Preferential sputtering of insulators from conductive targets

Claim 2

Asymmetric bipolar pulsed dc reactive sputtering process wherein a target material is sputtered from a conductive target in a plasma chamber and is reacted with a reactive gas in the chamber to form a compound that is then deposited on a substrate, comprising the steps of: applying a dc forward sputtering current between said target and an anode in said chamber at an applied forward voltage level that is negative to said target relative to said anode and so that said forward sputtering current causes noble gas ions to impinge upon said target with sufficient energy to free atoms of said target material from said target; introducing said reactive gas into said chamber to react with the free atoms of said target material; and applying, onto said forward sputtering current, pulses of a reverse voltage to said target that is positive relative to said anode at a suitable pulse rate and pulse width so that accumulations of said compound which have deposited on said target are bombarded by said noble gas ions with sufficient energy to free molecules of said compound from said target; wherein said forward applied voltage is between negative 300 and negative 700 volts and said reverse voltage is provided at a substantially smaller level between positive 50 volts and positive 150 volts; and wherein said pulse rate is between about 40 KHz and 200 KHz with said pulse width being between 0.25 μsec and 3 μsec.

Claim 3

Asymmetric bipolar dc plasma arrangement for reactive dc sputtering wherein a target material is reacted with a reactive gas to form a compound that is deposited on a substrate, comprising: a dc plasma chamber housing a sputtering target formed of said target material and serving as a cathode, an anode formed in said chamber, and means for introducing said reactive gas into said chamber; a dc power supply providing to said target a sputtering current at an applied voltage level that causes noble gas ions in said chamber to impinge upon said target with sufficient energy to free atoms of said target material from said target such that the free atoms react with said reactive gas to form said compound; and reverse bias means interposed in circuit between said dc power supply and said plasma chamber for passing said sputtering current to said target at said predetermined level relative to said anode, and applying to said sputtering current pulses of a positive reverse voltage relative to said anode at a suitable pulse rate and a pulse width so that accumulations of said compound which have been deposited on said target are bombarded by said noble gas ions with sufficient energy to free molecules of said compound from said target, wherein said positive reverse voltage is below about 150 volts and of significantly smaller magnitude than said negative voltage, said pulse rate is above 40 KHz, and said pulse width is between 0.25 microsec and microsec.

Claim 4

Asymmetric bipolar dc plasma arrangement for reactive dc sputtering wherein a target material is reacted with a reactive gas to form a compound that is deposited on a substrate, comprising: a dc plasma chamber housing a sputtering target formed of said target material and serving as a cathode, an anode formed in said chamber, and means for introducing said reactive gas into said chamber; a dc power supply providing to said target a sputtering current at an applied voltage level that causes noble gas ions in said chamber to impinge upon said target with sufficient energy to free atoms of said target material from said target such that the free atoms react with said reactive gas to form said compound; and reverse bias means interposed in circuit between said dc power supply and said plasma chamber for passing said sputtering current to said target at said predetermined level relative to said anode, and applying to said sputtering current pulses of a positive reverse voltage relative to said anode at a suitable pulse rate and a pulse width so that accumulations of said compound which have been deposited on said target are bombarded by said noble gas ions with sufficient energy to free molecules of said compound from said target, wherein said positive reverse voltage is below about 150 volts and of significantly smaller magnitude than said negative voltage, said pulse rate is above 40 KHz, and said pulse width is between 0.25 microsec and microsec.

Claim 5

Asymmetric bipolar dc plasma arrangement according to claim 2, wherein said dc power supply furnishes said negative voltage at a level between minus 300 and minus 700 volts, and said reverse bias means provides said pulses of positive reverse voltage at a level between 50 and 150 volts.

Claim 6

Asymmetric bipolar dc plasma arrangement according to claim 2, wherein said reverse bias means provide said pulses with their pulse width between 0.25 μsec and 3 μsec, and with the pulse rate between 40 KHz and 200 KHz.

Claim 7

Asymmetric bipolar dc sputtering process wherein a target material is sputtered from a conductive target in a plasma chamber to be deposited on a substrate, comprising the steps of applying a dc sputtering current to said target at an applied negative voltage level, relative to an anode in said chamber, that causes noble gas ions to impinge upon said target with sufficient energy to free atoms of said target material from said target; and applying pulses of a positive reverse voltage to said target relative to said anode at a suitable pulse rate and pulse width so that accumulations of insulating compound on said target are bombarded by said noble gas ions with sufficient energy to free molecules of said compound from said target; said pulse rate being between 40 KHz and 200 KHz, said pulse width being between 0.25 μsec and 3 μsec, and said positive reverse voltage being between about positive 50 volts and positive 150 volts.

Claim 8

Asymmetric bipolar dc sputtering process wherein a target material is sputtered from a conductive target in a plasma chamber to be deposited on a substrate, comprising the steps of applying a dc sputtering current to said target at an applied negative voltage level, relative to an anode in said chamber, that causes noble gas ions to impinge upon said target with sufficient energy to free atoms of said target material from said target; and applying pulses of a positive reverse voltage to said target relative to said anode at a suitable pulse rate and pulse width so that accumulations of insulating compound on said target are bombarded by said noble gas ions with sufficient energy to free molecules of said compound from said target; said pulse rate being between 40 KHz and 200 KHz, said pulse width being between 0.25 μsec and 3 μsec, and said positive reverse voltage being between about positive 50 volts and positive 150 volts.