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US5773325A
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Method of making a variable concentration SiON gate insulating film
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-02-08
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Granted: 1998-06-30
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Expires: 2016-02-08
Abstract
Abstract A gate insulating film covering active layers of a insulated gate field effect semiconductor device utilizing a thin film silicon semiconductor comprises a thin film having the chemical formula SiO x N y . By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the gate electrodes, it is possible to prevent the material composing the gate electrodes from being diffused in the gate insulating film. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the active layers, it is possible to prevent hydrogen ions and other ions from diffusing into the gate insulating film from the active layer.
Inventors
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:58
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10B; H10B20/00; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D86/60; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
90 words
A method of manufacturing an insulated a gate field effect semiconductor device, comprising the step of forming a gate insulating film comprising a material represented as SiO x N y added with chlorine by utilizing chlorosilane or dichlorosilane as a precursor gas, wherein the distribution of N is varied in a thickness direction of the film so that concentration of N in said gate insulating film is greatest in an interface between said gate insulating film and a gate electrode to be formed in contact with said gate insulating film.
Claim 2
Independent Claim
90 words
A method of manufacturing an insulated a gate field effect semiconductor device, comprising the step of forming a gate insulating film comprising a material represented as SiO x N y added with chlorine by utilizing chlorosilane or dichlorosilane as a precursor gas, wherein the distribution of N is varied in a thickness direction of the film so that concentration of N in said gate insulating film is greatest in an interface between said gate insulating film and a gate electrode to be formed in contact with said gate insulating film.
Claim 3
Dependent Claim
42 words
The method of manufacturing a semiconductor device of claim 1 wherein energy band gap of the material represented as SiO x N y is 5.3 to 7.0 eV, dielectric constant is 4 to 6, and x and y satisfy 0<x<2, 0<y<4/3 respectively.
Claim 4
Independent Claim
112 words
A method of manufacturing an insulated gate field effect semiconductor device, comprising the step of forming a gate insulating film comprising a material represented as SiO x N y added with chlorine by utilizing chlorosilane or dichlorosilane as a precursor gas, wherein the distribution of N is varied in a thickness direction of the film so that concentration of N in said gate insulating film is greatest in both an interface between said gate insulating film and an active layer to be formed in contact with said gate insulating film and an interface between said gate insulating film and a gate electrode to be formed in contact with said gate insulating film.
Claim 5
Independent Claim
112 words
A method of manufacturing an insulated gate field effect semiconductor device, comprising the step of forming a gate insulating film comprising a material represented as SiO x N y added with chlorine by utilizing chlorosilane or dichlorosilane as a precursor gas, wherein the distribution of N is varied in a thickness direction of the film so that concentration of N in said gate insulating film is greatest in both an interface between said gate insulating film and an active layer to be formed in contact with said gate insulating film and an interface between said gate insulating film and a gate electrode to be formed in contact with said gate insulating film.
Claim 6
Independent Claim
106 words
A method of manufacturing an insulated gate field effect semiconductor device, comprising the step of forming a gate insulating film comprising a material represented as SiO x N y added with chlorine by utilizing chlorosilane or dichlorosilane as a precursor gas, wherein the distribution of N is varied in a thickness direction of the film so that concentration of N in said gate insulating film has a U-shape when graphed against position from a side of an active layer to be formed in contact with said gate insulating film to a side of a gate electrode to be formed in contact with said gate insulating film.
Claim 7
Independent Claim
106 words
A method of manufacturing an insulated gate field effect semiconductor device, comprising the step of forming a gate insulating film comprising a material represented as SiO x N y added with chlorine by utilizing chlorosilane or dichlorosilane as a precursor gas, wherein the distribution of N is varied in a thickness direction of the film so that concentration of N in said gate insulating film has a U-shape when graphed against position from a side of an active layer to be formed in contact with said gate insulating film to a side of a gate electrode to be formed in contact with said gate insulating film.
Claim 8
Dependent Claim
42 words
The method of claim 4 wherein concentration of N in said gate insulating film is the highest in both an interface between said gate insulating film and said active layer and an interface between said gate insulating film and said gate electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-29 | 2001-12-29 | 2002-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-29 | 2005-12-29 | 2006-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-29 | 2009-12-29 | 2010-06-30 | $7700.00 | Window Closed / Lapsed |