US5756401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the etching of polycide film
Assignee: Fujitsu Semiconductor Ltd
•
Filing: 1993-03-08
•
Granted: 1998-05-26
•
Expires: 2013-03-08
Abstract
Abstract There is provided a process of dry etching of a double-layer film composed of a polycrystal silicon film and a metal silicide film formed on a base substance with an etching-proof film composed of an inorganic compound as a mask in a state that reaction gas loaded with at least any one of HBr gas, Br2 gas and BBr3 gas is activated by plasma discharge, and the temperature of the base substance is maintained at 60 DEG C. or higher. With this, it is possible to aim at improvement of dimensional controllability and selectivity of etching without using flon gas, and further to arrange so that the configuration after etching of an object to be etched does not depend on an area ratio on a wafer of the area of a region where an etching-proof film is formed to the exposed area of the object to be etched.
Inventors
- 👤 Katsuhiko Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:18
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/71
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
136 words
A process for dry etching a double-layer film formed on a substrate having a top layer selected from the group consisting of silicon oxide film and silicon nitride film, said double-layer film comprising a polycrystalline silicon film formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for dry etching comprising the steps of: selectively covering the double-layer film with an inorganic etching mask; activating by plasma discharge a reaction gas consisting of at least one of HBr, Br 2 , and BBr 3 ; and using the activated reaction gas, selectively etching the double-layer film to leave a portion thereof selectively covered with the inorganic etching mask in a state such that the temperature of said substrate is maintained at 60° C. or higher.
Claim 2
Dependent Claim
136 words
A process for dry etching a double-layer film formed on a substrate having a top layer selected from the group consisting of silicon oxide film and silicon nitride film, said double-layer film comprising a polycrystalline silicon film formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for dry etching comprising the steps of: selectively covering the double-layer film with an inorganic etching mask; activating by plasma discharge a reaction gas consisting of at least one of HBr, Br 2 , and BBr 3 ; and using the activated reaction gas, selectively etching the double-layer film to leave a portion thereof selectively covered with the inorganic etching mask in a state such that the temperature of said substrate is maintained at 60° C. or higher.
Claim 3
Dependent Claim
27 words
A process for dry etching according to claim 1, wherein said metal silicide film is selected from the group consisting of tungsten silicide and molybdenum silicide films.
Claim 4
Dependent Claim
42 words
A process for dry etching according to claim 1, wherein said inorganic etching mask is selected from the group consisting of silicon oxide film, silicon nitride film, glass film containing phosphorus, glass film containing boron, and glass film containing phosphorus and boron.
Claim 5
Dependent Claim
140 words
A process for dry etching a double-layer film formed on a substrate having a top layer selected from the group consisting of silicon oxide film and silicon nitride film said double-layer film comprising a polycrystalline silicon film formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for dry etching, comprising the steps of: selectively covering the double-layer film with a spin on glass (SOG) film as an etching mask; activating by plasma discharge a reaction gas consisting of at least one of HBr, Br 2 and BBr 3 ; and using the activated reaction gas, selectively etching the double-layer film to leave a portion thereof selectively covered with the etching mask in a state such that a temperature of said substrate is maintained at 60° C. or higher.
Claim 6
Dependent Claim
140 words
A process for dry etching a double-layer film formed on a substrate having a top layer selected from the group consisting of silicon oxide film and silicon nitride film said double-layer film comprising a polycrystalline silicon film formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for dry etching, comprising the steps of: selectively covering the double-layer film with a spin on glass (SOG) film as an etching mask; activating by plasma discharge a reaction gas consisting of at least one of HBr, Br 2 and BBr 3 ; and using the activated reaction gas, selectively etching the double-layer film to leave a portion thereof selectively covered with the etching mask in a state such that a temperature of said substrate is maintained at 60° C. or higher.
Claim 7
Dependent Claim
27 words
A process for dry etching according to claim 4, wherein said metal silicide film is selected from the group consisting of tungsten silicide and molybdenum silicide films.
Claim 8
Dependent Claim
160 words
A process for dry etching a double-layer film formed on a substrate having a top layer consisting of one of silicon oxide film and silicon nitride file, said double-layer film comprising a polycrystalline silicon film, formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for dry etching, comprising the steps of: selectively covering the double-layer film with an inorganic etching mask; activating by plasma discharge a reaction gas mixture consisting of a first gas and a second gas, said first gas consisting of at least one of HBr, Br 2 and BBr 3 and said second gas consisting of at least one of oxygen atom containing compounds; and using the activated reaction gas mixture, selectively etching the double-layer film to leave a portion thereof selectively covered with the inorganic etching mask in a state such that a temperature of said substrate is maintained at 60° C. or higher.
Claim 9
Dependent Claim
160 words
A process for dry etching a double-layer film formed on a substrate having a top layer consisting of one of silicon oxide film and silicon nitride file, said double-layer film comprising a polycrystalline silicon film, formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for dry etching, comprising the steps of: selectively covering the double-layer film with an inorganic etching mask; activating by plasma discharge a reaction gas mixture consisting of a first gas and a second gas, said first gas consisting of at least one of HBr, Br 2 and BBr 3 and said second gas consisting of at least one of oxygen atom containing compounds; and using the activated reaction gas mixture, selectively etching the double-layer film to leave a portion thereof selectively covered with the inorganic etching mask in a state such that a temperature of said substrate is maintained at 60° C. or higher.
Claim 10
Dependent Claim
25 words
A process for dry etching according to claim 6, wherein said metal silicide film is one of tungsten silicide film or a molybdenum silicide film.
Claim 11
Dependent Claim
38 words
A process for dry etching according to claim 6, wherein said inorganic etching mask is one of silicon oxide film, silicon nitride film, glass film containing phosphorus, glass film containing boron, and glass film containing phosphorus and boron.
Claim 12
Dependent Claim
31 words
A process for dry etching according to claim 6, wherein said second gas consists of at least one of O 2 , O 3 , SO 2 and H 2 O.
Claim 13
Dependent Claim
169 words
A process for dry etching a double-layer film formed on a substrate having a top layer consisting of one of silicon oxide film and silicon nitride film, said double-layer film comprising a polycrystalline silicon film formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for, dry etching, comprising the steps of: selectively covering the double-layer film with a spin, on glass (SOG) film as an etching mask; activating by plasma discharge a reaction gas mixture consisting of a first gas and a second gas, said first gas consisting of at least one of HBr, Br 2 and BBr 3 and said gas consisting of at least one of oxygen atom containing compounds; and using the activated reaction gas mixture, selectively etching the double-layer film to leave a portion thereof selectively covered with the etching mask of the spin on glass film in a state such that temperature of said substrate is maintained at 600° C. or higher.
Claim 14
Dependent Claim
169 words
A process for dry etching a double-layer film formed on a substrate having a top layer consisting of one of silicon oxide film and silicon nitride film, said double-layer film comprising a polycrystalline silicon film formed on the top layer of the substrate and a metal silicide film formed on the polycrystalline silicon film, the process for, dry etching, comprising the steps of: selectively covering the double-layer film with a spin, on glass (SOG) film as an etching mask; activating by plasma discharge a reaction gas mixture consisting of a first gas and a second gas, said first gas consisting of at least one of HBr, Br 2 and BBr 3 and said gas consisting of at least one of oxygen atom containing compounds; and using the activated reaction gas mixture, selectively etching the double-layer film to leave a portion thereof selectively covered with the etching mask of the spin on glass film in a state such that temperature of said substrate is maintained at 600° C. or higher.
Claim 15
Dependent Claim
37 words
A process for dry etching according to claim 10, wherein said second gas is is selected from the group consisting of O 2 , O 3 SO 2 and H 2 O or a gas mixture thereof.
Claim 16
Dependent Claim
24 words
A process for dry etching according to claim 10, wherein said metal silicide film is one of tungsten silicide film and molybdenum silicide film.
Claim 17
Dependent Claim
40 words
A process for dry etching according to claim 6, wherein said gas loaded with nitrogen consists of at least one of N 2 , NH 3 , N 2 H 2 , NH 3 OH, NO and N 2 O.
Claim 18
Dependent Claim
27 words
A process for dry etching according to claim 6, wherein said gas loaded with hydrogen consists of at least one of H 2 and H 2 S.
Claim 19
Dependent Claim
25 words
A process for dry etching according to claim 10, wherein said rare gas consists of at least one of He, Ne, Ar, Kr and Xe.
Claim 20
Dependent Claim
39 words
A process for dry etching according to claim 10, wherein said gas loaded with nitrogen consists of at least one of N 2 , NH 3 , N 2 H 21 NH 3 OH, NO and N 2 O.
Claim 21
Dependent Claim
27 words
A process for dry etching according to claim 10, wherein said gas loaded with hydrogen consists of at least one of H 2 and H 2 S.
Claim 22
Dependent Claim
25 words
A process for dry etching according to claim 6, wherein said rare gas consists of at least one of He, Ne, Ar, Kr and Xe.
References Cited (Backward Citations)
US4184909A
Cited
EP0328350A2
Cited
JPH02224241A
Cited
JPH0382120A
Cited
US5013398A
Cited
US5246529A
Cited
US5118387A
Cited
US5160407A
Cited
JPH04298035A
Cited
US5256245A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-25 | 2001-11-24 | 2002-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-25 | 2005-11-24 | 2006-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-25 | 2009-11-24 | 2010-05-26 | $7700.00 | Window Closed / Lapsed |