US5723028A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrodeposition apparatus with virtual anode
Assignee: Individual
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Filing: 1994-10-19
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Granted: 1998-03-03
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Expires: 2014-10-19
Abstract
Abstract An electrochemical etching step in a semiconductor device fabrication process increases the radius of curvature of edges of metal lines deposited on the semiconductor device. The metal lines are fabricated by forming a mask, electrodepositing the metal, and removing the mask, and the electrochemical etching step in performed subsequently. The increased radius of curvature of the metal lines simplifies subsequent planarization and decreases line-to-line capacitance, thereby enhancing device performance. In an apparatus for performing the fabrication process, wires sown into a gasket which secures the semiconductor wafer and prevents electrolyte leakage, allows the gasket to function also as a component of the cathode. A more uniform metal deposition is created by a virtual anode, i.e., a metal plate having an aperture and being located between the anode and the cathode.
Inventors
- 👤 Jaime Poris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
156 words
Apparatus for electrodeposition of a conducting metal onto a semiconductor, said apparatus comprising: diffusion barrier deposition process means to provide a diffusion barrier layer on said semiconductor having contacts and vias, and to prevent metal diffusion into said semiconductor, an electrically conducting nucleation layer deposition process means to provide an electrically conducting nucleation layer on said diffusion barrier layer and a sufficient adhesion surface for electrodeposition of said metal, inert metal mask process means to place a first metal mask layer onto said nucleation layer, selective electrodeposition process means to selectively electrodeposit said metal onto said nucleation layer while simultaneously completely filling a contact or via, electrochemical etching means to increase a radius of curvature of edges of said metal, thereby facilitating planarization and decreasing line-to-line capacitance, and a virtual anode disposed between a cathode and an anode for improving primary current distribution to improve uniformity in a thickness of said metal electrodeposited on said semiconductor.
Claim 2
Dependent Claim
156 words
Apparatus for electrodeposition of a conducting metal onto a semiconductor, said apparatus comprising: diffusion barrier deposition process means to provide a diffusion barrier layer on said semiconductor having contacts and vias, and to prevent metal diffusion into said semiconductor, an electrically conducting nucleation layer deposition process means to provide an electrically conducting nucleation layer on said diffusion barrier layer and a sufficient adhesion surface for electrodeposition of said metal, inert metal mask process means to place a first metal mask layer onto said nucleation layer, selective electrodeposition process means to selectively electrodeposit said metal onto said nucleation layer while simultaneously completely filling a contact or via, electrochemical etching means to increase a radius of curvature of edges of said metal, thereby facilitating planarization and decreasing line-to-line capacitance, and a virtual anode disposed between a cathode and an anode for improving primary current distribution to improve uniformity in a thickness of said metal electrodeposited on said semiconductor.
Claim 3
Dependent Claim
17 words
The apparatus as in claim 1 further including a virtual anode gasket adapted to prevent electrolyte leakage.
Claim 4
Independent Claim
146 words
An apparatus for electrodeposition of metal onto a semiconductor having an electrically conducting layer, comprising: an anode, a cathode wire, a cell body, an anode gasket for sealing said anode to said cell body adapted to prevent leakage of an electrolyte, a cathode gasket for sealing said semiconductor to said cell body adapted to prevent leakage of said electrolyte and providing contact between said cathode wire and said electrically conducting layer, means for securing said semiconductor to said cathode gasket to exclude said electrolyte from contacting said cathode wire, means for exposing a selected area of said semiconductor to said electrolyte, a virtual anode located between said anode and said electrically conducting layer for creating a more uniform current distribution to said electrically conducting layer, and a virtual anode gasket for sealing said virtual anode to said cell body adapted to prevent leakage of said electrolyte.
Claim 5
Independent Claim
146 words
An apparatus for electrodeposition of metal onto a semiconductor having an electrically conducting layer, comprising: an anode, a cathode wire, a cell body, an anode gasket for sealing said anode to said cell body adapted to prevent leakage of an electrolyte, a cathode gasket for sealing said semiconductor to said cell body adapted to prevent leakage of said electrolyte and providing contact between said cathode wire and said electrically conducting layer, means for securing said semiconductor to said cathode gasket to exclude said electrolyte from contacting said cathode wire, means for exposing a selected area of said semiconductor to said electrolyte, a virtual anode located between said anode and said electrically conducting layer for creating a more uniform current distribution to said electrically conducting layer, and a virtual anode gasket for sealing said virtual anode to said cell body adapted to prevent leakage of said electrolyte.
References Cited (Backward Citations)
No citation records indexed.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-03-02 | 2001-09-01 | 2002-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-02 | 2005-09-01 | 2006-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-02 | 2009-09-01 | 2010-03-03 | $7700.00 | Window Closed / Lapsed |