US5683942A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing bump leaded film carrier type semiconductor device
Assignee: Renesas Electronics Corp
•
Filing: 1995-05-25
•
Granted: 1997-11-04
•
Expires: 2015-05-25
Abstract
Abstract An insulating film has conductive layers on a first surface and conductive protrusions on a second surface. The conductive layers are connected to the conductive protrusions via through holes provided in the insulating film. A semiconductor chip having pads is adhered by an adhesive layer to the insulating film. Then, the conductive layers are locally pressured, so that the conductive layers are electrically connected to respective ones of the pads.
Inventors
- 👤 Keiichiro Kata
- 👤 Shuichi Matsuda
- 👤 Eiji Hagimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:21
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W70/00; H10W70/60; H10W70/67; H10W70/688; H10W74/00; H10W74/10; H10W74/111; H10W70/62; H10W70/65; H10W70/654; H10W70/655; H10W70/68; H10W70/681; H10W72/072; H10W72/07251; H10W72/073; H10W72/20; H10W74/15; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
166 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed and a second surface on which conductive protrusions connected through said insulating film to respective ones of said conductive layers are formed, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers, preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film, adhering said semiconductor chip to said insulating film by an adhesive layer so that said openings oppose respective said pads through respective said conductive layers, and locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads.
Claim 2
Independent Claim
166 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed and a second surface on which conductive protrusions connected through said insulating film to respective ones of said conductive layers are formed, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers, preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film, adhering said semiconductor chip to said insulating film by an adhesive layer so that said openings oppose respective said pads through respective said conductive layers, and locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads.
Claim 3
Dependent Claim
48 words
A method as set forth in claim 1, wherein conductive members are inserted into through holes provided in said insulating film to electrically connect said conductive protrusions to respective ones of said conductive layers, and openings for locally pressing said conductive layers are provided in said insulating film.
Claim 4
Dependent Claim
18 words
A method as set forth in claim 2, wherein a filler is fitted into each of said openings.
Claim 5
Dependent Claim
29 words
A method as set forth in claim 1, wherein said conductive layers extend over through holes provided in said insulating film to reach respective ones of said conductive protrusions.
Claim 6
Dependent Claim
29 words
A method as set forth in claim 1, further comprising a step of potting only sides of said semiconductor device by resin after said locally pressing step is completed.
Claim 7
Dependent Claim
24 words
A method as set forth in claim 1, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 8
Dependent Claim
24 words
A method as set forth in claim 1, wherein said locally pressing step presses said conductive layers via fillers by using said bonding tool.
Claim 9
Independent Claim
144 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; adhering said semiconductor chip to said insulating film by an adhesive layer to that said openings oppose respective said pads through respective said conductive layers; and locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads.
Claim 10
Independent Claim
144 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; adhering said semiconductor chip to said insulating film by an adhesive layer to that said openings oppose respective said pads through respective said conductive layers; and locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads.
Claim 11
Dependent Claim
40 words
A method as set forth in claim 6, further comprising a step of forming conductive protrusions on a second surface of said insulating film, said conductive protrusions being connected through said insulating film to respective ones of said conductive layers.
Claim 12
Dependent Claim
48 words
A method as set forth in claim 9, wherein conductive members are inserted into through holes provided in said insulating film to electrically connect said conductive protrusions to respective ones of said conductive layers, and openings for locally pressing said conductive layers are provided in said insulating film.
Claim 13
Dependent Claim
18 words
A method as set forth in claim 10, wherein a filler is fitted into each of said openings.
Claim 14
Dependent Claim
29 words
A method as set forth in claim 9, wherein said conductive layers extend over through holes provided in said insulating film to reach respective ones of said conductive protrusions.
Claim 15
Dependent Claim
29 words
A method as set forth in claim 9, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 16
Dependent Claim
24 words
A method as set forth in claim 9, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 17
Dependent Claim
24 words
A method as set forth in claim 8, wherein said locally pressing step presses said conductive layers via fillers by using said bonding tool.
Claim 18
Independent Claim
177 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first surface and second surfacers and through holes therethrough, conductive layers being formed on said second surface, conductive protrusions being formed on said conductive layers, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulaing film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; adhering said semiconductor chip to said insulating film by an adhesive layer so that said openings oppose respective said pads through respective said conductive layers, and locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting conductive members with respective said pads.
Claim 19
Independent Claim
177 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first surface and second surfacers and through holes therethrough, conductive layers being formed on said second surface, conductive protrusions being formed on said conductive layers, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulaing film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; adhering said semiconductor chip to said insulating film by an adhesive layer so that said openings oppose respective said pads through respective said conductive layers, and locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting conductive members with respective said pads.
Claim 20
Dependent Claim
24 words
A method as set forth in claim 16, wherein conductive protrusions are formed on said conductive members on a side of said first surface.
Claim 21
Dependent Claim
29 words
A method as set forth in claim 16, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 22
Dependent Claim
24 words
A method as set forth in claim 16, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 23
Dependent Claim
24 words
A method as set forth in claim 16, wherein said locally pressing step presses said conductive members via fillers by using said bonding tool.
Claim 24
Independent Claim
169 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first and second surfaces and through holes therethrough, conductive layers being formed on said second surface, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; adhering said semiconductor chip to said insulating film by an adhesive layer so that said openings oppose respective said pads through respective said conductive layers; and locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive members with respective said pads.
Claim 25
Independent Claim
169 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first and second surfaces and through holes therethrough, conductive layers being formed on said second surface, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; adhering said semiconductor chip to said insulating film by an adhesive layer so that said openings oppose respective said pads through respective said conductive layers; and locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive members with respective said pads.
Claim 26
Dependent Claim
21 words
A method as set forth in claim 21, further comprising a step of forming first conductive protrusions on said conductive layers.
Claim 27
Dependent Claim
25 words
A method as set forth in claim 21, wherein second conductive protrusions are formed on said conducive members on a side of said first surface.
Claim 28
Dependent Claim
29 words
A method as set forth in claim 21, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 29
Dependent Claim
24 words
A method as set forth in claim 21, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 30
Dependent Claim
24 words
A method as set forth in claim 21, wherein said locally pressing step presses said conductive members via fillers by using said bonding tool.
Claim 31
Independent Claim
195 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed and a second surface on which conductive protrusions connected through said insulating film to respective ones of said conductive layers are formed,, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip having pads with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 32
Independent Claim
195 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed and a second surface on which conductive protrusions connected through said insulating film to respective ones of said conductive layers are formed,, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip having pads with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 33
Dependent Claim
48 words
A method as set forth in claim 27, wherein conductive members are inserted into through holes provided in said insulating film to electrically connect said conductive protrusions to respective ones of said conductive layers, and openings for locally pressing said conductive layers are provided in said insulating film.
Claim 34
Dependent Claim
18 words
A method as set forth in claim 27, wherein a filler is fitted into each of said openings.
Claim 35
Dependent Claim
29 words
A method as set forth in claim 27, wherein said conductive layers extend over through holes provided in said insulating film to reach respective ones of said conductive protrusions.
Claim 36
Dependent Claim
29 words
A method as set forth in claim 27, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 37
Dependent Claim
24 words
A method as set forth in claim 27, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 38
Dependent Claim
24 words
A method as set forth in claim 27, wherein said locally pressing step presses said conductive layers via fillers by using said bonding tool.
Claim 39
Independent Claim
171 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 40
Independent Claim
171 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having a first surface on which conductive layers are formed, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive layers by inserting a bonding tool into said openings and pressing said conductive layers with said bonding tool, thereby electrically connecting said conductive layers with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 41
Dependent Claim
40 words
A method as set forth in claim 34, further comprising a step of forming conductive protrusions on a second surface of said insulating film, said conductive protrusions being connected through said insulating film to respective ones of said conductive layers.
Claim 42
Dependent Claim
48 words
A method as set forth in claim 34, wherein conductive members are inserted into through holes provided in said insulating film to electrically connect said conductive protrusions to respective ones of said conductive layers, and openings for locally pressing said conductive layers are provided in said insulating film.
Claim 43
Dependent Claim
18 words
A method as set forth in claim 34, wherein a filler is fitted into each of said openings.
Claim 44
Dependent Claim
29 words
A method as set forth in claim 34, wherein said conductive layers extend over through holes provided in said insulating film to reach respective ones of said conductive protrusions.
Claim 45
Dependent Claim
29 words
A method as set forth in claim 34, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 46
Dependent Claim
24 words
A method as set forth in claim 34, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 47
Dependent Claim
24 words
A method as set forth in claim 34, wherein said locally pressing step presses said conductive layers via fillers by using said bonding tool.
Claim 48
Independent Claim
204 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first and second surfaces and through holes therethrough, conductive layers being formed on said second surface, conductive protrusions being formed on said conductive layers, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive members with said bonding tool, thereby electrically connecting said conductive members with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 49
Independent Claim
204 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first and second surfaces and through holes therethrough, conductive layers being formed on said second surface, conductive protrusions being formed on said conductive layers, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive members with said bonding tool, thereby electrically connecting said conductive members with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 50
Dependent Claim
24 words
A method as set forth in claim 42, wherein conductive protrusions are formed on said conductive members on a side of said first surface.
Claim 51
Dependent Claim
29 words
A method as set forth in claim 42, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 52
Dependent Claim
24 words
A method as set forth in claim 42, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 53
Dependent Claim
24 words
A method as set forth in claim 42, wherein said locally pressing step presses said conductive members via fillers by using said bonding tool.
Claim 54
Independent Claim
196 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first and second surfaces and through holes therethrough, conductive layers being formed on said second surface, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive members with said bonding tool, thereby electrically connecting said conductive members with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 55
Independent Claim
196 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing an insulating film having first and second surfaces and through holes therethrough, conductive layers being formed on said second surface, conductive members being formed in said through holes and being connected to respective ones of said conductive layers, said insulating film having a resin injection opening at a center portion thereof, said insulating film also having openings therethrough, said openings being covered with respective said conductive layers; preparing a semiconductor chip having pads located opposite respective said openings and a passivation film located so that said pads are surrounded by said passivation film, a surface of said pads being less distant from said semiconductor chip than a surface of said passivation film; combining said semiconductor chip with said insulating film so that said openings oppose respective said pads through respective said conductive layers; locally bending said conductive members by inserting a bonding tool into said openings and pressing said conductive members with said bonding tool, thereby electrically connecting said conductive members with respective said pads; and injecting resin via said resin injection opening into a gap between said insulating film and said semiconductor chip.
Claim 56
Dependent Claim
21 words
A method as set forth in claim 47, further comprising a step of forming first conductive protrutions on said conductive layers.
Claim 57
Dependent Claim
25 words
A method as set forth in claim 47, wherein second conductive protrusions are formed on said conductive members on a side of said first surface.
Claim 58
Dependent Claim
29 words
A method as set forth in claim 47, further comprising a step of potting only sides of said semiconductor device by resin after said local pressing step is completed.
Claim 59
Dependent Claim
24 words
A method as set forth in claim 47, further comprising a step of transfer-molding said semiconductor device after said local pressing step is completed.
Claim 60
Dependent Claim
24 words
A method as set forth in claim 47, wherein said locally pressing step presses said conductive members via fillers by using said bonding tool.
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USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 2000-11-03 | 2001-05-05 | 2001-11-04 | $2000.00 | Window Closed / Lapsed |
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