US5687112A
Expired / Lapsed
US
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Multibit single cell memory element having tapered contact
Assignee: Energy Conversion Devices Inc
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Filing: 1996-04-19
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Granted: 1997-11-11
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Expires: 2016-04-19
Abstract
Abstract An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.
Inventors
- 👤 Stanford R. Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:21
CPC Classifications
G; G11; G11C; G11C11/00; G11C13/00; G11C13/0002; G11C13/0021; G11C13/0069; G11C11/56; G11C11/5678; H; H10; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/026; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8418; H10N70/881; H10N70/882; H10N70/8828; G11C13/0004; G11C2013/008; G11C2213/00; G11C2213/50; G11C2213/52
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
175 words
In an electrically operated, directly overwritable, multibit, single-cell memory element including: a volume of memory material defining a single cell memory element including at least one chalcogen element and at least one transition metal element and said memory material characterized by (1) a large dynamic range of electrical resistance values, and (2) the ability for at least a filamentary portion of said memory material to be set to one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single-cell memory element with multibit storage capabilities; at least a filamentary portion of said single cell memory element being setable, by said selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material; first and second spacedly disposed contacts for supplying said electrical input signal to set said memory material to a selected resistance value within said dynamic range; the improvement comprising, in combination: said second contact tapering to a peak adjacent said memory material.
Claim 2
Dependent Claim
175 words
In an electrically operated, directly overwritable, multibit, single-cell memory element including: a volume of memory material defining a single cell memory element including at least one chalcogen element and at least one transition metal element and said memory material characterized by (1) a large dynamic range of electrical resistance values, and (2) the ability for at least a filamentary portion of said memory material to be set to one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single-cell memory element with multibit storage capabilities; at least a filamentary portion of said single cell memory element being setable, by said selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material; first and second spacedly disposed contacts for supplying said electrical input signal to set said memory material to a selected resistance value within said dynamic range; the improvement comprising, in combination: said second contact tapering to a peak adjacent said memory material.
Claim 3
Dependent Claim
23 words
The memory element of claim 1, wherein said chalcogen element is selected from the group of Te, Se, Ge, Sb and mixtures thereof.
Claim 4
Dependent Claim
19 words
The memory element of claim 1, wherein said first contact includes an adjacent thin-film layer adjacent said memory material.
Claim 5
Dependent Claim
16 words
The memory element of claim 3, wherein said adjacent thin-film layer is comprised of carbon material.
Claim 6
Dependent Claim
33 words
The memory element of claim 3, wherein said adjacent thin-film layer includes Ti, and two or more elements selected from the group consisting of C, N, Al, Si and mixtures or alloys thereof.
Claim 7
Dependent Claim
21 words
The memory element of claim 3, wherein the thickness of said adjacent thin-film layer is about 100 Å to 2000 Å.
Claim 8
Dependent Claim
22 words
The memory element of claim 1, wherein said first contact further includes a remote thin-film layer spacedly disposed from said memory material.
Claim 9
Dependent Claim
32 words
The memory element of claim 7, wherein said remote thin-film layer is comprised of one or more elements selected from the group consisting of Ti, W, Mo and mixtures or alloys thereof.
Claim 10
Dependent Claim
22 words
The memory element of claim 7, wherein the thickness of said remote thin-film contact layer is about 100 Å to 4000 Å.
Claim 11
Dependent Claim
22 words
The memory element of claim 1, wherein the cross-sectional diameter of the peak of said second contact is less than 2000 Å.
Claim 12
Dependent Claim
18 words
The memory element of claim 1, wherein the cross-sectional diameter of said peak is less than 1000 Å.
Claim 13
Dependent Claim
18 words
The memory element of claim 1, wherein the cross-sectional diameter of said peak is less than 500 Å.
Claim 14
Dependent Claim
15 words
The memory element of claim 1, wherein said second spacedly disposed contact is conically pointed.
Claim 15
Dependent Claim
15 words
The memory element of claim 1, wherein said second spacedly disposed contact is pyramidally pointed.
Claim 16
Dependent Claim
18 words
The memory element of claim 1, wherein said second spacedly disposed contact further comprises a first thin-film layer.
Claim 17
Dependent Claim
33 words
The memory element of claim 15, wherein said first thin-film layer includes Ti, and two or more elements selected from the group consisting of C, N, Al, Si and mixtures or alloys thereof.
Claim 18
Dependent Claim
38 words
The memory element of claim 15, wherein said second spacedly disposed contact further comprises a second thin-film layer comprised of one or more elements selected from the group consisting of Ti, W, Mo and mixtures or alloys thereof.
References Cited (Backward Citations)
US5536947A
Cited
US5177567A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-10 | 2001-05-12 | 2001-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-10 | 2005-05-12 | 2005-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-10 | 2009-05-12 | 2009-11-11 | $7700.00 | Window Closed / Lapsed |