US5714768A
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US
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Second-layer phase change memory array on top of a logic device
Assignee: Ovonyx Memory Technology LLC
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Filing: 1995-10-24
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Granted: 1998-02-03
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Expires: 2015-10-24
Abstract
Abstract The present invention is a computational unit comprising a logic processing device, and a memory array deposited on top of and communicating with the logic processing device. More specifically, the present invention is a computational unit comprising a logic processing device, and electrically erasable phase change memory deposited on top of and communicating with the logic processing device.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Guy C. Wicker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:21
CPC Classifications
H; H10; H10B; H10B63/00; H10B63/20; H10P; H10P10/00; G; G11; G11C; G11C11/00; G11C11/56; G11C11/5678; G11C13/00; G11C13/0002; G11C13/0004; H10B63/10; H10B63/80; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/856; G11C2213/00; G11C2213/70; G11C2213/71; H10N70/00; H10N70/011; H10N70/021; H10N70/026; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
177 words
A computational unit comprising: a logic processing device; and a thin-film memory array deposited on top of and communicating with said logic processing device, wherein said memory array comprises: a plurality of electrically activated, directly overwritable multibit single-cell memory elements spacedly disposed in rows and columns on said logic processing device; each of said memory elements comprising a volume of memory material defining a single cell memory element, said memory material having a large dynamic range of electrical resistance values and can be set to one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities, and said memory material having at least a filamentary portion that can be set to any resistance value in said dynamic range by said selected electrical signal regardless of the previous resistance value of said material; and a pair of spacedly disposed contacts for supplying said electrical input signal to set said memory material to a selected resistance value within said dynamic range.
Claim 2
Dependent Claim
177 words
A computational unit comprising: a logic processing device; and a thin-film memory array deposited on top of and communicating with said logic processing device, wherein said memory array comprises: a plurality of electrically activated, directly overwritable multibit single-cell memory elements spacedly disposed in rows and columns on said logic processing device; each of said memory elements comprising a volume of memory material defining a single cell memory element, said memory material having a large dynamic range of electrical resistance values and can be set to one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities, and said memory material having at least a filamentary portion that can be set to any resistance value in said dynamic range by said selected electrical signal regardless of the previous resistance value of said material; and a pair of spacedly disposed contacts for supplying said electrical input signal to set said memory material to a selected resistance value within said dynamic range.
Claim 3
Dependent Claim
34 words
The memory element of claim 1, wherein said memory material is selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof.
Claim 4
Dependent Claim
43 words
The memory element of claim 2, wherein said memory material includes Te, Ge and Sb in the ratio Te a Ge b Sb 100- (a+b) where the subscripts are in atomic percentages which total 100% of the constituent elements and 40≦a≦58 and 8≦b≦40.
Claim 5
Dependent Claim
15 words
The computational unit of claim 1, wherein said logic processing unit is an integrated circuit.
Claim 6
Dependent Claim
17 words
The computational unit of claim 4, wherein said logic processing unit comprises logic units; and device drivers.
Claim 7
Dependent Claim
15 words
The computational unit of claim 5, wherein said logic processing unit comprises a semiconductor material.
Claim 8
Dependent Claim
12 words
The computational unit of claim 6, wherein said semiconductor material is silicon.
Claim 9
Dependent Claim
26 words
The computational unit of claim 1, wherein said logic processing unit comprises a logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein.
Claim 10
Dependent Claim
15 words
The computational unit of claim 8, wherein said two-terminal chalcogenide switches are chalcogenide threshold switches.
Claim 11
Dependent Claim
13 words
The computational unit of claim 8, wherein said logic family employs multi-phase clocking.
Claim 12
Dependent Claim
13 words
The computational unit of claim 10, wherein said logic family employs three-phase clocking.
Claim 13
Dependent Claim
13 words
The computational unit of claim 10, wherein said logic family employs four-phase clocking.
Claim 14
Dependent Claim
16 words
The computational unit of claim 12, wherein said four-phase clocking has a fifty percent duty cycle.
Claim 15
Dependent Claim
176 words
The computational unit of claim 8, wherein said logic family includes a logical operational circuit comprising: a first chalcogenide threshold switch connected in series to a second chalcogenide threshold switch; one or more input resistors each having a first and a second terminal, said first terminal of each of said one or more input resistors uniquely connected to one or more input points, said second terminal of each of said one or more input resistors connected to a junction between said first and said second threshold switches; a circuit powering point connected to a terminal of said first threshold switch opposite said junction of said first and said second threshold switches; a ground resistor having a first and a second terminal, said first terminal of said ground resistor connected to a terminal of said second threshold switch opposite said junction of said first and said second threshold switches, said second terminal of said ground resistor connected to ground; and a signal output terminal connected to a junction between said second threshold switch and said ground resistor.
Claim 16
Dependent Claim
17 words
The computational unit of claim 14, wherein said one or more input resistors is one input resistor.
Claim 17
Dependent Claim
38 words
A computational unit comprising: a logic processing device comprising a logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein; and a memory array deposited on top of and communicating with said logic processing device.
Claim 18
Dependent Claim
38 words
A computational unit comprising: a logic processing device comprising a logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein; and a memory array deposited on top of and communicating with said logic processing device.
Claim 19
Dependent Claim
15 words
The computational unit of claim 16, wherein said two-terminal chalcogenide switches are chalcogenide threshold switches.
Claim 20
Dependent Claim
13 words
The computational unit of claim 16, wherein said logic family employs multi-phase clocking.
Claim 21
Dependent Claim
13 words
The computational unit of claim 18, wherein said logic family employs three-phase clocking.
Claim 22
Dependent Claim
13 words
The computational unit of claim 18, wherein said logic family employs four-phase clocking.
Claim 23
Dependent Claim
16 words
The computational unit of claim 20, wherein said four-phase clocking has a fifty percent duty cycle.
Claim 24
Dependent Claim
174 words
The computational unit of claim 16, wherein said logic family includes a logical operational circuit comprising: a first chalcogenide threshold switch connected in series to a second chalcogenide threshold switch; one or more input resistors each having a first and a second terminal, said first terminal of each of said one or more input resistors uniquely connected to one or more input points, said second terminal of each of said one or more input resistors connected to a junction between said first and said second threshold switches; a circuit powering point connected to a terminal of said first threshold switch opposite that of said junction of said first and said second threshold switches; a ground resistor having a first and a second terminal, said first terminal of said ground resistor connected a terminal of said second threshold switch opposite said junction of said first and said second threshold switches, said second terminal of said ground resistor connected to ground; and a signal output terminal connected between said second threshold switch and said ground resistor.
Claim 25
Dependent Claim
17 words
The computational unit of claim 22, wherein said one or more input resistors is one input resistor.
References Cited (Backward Citations)
US5432729A
Cited
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