US5705019A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1996-04-23
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Granted: 1998-01-06
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Expires: 2016-04-23
Abstract
Abstract A plasma processing apparatus comprises a reaction chamber, an upper electrode, a lower electrode which confronts the upper electrode and also functions as a sample stage, means of supplying RF power between the upper electrode and lower electrode such that the RF power is supplied to one of the upper and lower electrodes, with another electrode and the reaction chamber being grounded, and RF impedance matching means, wherein the capacitance between the grounded electrode and the reaction chamber is 125 pF or less. The apparatus is capable of stabilizing the plasma generation and alleviating the occurrence of sudden deterioration of the repeatability of plasma processing and unequal performance of plasma processing among individual apparatus. The apparatus can be applied suitably to etching apparatus having small electrode spacing and using a chlorine compound gas or a bromine compound gas such as Cl2 or HBr.
Inventors
- 👤 Minoru Yamada
- 👤 Toshihiro Hayami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:14
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32174
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
86 words
A plasma processing apparatus comprising: a reaction chamber; an upper electrode; a lower electrode which confronts said upper electrode and also functions as a sample stage; means of supplying RF power between said upper electrode and said lower electrode, said RF power being supplied to one of said upper or lower electrode, with another of said electrodes and said reaction chamber being grounded, and means of matching the RF impedance, wherein the capacitance between the grounded electrode and said reaction chamber is 125 pF or less.
Claim 2
Dependent Claim
86 words
A plasma processing apparatus comprising: a reaction chamber; an upper electrode; a lower electrode which confronts said upper electrode and also functions as a sample stage; means of supplying RF power between said upper electrode and said lower electrode, said RF power being supplied to one of said upper or lower electrode, with another of said electrodes and said reaction chamber being grounded, and means of matching the RF impedance, wherein the capacitance between the grounded electrode and said reaction chamber is 125 pF or less.
Claim 3
Dependent Claim
31 words
A plasma processing apparatus according to claim 1, wherein the grounded electrode is insulated from said reaction chamber with an insulation member having a relative dielectric constant of 3.6 or less.
Claim 4
Dependent Claim
29 words
A plasma processing apparatus according to claim 1, wherein the spacing between said upper electrode and said lower electrode is 5 mm or more and 15 mm or less.
Claim 5
Dependent Claim
83 words
A plasma processing apparatus comprising: a reaction chamber; an upper electrode; a lower electrode which confronts said upper electrode and also functions as a sample stage; means of supplying RF power between said upper electrode and said lower electrode, said RF power being supplied to one of said upper or lower electrode, with another of said electrodes and said reaction chamber being grounded; means of matching the RF impedance; and means of varying the capacitance between the grounded electrode and said reaction chamber.
Claim 6
Dependent Claim
83 words
A plasma processing apparatus comprising: a reaction chamber; an upper electrode; a lower electrode which confronts said upper electrode and also functions as a sample stage; means of supplying RF power between said upper electrode and said lower electrode, said RF power being supplied to one of said upper or lower electrode, with another of said electrodes and said reaction chamber being grounded; means of matching the RF impedance; and means of varying the capacitance between the grounded electrode and said reaction chamber.
Claim 7
Dependent Claim
29 words
A plasma processing apparatus according to claim 4, wherein the spacing between said upper electrode and said lower electrode is 5 mm or more and 15 mm or less.
References Cited (Backward Citations)
JPS5615044A
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JPS56100422A
Cited
JPS5784137A
Cited
JPS59207629A
Cited
JPH05175163A
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JPH05234952A
Cited
US5584933A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-05 | 2001-07-07 | 2002-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-05 | 2005-07-07 | 2006-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-05 | 2009-07-07 | 2010-01-06 | $7700.00 | Window Closed / Lapsed |