US5741740A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-06-12
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Granted: 1998-04-21
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Expires: 2017-06-12
Abstract
Abstract A method for filling a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then oxidized thermally the silicon substrate to form within the trench a thermal silicon oxide trench liner layer. There is then formed upon the thermal silicon oxide trench liner layer a conformal silicon oxide intermediate layer formed through a plasma enhanced chemical vapor deposition (PECVD) method employing a silane silicon source material. Finally, there is then formed upon the conformal silicon oxide intermediate layer a gap filling silicon oxide trench fill layer through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material. To provide improved properties of the gap filling silicon oxide trench fill layer the thermal silicon oxide trench liner layer may be treated with a nitrogen containing plasma prior to forming the conformal silicon oxide intermediate layer thereupon.
Inventors
- 👤 Syun-Ming Jang
- 👤 Ying-Ho Chen
- 👤 Chen-Hua Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/668; H10P14/6681; H10P14/6682; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
112 words
A method for filling a trench within a silicon substrate comprising: providing a silicon substrate, the silicon substrate having a trench formed therein; oxidizing thermally the silicon substrate to form within the trench a thermal silicon oxide trench liner layer; forming upon the thermal silicon oxide trench liner layer a conformal silicon oxide intermediate layer formed through a plasma enhanced chemical vapor deposition (PECVD) method employing a silane silicon source material; and forming upon the conformal silicon oxide intermediate layer a gap filling silicon oxide trench fill layer formed through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material.
Claim 2
Independent Claim
112 words
A method for filling a trench within a silicon substrate comprising: providing a silicon substrate, the silicon substrate having a trench formed therein; oxidizing thermally the silicon substrate to form within the trench a thermal silicon oxide trench liner layer; forming upon the thermal silicon oxide trench liner layer a conformal silicon oxide intermediate layer formed through a plasma enhanced chemical vapor deposition (PECVD) method employing a silane silicon source material; and forming upon the conformal silicon oxide intermediate layer a gap filling silicon oxide trench fill layer formed through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material.
Claim 3
Dependent Claim
100 words
The method of claim 1 wherein the gap filling silicon oxide trench fill layer is formed with an attenuated surface sensitivity, an enhanced bulk quality and a diminished surface roughness in comparison with an otherwise equivalent gap filling silicon oxide trench fill layer formed upon an otherwise equivalent thermal silicon oxide trench liner layer absent an otherwise equivalent conformal silicon oxide intermediate layer formed through the plasma enhanced chemical vapor deposition (PECVD) method employing the silane silicon source material intervening the otherwise equivalent thermal silicon oxide trench liner layer and the otherwise equivalent gap filling silicon oxide trench fill layer.
Claim 4
Dependent Claim
26 words
The method of claim 1 wherein the silicon substrate is a silicon semiconductor substrate and the trench is an isolation trench within the silicon semiconductor substrate.
Claim 5
Dependent Claim
31 words
The method of claim 1 wherein the width of the trench is greater than about 0.3 microns and the depth of the trench is from about 3000 to about 5000 angstroms.
Claim 6
Dependent Claim
43 words
The method of claim 1 wherein: the thermal silicon oxide trench liner layer is formed to a thickness of from about 200 to about 400 angstroms; and the conformal silicon oxide intermediate layer is formed to a thickness greater that about 1200 angstroms.
Claim 7
Dependent Claim
42 words
The method of claim 1 wherein the ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employs a reactor chamber pressure of from about 400 to about 600 torr and an ozone:TEOS volume ratio of from about 10:1 to about 15:1.
Claim 8
Dependent Claim
37 words
The method of claim 1 further comprising treating the thermal silicon oxide trench liner layer with a nitrogen containing plasma prior to forming upon the thermal silicon oxide trench liner layer the conformal silicon oxide intermediate layer.
Claim 9
Dependent Claim
103 words
The method of claim 7 wherein the nitrogen plasma is employed at: a reactor chamber pressure of from about 1.0 to about 2.0 torr; a first radio frequency power of from about 50 to about 150 watts at a first radio frequency of 13.56 MHZ and a simultaneous second radio frequency power of from about 400 to about 500 watts at a simultaneous second radio frequency of 350 kHz; a nitrogen flow rate of from about 400 to about 600 standard cubic centimeters per minute (sccm); and a helium flow rate of from about 1500 to about 2500 standard cubic centimeters per minute.
Claim 10
Dependent Claim
46 words
The method of claim 7 wherein: the thermal silicon oxide trench liner layer is formed to a thickness of from about 200 to about 400 angstroms; and the conformal silicon oxide intermediate layer is formed to a thickness of from about 300 to about 500 angstroms.
Claim 11
Dependent Claim
30 words
The method of claim 1 further comprising planarizing the gap filling silicon oxide trench fill layer to form within the trench a planarized gap filling silicon oxide trench fill layer.
Claim 12
Dependent Claim
29 words
A silicon substrate having formed therein a trench, the trench being filled with a gap filling silicon oxide trench fill layer in accord with the method of claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |