US5660671A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetron plasma processing apparatus and processing method
Assignee: Toshiba Corp
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Filing: 1994-06-28
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Granted: 1997-08-26
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Expires: 2014-06-28
Abstract
Abstract A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
Inventors
- 👤 Hiromi Harada
- 👤 Sinji Kubota
- 👤 Hiromi Kumagai
- 👤 Junichi Arami
- 👤 Keiji Horioka
- 👤 Isahiro Hasegawa
- 👤 Haruo Okano
- 👤 Katsuya Okumura
- 👤 Yukimasa Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:44
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3266; H01J37/32669; H01J37/32623; H01J37/34; H01J37/3402; H01J37/3405; H01J37/3408; H01J37/3411; H01J37/345; H01J37/3452; H01J37/3488; H01J37/3494; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3344
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
163 words
A magnetron plasma processing apparatus comprising: a vacuum chamber which stores an etching object; a pair of parallel electrodes respectively provided in said vacuum chamber and having a first electrode holding said etching object and a second electrode being opposite from said first electrode; a third electrode which surrounds said first electrode and is grounded; gas-supply means for supplying gas to said vacuum chamber; magnetic-field generating means, which is opposite from said first electrode in opposition from said second electrode, the magnetic field generation means having a configuration for generating a magnetic field parallel with the upper surface of said etching object between said pair of parallel plane electrodes; means for rotating the magnetic field generating means to rotate the magnetic field; and power-supply means for supplying power to at least either of said first and second electrodes and generating discharge between said pair of parallel plane electrodes; wherein said power-supply means has means for supplying power to said first and second electrodes.
Claim 2
Dependent Claim
163 words
A magnetron plasma processing apparatus comprising: a vacuum chamber which stores an etching object; a pair of parallel electrodes respectively provided in said vacuum chamber and having a first electrode holding said etching object and a second electrode being opposite from said first electrode; a third electrode which surrounds said first electrode and is grounded; gas-supply means for supplying gas to said vacuum chamber; magnetic-field generating means, which is opposite from said first electrode in opposition from said second electrode, the magnetic field generation means having a configuration for generating a magnetic field parallel with the upper surface of said etching object between said pair of parallel plane electrodes; means for rotating the magnetic field generating means to rotate the magnetic field; and power-supply means for supplying power to at least either of said first and second electrodes and generating discharge between said pair of parallel plane electrodes; wherein said power-supply means has means for supplying power to said first and second electrodes.
Claim 3
Dependent Claim
108 words
A magnetron plasma processing apparatus comprising: a vacuum chamber which stores an etching object; first and second electrodes positioned in the vacuum chamber in a parallel relationship, the first electrode supporting said etching object, a top surface of said etching object facing the second electrode; a high-frequency power source for outputting an oscillating output; a means for supplying the oscillating output outputted from the high-frequency power source to the first and second electrodes, respectively; and means provided to the supplying means, for adjusting a relative phase of the oscillating output supplied to the first and second electrodes, to maintain a stable discharge between the first and second electrodes.
Claim 4
Dependent Claim
108 words
A magnetron plasma processing apparatus comprising: a vacuum chamber which stores an etching object; first and second electrodes positioned in the vacuum chamber in a parallel relationship, the first electrode supporting said etching object, a top surface of said etching object facing the second electrode; a high-frequency power source for outputting an oscillating output; a means for supplying the oscillating output outputted from the high-frequency power source to the first and second electrodes, respectively; and means provided to the supplying means, for adjusting a relative phase of the oscillating output supplied to the first and second electrodes, to maintain a stable discharge between the first and second electrodes.
Claim 5
Dependent Claim
67 words
A magnetron plasma processing apparatus according to claim 2, wherein said supplying means comprises: a first connecting means for electrically connecting the high-frequency power source to the first electrode, and a second connecting means for electrically connecting the high-frequency power source to the second electrode; and said phase adjusting means provided to the second connecting means for adjusting phase of oscillated frequency supplied to the second electrode.
Claim 6
Dependent Claim
23 words
A magnetron plasma processing apparatus according to claim 3, which includes impedance matching circuits respectively provided to the first and second connecting means.
Claim 7
Dependent Claim
21 words
A magnetron plasma processing apparatus according to claim 4, which includes amplifiers respectively provided to the first and second connecting means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-25 | 2001-02-24 | 2001-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-25 | 2005-02-24 | 2005-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-25 | 2009-02-24 | 2009-08-26 | $7700.00 | Window Closed / Lapsed |