a surface layer located on a substrate of a semiconductor wafer; (b) depositing a layer of tungsten on the surface layer with physical vapor deposition in an environment comprising a gaseous nitrogen content, the gaseous nitrogen content selected such that a light nucleation of tungsten nitride nuclei is incorporated in the layer of tungsten, the tungsten nitride nuclei being substantially uniformly dispersed throughout the tungsten layer; and (c) growing tungsten nitride grains in the tungsten layer in an environment containing nitrogen to form a layer of tungsten nitride.

Claim 3

A process as recited in claim 1, wherein substantially no tungsten nitride grain growth in the layer of tungsten occurs during the step of depositing a layer of tungsten on the surface layer.

Claim 4

A process as recited in claim 1, wherein the environment further comprises argon and a nitrogen-containing gas.

Claim 5

A process as recited in claim 1, further comprising the step, conducted prior to the step of providing a surface layer located on a substrate of a semiconductor wafer, of selecting a gaseous nitrogen content operating level in the environment comprising a gaseous nitrogen content.

Claim 6

A process as recited in claim 4, wherein the gaseous nitrogen content operating level is selected to correspond to an optimum gaseous nitrogen content operating level that causes the tungsten nitride nuclei to be substantially uniformly dispersed throughout the tungsten layer and that allows substantially no tungsten nitride grain growth in the layer of tungsten during the step of depositing a layer of tungsten on the surface layer.

Claim 7

A process as recited in claim 4, wherein the step of selecting the gaseous nitrogen content operating level comprises the further steps of: (a) depositing multiple layers of tungsten on a test semiconductor wafer with physical vapor deposition in a physical vapor deposition chamber having an environment of varying gaseous nitrogen content; (b) calculating and plotting the physical vapor deposition rate of tungsten as a function of the varying gaseous nitrogen content, thereby producing a plot of physical vapor deposition rate of tungsten as a function of gaseous nitrogen content that has a slope with at least a portion being substantially in the shape of an outward pointing elbow, the elbow comprising a first continuous section of the plot with a relatively slight downward slope, connected at a point of transition to a second continuous section of the plot with a relatively steep downward slope, the point of transition comprising an optimum gaseous nitrogen content operating level that causes the tungsten nitride nuclei to be substantially uniformly dispersed throughout the tungsten layer and that allows substantially no tungsten nitride grain growth in the layer of tungsten during the step of depositing a layer of tungsten on the surface layer; and (c) selecting the gaseous nitrogen content operating level of the environment comprising a gaseous nitrogen content to correspond to within approximately 15 percent of relative nitrogen content from the optimum gaseous nitrogen content operating level.

Claim 8

A process as recited in claim 6, wherein the point of transition comprises the point on the plot where the slope has the greatest rate of change in the downward direction.

Claim 9

A process as recited in claim 6, wherein the selected gaseous nitrogen content operating level of the environment comprising a gaseous nitrogen content is within a range of about three percent of relative nitrogen content from the optimum gaseous nitrogen content operating level.

Claim 10

A process as recited in claim 1, wherein the environment comprising a gaseous nitrogen content comprises gaseous nitrous oxide and a carrier gas comprising argon.

Claim 11

A process as recited in claim 1, wherein the step of growing tungsten nitride grains comprises heating the tungsten layer in an environment comprising a gaseous nitrogen content.

Claim 12

A process as recited in claim 10, wherein the step of growing tungsten nitride grains further comprises heating the layer of tungsten in a furnace at a temperature in the range of between about 400° C. and 700° C. in the environment comprising a gaseous nitrogen content.

Claim 13

A process as recited in claim 10, wherein the step of growing tungsten nitride grains comprises heating the layer of tungsten with a rapid thermal nitridization.

Claim 14

A process as recited in claim 1, wherein the physical vapor deposition comprises reactive sputtering.

Claim 15

A process as recited in claim 1, wherein the layer of tungsten nitride has a smooth surface and a large grain crystalline structure.

Claim 16

A process as recited in claim 1, wherein the substrate of a semiconductor wafer comprises a polysilicon substrate.

Claim 17

A process for forming a titanium salicide stack with a tungsten nitride cover layer, the process comprising: (a) depositing a layer of titanium on a silicon surface layer with physical vapor deposition in physical vapor deposition chamber having an environment containing gaseous nitrogen, said silicon surface layer being situated on a semiconductor wafer; (b) annealing the layer of titanium in an environment containing gaseous nitrogen to form a layer of titanium silicide; (c) depositing a layer of tungsten over the layer of titanium silicide with physical vapor deposition in an environment comprising a gaseous nitrogen content selected such that a light nucleation of tungsten nitride nuclei is incorporated in the layer of tungsten, the tungsten nitride nuclei being substantially uniformly dispersed throughout the tungsten layer; and (d) growing tungsten nitride grains in the tungsten layer in an environment containing gaseous nitrogen to form the layer of tungsten nitride.

Claim 18

A process for forming a titanium salicide stack with a tungsten nitride cover layer, the process comprising: (a) depositing a layer of titanium on a silicon surface layer with physical vapor deposition in physical vapor deposition chamber having an environment containing gaseous nitrogen, said silicon surface layer being situated on a semiconductor wafer; (b) annealing the layer of titanium in an environment containing gaseous nitrogen to form a layer of titanium silicide; (c) depositing a layer of tungsten over the layer of titanium silicide with physical vapor deposition in an environment comprising a gaseous nitrogen content selected such that a light nucleation of tungsten nitride nuclei is incorporated in the layer of tungsten, the tungsten nitride nuclei being substantially uniformly dispersed throughout the tungsten layer; and (d) growing tungsten nitride grains in the tungsten layer in an environment containing gaseous nitrogen to form the layer of tungsten nitride.

Claim 19

A process as recited in claim 16, wherein the silicon surface layer comprises polysilicon.

Claim 20

A process as recited in claim 17, further comprising the step of forming a light nitridation on the silicon surface layer.

Claim 21

A process as recited in claim 18, wherein the step of forming a light nitridation on the silicon surface layer comprises implanting nitrogen into the silicon surface layer with a power of approximately 10 KeV and a dosage of about 10 13 nitrogen atoms per cm 2 of the silicon surface layer.

Claim 22

A process as recited in claim 17, further comprising the step of implanting phosphorous into the silicon surface layer with a power of approximately 10 KeV and a dosage of about 10 13 nitrogen atoms per cm 2 of the silicon surface layer.

Claim 23

A process as recited in claim 16, wherein the step of annealing the titanium layer comprises conducting a first anneal at about 650° C. and a second anneal at about 850° C.

Claim 24

A process as recited in claim 21, further comprising the step, prior the second anneal and after the first anneal, of stripping any unreacted titanium from the titanium silicide layer.

Claim 25

A process as recited in claim 16, wherein the environment comprising a gaseous nitrogen content comprises a nitrogen in a carrier gas with a volume in the range of between zero and three percent.

Claim 26

A process as recited in claim 16, further comprising the step, conducted prior to the step of providing a surface layer located on a substrate of a semiconductor wafer, of selecting a gaseous nitrogen content operating level in the environment comprising a gaseous nitrogen content.

Claim 27

A process as recited in claim 24, wherein the gaseous nitrogen content operating level is selected to correspond to an optimum gaseous nitrogen content operating level that causes the tungsten nitride nuclei to be substantially uniformly dispersed throughout the tungsten layer and that allows substantially no tungsten nitride grain growth in the layer of tungsten during the step of depositing a layer of tungsten on the surface layer.

Claim 28

A process as recited in claim 24, wherein the step of selecting the gaseous nitrogen content operating level comprises the further steps of: (a) depositing multiple layers of tungsten on a test semiconductor wafer with physical vapor deposition in a physical vapor deposition chamber having an environment of varying gaseous nitrogen content; (b) calculating and plotting the physical vapor deposition rate of tungsten as a function of the varying gaseous nitrogen content, thereby producing a plot of physical vapor deposition rate of tungsten as a function of gaseous nitrogen content that has a slope with at least a portion being substantially in the shape of an outward pointing elbow, the elbow comprising a first continuous section of the plot with a relatively slight downward slope, connected at a point of transition to a second continuous section of the plot with a relatively steep downward slope, the point of transition comprising an optimum gaseous nitrogen content operating level that causes the tungsten nitride nuclei to be substantially uniformly dispersed throughout the tungsten layer and that allows substantially no tungsten nitride grain growth in the layer of tungsten during the step of depositing a layer of tungsten on the surface layer; and (c) selecting the gaseous nitrogen content operating level of the environment comprising a gaseous nitrogen content to correspond to within approximately 15 percent of relative nitrogen content from the optimum gaseous nitrogen content operating level.

Claim 29

A process as recited in claim 26, wherein the point of transition comprises the point on the plot where the slope has the greatest rate of change in the downward direction.

Claim 30

A process as recited in claim 26, wherein the selected gaseous nitrogen content operating level of the environment comprising a gaseous nitrogen content is within a range of about three percent of relative nitrogen content from the optimum gaseous nitrogen content operating level.

Claim 31

A process as recited in claim 26, wherein the environment comprising a gaseous nitrogen content comprises gaseous nitrogen and a carrier gas comprising argon.

Claim 32

A process as recited in claim 26, wherein the step of growing tungsten nitride grains comprises heating the layer of tungsten with a rapid thermal nitridization.

Claim 33

A process as recited in claim 26, wherein the step of growing tungsten nitride grains comprises heating the layer of tungsten at a temperature of about 400° C. to 700° C.

Claim 34

A process for forming a titanium salicide stack with a tungsten nitride cover layer, the process comprising: (a) forming a light nitridation on a polysilicon surface layer located on a semiconductor wafer by implanting nitrogen into the polysilicon surface layer at a power of approximately 10 KeV with a dosage of about 10 13 nitrogen atoms per square centimeter of polysilicon surface layer; (b) depositing a layer of titanium on the polysilicon surface layer with physical vapor deposition in a physical vapor deposition chamber having an environment of a carrier gas and a volume of gaseous nitrogen in the range of between zero and three percent; (c) annealing the layer of titanium in an environment of gaseous nitrogen to form a layer of titanium silicide; (d) creating an environment comprising an inert gas and a variable gaseous nitrogen content in a physical vapor deposition chamber; (e) depositing a layer of tungsten on the layer of titanium silicide with physical vapor deposition within the physical vapor deposition chamber in the environment comprising an inert gas and a variable gaseous nitrogen content, with the variable gaseous nitrogen content of the environment comprising an inert gas and a gaseous nitrogen content selected such that a light nucleation of tungsten nitride nuclei are incorporated into the layer of tungsten, the tungsten nitride nuclei being substantially uniformly dispersed throughout the tungsten layer with substantially no grain growth occurring while the layer tungsten is deposited; and (f) growing tungsten nitride grains in the tungsten layer in an environment of gaseous nitrogen at a temperature of between about 400° C. and 700° C. to form a substantially smooth layer of tungsten nitride with a large grain crystalline structure.

Claim 35

A process for forming a titanium salicide stack with a tungsten nitride cover layer, the process comprising: (a) forming a light nitridation on a polysilicon surface layer located on a semiconductor wafer by implanting nitrogen into the polysilicon surface layer at a power of approximately 10 KeV with a dosage of about 10 13 nitrogen atoms per square centimeter of polysilicon surface layer; (b) depositing a layer of titanium on the polysilicon surface layer with physical vapor deposition in a physical vapor deposition chamber having an environment of a carrier gas and a volume of gaseous nitrogen in the range of between zero and three percent; (c) annealing the layer of titanium in an environment of gaseous nitrogen to form a layer of titanium silicide; (d) creating an environment comprising an inert gas and a variable gaseous nitrogen content in a physical vapor deposition chamber; (e) depositing a layer of tungsten on the layer of titanium silicide with physical vapor deposition within the physical vapor deposition chamber in the environment comprising an inert gas and a variable gaseous nitrogen content, with the variable gaseous nitrogen content of the environment comprising an inert gas and a gaseous nitrogen content selected such that a light nucleation of tungsten nitride nuclei are incorporated into the layer of tungsten, the tungsten nitride nuclei being substantially uniformly dispersed throughout the tungsten layer with substantially no grain growth occurring while the layer tungsten is deposited; and (f) growing tungsten nitride grains in the tungsten layer in an environment of gaseous nitrogen at a temperature of between about 400° C. and 700° C. to form a substantially smooth layer of tungsten nitride with a large grain crystalline structure.

Claim 36

A process as recited in claim 32, wherein the step of selecting the gaseous nitrogen content comprises the further steps of: (a) depositing multiple layers of tungsten on a test semiconductor wafer with physical vapor deposition in a physical vapor deposition chamber having an environment of varying gaseous nitrogen content; (b) calculating and plotting the physical vapor deposition rate of tungsten as a function of the varying gaseous nitrogen content, thereby producing a plot of physical vapor deposition rate of tungsten as a function of gaseous nitrogen content that has a slope with at least a portion being substantially in the shape of an outward pointing elbow, the elbow comprising a first continuous section of the plot with a relatively slight downward slope, connected at a point of transition to a second continuous section of the plot with a relatively steep downward slope, the point of transition comprising an optimum gaseous nitrogen content operating level that causes the tungsten nitride nuclei to be substantially uniformly dispersed throughout the tungsten layer and that allows substantially no tungsten nitride grain growth in the layer of tungsten during the step of depositing a layer of tungsten on the surface layer; and (c) selecting the gaseous nitrogen content to correspond to within approximately three percent of relative nitrogen content from the optimum gaseous nitrogen content operating level.